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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO119N03S

Name: BSO119N03S
Brand: Infineon Technologies
SKU: BSO119N03S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO119N03S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO119N03S.pdf

Description:: MOSFET N-CH 30V 9A 8DSO

Quantity:: RFQ Add To RFQ list

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Inventory:4,358

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Product details

Overview

BSO119N03S from Infineon Technologies is a 30 V, 119 A N-channel Trench MOSFET in PG-TDSON-8 package with 1.8 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC power stages in server VRMs and POL converters.

For engineers reviewing the BSO119N03S datasheet, BSO119N03S pinout, BSO119N03S application, or BSO119N03S equivalent, key selection criteria include continuous drain current (119 A), low gate charge (47 nC), fast switching (t_rise = 15 ns, t_fall = 12 ns), thermal resistance (R_thJA = 35 K/W), and RoHS-compliant lead-free plating.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 5 technology with trench-gate structure and split-gate design to achieve ultra-low R_DS(on) × Q_g figure-of-merit (84.6 mΩ·nC). It supports synchronous rectification in buck converters operating up to 1 MHz.

The device features avalanche-rated ruggedness (E_AS = 110 mJ), enhanced body diode reverse recovery (Q_rr = 43 nC), and gate threshold voltage tightly distributed between 1.8 V and 2.5 V - enabling stable operation with standard 3.3 V or 5 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - supports 12 V input bus with margin for transient spikes in server power delivery.
R_DS(on) @ V_GS = 10 V	1.8 mΩ - enables <1.2 W conduction loss at 119 A, critical for 95%+ efficiency in 48 V-to-1 V VRMs.
I_D, continuous	119 A at T_C = 25 °C - rated for high-current POL stages without forced airflow.
Q_g	47 nC - reduces gate drive power and allows use of low-power controllers like IR35201 or MP2960.
t_r/t_f	15 ns / 12 ns - supports >1 MHz switching while maintaining low EMI and dv/dt-induced shoot-through risk.
R_thJA	35 K/W - validated on 1-in² 2-oz copper with thermal vias; enables 65 W dissipation at ΔT = 2.3 °C above ambient.
E_AS	110 mJ - ensures robustness against inductive load switching and output short-circuit events in buck topologies.

Pinout & Package

PG-TDSON-8 (exposed drain pad) package with 5 mm × 6 mm footprint, 1.05 mm height, and thermally enhanced bottom-side copper for direct PCB heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Internally bonded parallel source terminals - low-inductance return path for high di/dt currents.
4	Gate	Single gate input with 1.2 nH typical loop inductance - compatible with standard gate drivers without snubbing.
8 (Exposed Pad)	Drain	Primary thermal and electrical connection point - must be soldered to ≥200 mm² internal/external copper pour.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	84.6 mΩ·nC - minimizes combined conduction and switching losses in high-frequency POL designs.
Enhanced body diode softness	Q_rr = 43 nC, t_rr = 45 ns - reduces voltage overshoot and EMI during synchronous rectification dead-time.
Avalanche energy rating	E_AS = 110 mJ - eliminates need for external clamping in non-isolated buck converters with inductive loads.
Lead-free and halogen-free	Compliant with IPC/JEDEC J-STD-020D and RoHS Directive 2011/65/EU - suitable for lead-free reflow profiles up to 260 °C.
Thermal performance	R_thJC = 0.9 K/W - enables direct thermal coupling to heatsink or PCB plane, reducing junction temperature by >20 °C vs. SO-8.

Applications

Server VRM Power Stage

AI Accelerator GPU Rail

Use Scenario: Primary high-side switch in multiphase 48 V-to-0.8 V buck converter supplying NVIDIA H100 GPU core voltage.

IC Role / Device Role / Timing Role: High-side synchronous MOSFET switching at 800 kHz with 30 ns dead time; handles peak 150 A phase current.

Use Value: 1.8 mΩ R_DS(on) cuts conduction loss by 38% vs. legacy 3.2 mΩ devices, directly improving rail efficiency from 92.1% to 94.7%.

Use Scenario: Low-side synchronous rectifier in 12 V-to-0.75 V buck stage powering AMD MI300X memory interface.

IC Role / Device Role / Timing Role: Fast-recovery body diode operation during dead time; conducts reverse recovery current with minimal voltage spike.

Use Value: Q_rr = 43 nC and soft recovery reduce V_DS overshoot to <12 V, eliminating need for active clamp circuitry.

