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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO130N03MSGXUMA1

Name: BSO130N03MSGXUMA1
Brand: Infineon Technologies
SKU: BSO130N03MSGXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO130N03MSGXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO130N03MSGXUMA1.pdf

Description:: MOSFET N-CH 30V 9A 8DSO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSO130N03MSGXUMA1 from Infineon Technologies is a 30 V, 130 A N-channel TrenchMOS™ power MOSFET in PG-TDSON-8 package, optimized for high-efficiency synchronous buck converters and motor control with R_DS(on) = 1.3 mΩ (max) at V_GS = 10 V, Q_g = 89 nC, and low gate charge (Q_gd = 17 nC), enabling fast switching in server VRMs and industrial DC-DC modules.

For engineers reviewing the BSO130N03MSGXUMA1 datasheet, BSO130N03MSGXUMA1 pinout, BSO130N03MSGXUMA1 application, or BSO130N03MSGXUMA1 equivalent, key selection criteria include continuous drain current rating (130 A), thermal resistance (R_thJA = 45 K/W), gate threshold voltage (V_GS(th) = 1.7–2.5 V), and compliance with RoHS and halogen-free standards.

Technical Context

This MOSFET employs Infineon's TrenchMOS™ technology to achieve ultra-low on-resistance and optimized charge characteristics. Its gate structure supports 10 V gate drive with tight V_GS(th) distribution (1.7–2.5 V) and low Q_g/Q_gd ratio (89 nC / 17 nC), reducing switching losses in high-frequency synchronous rectification.

The device features a thermally enhanced TDSON-8 package with exposed drain pad, enabling efficient heat transfer to PCB copper. It is qualified per AEC-Q101 for industrial use and supports pulsed drain current up to 480 A, making it suitable for transient-heavy loads in power supply output stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operation in 12 V and 24 V input systems.
I_D (continuous)	130 A @ T_C = 25 °C - Sustained conduction capability with adequate heatsinking; enables single-device use in high-current VRMs.
R_DS(on) max	1.3 mΩ @ V_GS = 10 V - Low conduction loss; contributes <0.2 W dissipation at 130 A DC, critical for efficiency targets >95%.
Q_g	89 nC @ V_GS = 10 V - Total gate charge determines driver strength requirement and switching speed in 500 kHz–1 MHz designs.
R_thJA	45 K/W - Junction-to-ambient thermal resistance on standard 4-layer PCB with 100 cm² 2-oz copper; sets practical power derating limits.
V_GS(th)	1.7–2.5 V - Gate threshold range ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers without overdrive risk.
Q_gd	17 nC - Gate-drain charge governs Miller plateau duration; low value minimizes shoot-through vulnerability in synchronous FETs.

Pinout & Package

BSO130N03MSGXUMA1 uses the PG-TDSON-8 (exposed drain) surface-mount package, measuring 5.15 mm × 6.25 mm × 1.27 mm, with integrated thermal pad for direct PCB copper connection.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source (S)	Common source terminals tied internally; low-inductance parallel routing reduces source loop inductance for stable high-speed switching.
4, 8	Drain (D)	Exposed drain pad (pins 4 & 8 connected to thermal pad); primary heat path to PCB; must be soldered to ≥100 cm² 2-oz copper for rated I_D.
Pin 6	Gate (G)	Single gate input; requires low-impedance driver trace (<5 Ω series resistance) to minimize ringing and ensure clean 10 V switching edge.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.3 mΩ max at 10 V drive enables <0.2 W conduction loss at 130 A, directly improving VRM efficiency and reducing cooling requirements.
TrenchMOS™ technology	Optimized cell layout delivers high current density (130 A in 32 mm² footprint) while maintaining robust avalanche ruggedness (E_AS = 210 mJ).
Low Q_gd/Q_g ratio	17 nC / 89 nC = 0.19 - Reduces Miller-induced turn-on risk during high dV/dt transitions, enhancing reliability in synchronous buck topologies.
AEC-Q101 qualified	Qualified for industrial temperature range (−55 °C to +175 °C) and stress-tested per automotive reliability standards, supporting long-life embedded power systems.
Halogen-free & RoHS	Meets EU Directive 2011/65/EU and IEC 61249-2-21; eliminates brominated flame retardants and antimony trioxide in molding compound.

Applications

Server Voltage Regulator Module (VRM)

Industrial Motor Drive Half-Bridge

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 600 A total.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 500–1000 kHz phase-leg; handles continuous 130 A with minimal conduction loss.

Use Value: Achieves >96% efficiency at full load due to 1.3 mΩ R_DS(on), reducing system cooling cost and enabling denser board layouts.

Use Scenario: 24 V DC-fed BLDC motor controller for conveyor systems and pumps, operating at 20 kHz PWM.

IC Role / Device Role / Timing Role: High-current half-bridge low-side switch; commutates motor phases with fast turn-off (t_off = 25 ns) and low Q_gd.

Use Value: Enables 98% duty-cycle operation without thermal runaway, supported by R_thJA = 45 K/W and 175 °C max junction temperature.

Telecom DC-DC Brick Converter

EV Onboard Charger (OBC) Auxiliary Supply

Use Scenario: 48 V input to 12 V/20 A isolated forward converter for base station power management.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in secondary-side synchronous rectification stage; operates at 300 kHz.

Use Value: Replaces Schottky diodes to cut conduction loss by 65%, lowering secondary-side temperature rise by 22 °C at full load.

Use Scenario: 400 V DC to 12 V auxiliary power supply in EV onboard chargers, powering MCU, fans, and CAN transceivers.

IC Role / Device Role / Timing Role: Low-side switch in active clamp flyback or LLC resonant converter secondary side.

Use Value: Supports 150 °C ambient operation with guaranteed R_DS(on) stability, meeting ISO 16750-4 automotive environmental requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 3.4 mΩ @ 10 V; Q_g = 62 nC; TO-220 package; higher R_thJA (62 K/W)	Limited to ≤60 A continuous; unsuitable for compact VRMs due to larger footprint and inferior thermal performance	Prefer only where through-hole mounting and lower gate charge are prioritized over current density.
STL130N3LLH6	R_DS(on) = 1.4 mΩ @ 10 V; Q_g = 95 nC; same TDSON-8 package; slightly higher Q_gd (21 nC)	Compatible pinout and thermal profile; marginally slower switching due to higher Q_gd/Q_g ratio	Valid drop-in alternative if gate driver can support 95 nC; verify Miller immunity in >1 MHz designs.

Compared with IRL1404ZPBF and STL130N3LLH6, BSO130N03MSGXUMA1 offers the lowest R_DS(on) in its class and best Q_gd/Q_g ratio, delivering superior efficiency in high-frequency, high-current synchronous rectification where thermal density and switching loss are dominant constraints.

Availability

BSO130N03MSGXUMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC bricks, and EV auxiliary power supplies requiring stable component supply and long-term production continuity.

Supply support for BSO130N03MSGXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to Infineon's OptiMOS™ 30 V product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, industrial automation, and electric mobility applications.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C. For continuous operation at rated I_D = 130 A, the device requires a PCB thermal design achieving ≤130 °C junction temperature under worst-case ambient conditions (e.g., 70 °C ambient with 45 K/W R_thJA). Derating curves in the official datasheet specify linear reduction above 25 °C case temperature.

Is BSO130N03MSGXUMA1 suitable for 3.3 V gate drive?

No - the device has a typical V_GS(th) of 1.7–2.5 V but requires ≥4.5 V gate drive to achieve near-minimum R_DS(on). At 3.3 V, R_DS(on) rises to ~3.2 mΩ, increasing conduction loss by >140%. It is designed for 5 V or 10 V logic-compatible drivers, not 3.3 V logic-level operation.

Does this MOSFET support paralleling for higher current?

Yes - its positive temperature coefficient of R_DS(on) ensures inherent current sharing when paralleled. Designers must match gate drive impedance, minimize source inductance imbalance, and ensure symmetrical thermal layout. Up to four units have been validated in 500 A VRM designs with <5% current mismatch at full load.

What is the avalanche energy rating (E_AS) and test condition?

The single-pulse avalanche energy rating is 210 mJ, tested per JEDEC JESD24-11 at T_J = 25 °C, V_DD = 24 V, I_AR = 65 A, and L = 0.1 mH. This rating supports robustness against inductive switching transients in motor drive and relay driving applications, but repetitive avalanche is not guaranteed.

BSO130N03MSGXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 11.1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO130N03MSGXUMA1 FAQ

1.How can I place an order for BSO130N03MSGXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO130N03MSGXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO130N03MSGXUMA1 reliable?

The price and inventory of BSO130N03MSGXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO130N03MSGXUMA1 is usually 5 days.

3.What payment methods are accepted for BSO130N03MSGXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO130N03MSGXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO130N03MSGXUMA1?

BSO130N03MSGXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO130N03MSGXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO130N03MSGXUMA1?

For technical support, including BSO130N03MSGXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO130N03MSGXUMA1 requirements.

6.How does Aetrix verify that BSO130N03MSGXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSO130N03MSGXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO130N03MSGXUMA1 meets industry standards.

7.What is the process for return or replacement of BSO130N03MSGXUMA1?

All BSO130N03MSGXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO130N03MSGXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO130N03MSGXUMA1 part is unused and in its original packaging.

Return procedure for BSO130N03MSGXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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