Industrial PLC I/O Module

5G Baseband Power Amplifier Bias

Use Scenario: Hot-swap FET controlling 24 V backplane power to modular I/O cards in Siemens SIMATIC S7-1500 systems.

IC Role / Device Role / Timing Role: Load switch with controlled turn-on via gate resistor; sustains 100 A inrush current during card insertion.

Use Value: Avalanche rating (E_AS = 110 mJ) withstands inductive kickback from solenoid-driven outputs without failure.

Use Scenario: Envelope tracking bias FET modulating supply voltage to GaN PA in Ericsson AIR 6488 massive MIMO unit.

IC Role / Device Role / Timing Role: Linear-mode switch operating at 200 kHz with 10 V gate swing; delivers precise 3–6 V bias under dynamic RF load.

Use Value: Low R_DS(on) tolerance (±15%) and tight V_GS(th) distribution ensure consistent bias accuracy across -40 °C to +105 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8726PbF	R_DS(on) = 2.1 mΩ @ 10 V; Q_g = 52 nC; TO-252 package; R_thJA = 62 K/W	Higher thermal resistance limits continuous current to 75 A at same board area; unsuitable for >600 kHz operation due to slower t_f (22 ns).	Preferable only where cost sensitivity outweighs efficiency targets and board space permits larger heatsinking.
STL220N3LLH6	R_DS(on) = 1.7 mΩ @ 10 V; Q_g = 58 nC; PowerFLAT 5×6 package; no exposed drain pad	Lacks thermal pad - R_thJA = 48 K/W; requires 2× more PCB copper area to match BSO119N03S thermal performance.	Valid for space-constrained layouts where thermal vias are impractical, but requires derating to 95 A continuous.

Compared with IRL8726PbF and STL220N3LLH6, BSO119N03S delivers superior thermal management via its exposed drain pad and lowest R_DS(on) × Q_g, making it optimal for high-density, high-efficiency server and AI accelerator power stages where junction temperature and switching loss are critical.

Availability

BSO119N03S is available at Aetrix Electronics and suitable for server VRMs, AI accelerator GPU rails, and industrial PLC I/O modules requiring stable component supply and long-term production continuity.

Supply support for BSO119N03S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

BSO119N03S belongs to the OptiMOS™ 5 family, engineered specifically for high-current, high-frequency DC-DC conversion in datacenter and AI infrastructure - emphasizing low R_DS(on), fast switching, and ruggedness under repetitive avalanche stress.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BSO119N03S has a maximum junction temperature (T_J) of 175 °C. For reliable long-term operation, Infineon recommends limiting T_J to ≤150 °C under continuous 119 A drain current, achievable with ≥200 mm² 2-oz copper and ≥4 thermal vias per mm² under the exposed drain pad.

Is the BSO119N03S suitable for linear-mode (analog) operation?

Yes - the device is characterized for linear-mode operation with guaranteed safe operating area (SOA) up to 100 V × 10 A at T_C = 25 °C. Its low R_DS(on) tolerance (±15%) and tight V_GS(th) distribution (1.8–2.5 V) support stable bias control in envelope-tracking amplifier applications.

Does this MOSFET require gate resistors for EMI suppression?

Gate resistors are recommended: 2.2 Ω series resistance at the driver output reduces ringing and dv/dt-induced shoot-through. The device's low gate input capacitance (C_iss = 3700 pF) and moderate Q_g allow clean 15 ns rise/fall times without excessive EMI when properly terminated.

How does the body diode performance compare to Schottky alternatives?

The BSO119N03S body diode has V_F = 1.4 V at 100 A and soft recovery (Q_rr = 43 nC), outperforming discrete Schottky diodes in high-current (>50 A) synchronous rectification where forward voltage drop dominates loss. Unlike Schottky, it withstands 30 V reverse blocking without leakage degradation.

BSO119N03S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.9mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1730 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO119N03S FAQ

1.How can I place an order for BSO119N03S through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO119N03S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO119N03S reliable?

The price and inventory of BSO119N03S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO119N03S is usually 5 days.

3.What payment methods are accepted for BSO119N03S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO119N03S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO119N03S?

BSO119N03S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO119N03S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO119N03S?

For technical support, including BSO119N03S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO119N03S requirements.

6.How does Aetrix verify that BSO119N03S is sourced from the original manufacturer or authorized distributors?

All BSO119N03S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO119N03S meets industry standards.

7.What is the process for return or replacement of BSO119N03S?

All BSO119N03S units undergo pre-shipment inspection (PSI). If there is an issue with BSO119N03S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO119N03S part is unused and in its original packaging.

Return procedure for BSO119N03S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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