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Infineon Technologies BSO130P03SNTMA1
- Part No.:
- BSO130P03SNTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BSO130P03SNTMA1.pdf
- Description:
- MOSFET P-CH 30V 9.2A 8DSO
- Quantity:
- Payment:
- Shipping:
Inventory:3,784
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Product details
Overview
BSO130P03SNTMA1 from Infineon Technologies is a P-channel enhancement-mode logic-level MOSFET in P-DSO-8 package, rated for -30 V VBR(DSS), 13 mΩ RDS(on) at -10 V VGS, -11.3 A continuous drain current at 25 °C, and 150 °C maximum junction temperature. It is avalanche-rated and dv/dt-rated, optimized for fast-switching buck converters in DC-DC power stages.
For engineers reviewing the BSO130P03SNTMA1 datasheet, BSO130P03SNTMA1 pinout, BSO130P03SNTMA1 application, or BSO130P03SNTMA1 equivalent, key selection criteria include logic-level gate drive compatibility, low RDS(on) at 4.5 V VGS, integrated body diode recovery performance (trr = 26–33 ns), and thermal resistance (RthJA = 80 K/W with 6 cm² copper).
Technical Context
This MOSFET operates in enhancement mode with a gate threshold voltage of -1.0 to -2.2 V, enabling direct interface with 3.3 V and 5 V logic controllers. Its P-channel configuration supports high-side switching in synchronous buck topologies without bootstrap circuitry.
The device integrates an avalanche-rated body diode with Qrr = 16–20 nC and trr = 26–33 ns under defined test conditions (VR = 15 V, IF = -11.3 A, diF/dt = 100 A/µs), supporting reliable freewheeling in hard-switched converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR(DSS) | -30 V - Maximum drain-source blocking voltage before avalanche onset |
| RDS(on) max | 13 mΩ at VGS = -10 V, ID = -11.3 A - Defines conduction loss in high-current power paths |
| ID continuous | -11.3 A at TA = 25 °C - Sustained current capability with minimal footprint PCB cooling |
| trr | 26–33 ns - Body diode reverse recovery time affecting switching loss and EMI in synchronous rectification |
| Qg total | 61–81 nC - Total gate charge determining driver strength and turn-on/turn-off timing |
| RthJA | 80 K/W with 6 cm² copper - Thermal resistance defining junction-to-ambient temperature rise under steady-state operation |
| EAS | 148 mJ - Single-pulse avalanche energy rating confirming ruggedness under inductive load switching stress |
Pinout & Package
Package: P-DSO-8 (8-pin plastic dual small outline, exposed drain pad, RoHS-compliant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Common high-current output node; electrically connected to exposed thermal pad for heat dissipation |
| 8 | Source (S) | Reference terminal for gate drive and current return path in high-side configuration |
| G | Gate (G) | Control input; requires logic-level negative voltage swing (≤ -2.2 V) to fully enhance channel |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = -4.5 V, compatible with standard 3.3 V/5 V microcontrollers and PWM controllers |
| Avalanche-rated | Rated for 148 mJ single-pulse avalanche energy, enabling robust operation in inductive switching circuits without external snubbers |
| dv/dt rated | Withstands 1 kV/µs transient voltage slew rate, reducing risk of false turn-on in noisy high-speed power systems |
| Optimized body diode | Reverse recovery time (26–33 ns) and charge (16–20 nC) support efficient synchronous rectification in buck converters |
Applications
| Motor Control H-Bridge | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-side switch in brushed DC motor H-bridge for robotics and actuation. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled current sourcing during forward/reverse commutation. Use Value: Eliminates need for level-shifting gate drivers due to logic-level VGS(th) and supports 150 °C ambient operation in enclosed enclosures. | Use Scenario: Primary high-side switch in isolated 24 V to 5 V industrial buck converter. IC Role / Device Role / Timing Role: Main power switch handling up to -11.3 A continuous current with fast turn-off (tf = 62–93 ns). Use Value: Low RDS(on) (13 mΩ) reduces conduction loss; avalanche rating ensures reliability during load dump transients. |
| Automotive Body Control Module | Server PSU VRM |
Use Scenario: Load switch for 12 V battery-fed lighting and solenoid control in BCMs. IC Role / Device Role / Timing Role: Logic-compatible high-side switch enabling direct MCU GPIO control without external driver ICs. Use Value: -45 °C to +150 °C operating range and IEC 55/150/56 climatic rating ensure compliance with automotive environmental requirements. | Use Scenario: Synchronous rectifier in multiphase VRM for CPU/GPU core voltage regulation. IC Role / Device Role / Timing Role: Fast-recovery body diode and low Qgd (-21 to -32 nC) minimize shoot-through risk and switching loss. Use Value: trr ≤ 33 ns and Qrr ≤ 20 nC reduce dead-time dependency and improve light-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7413PBF | RDS(on) = 15 mΩ @ -10 V; higher Qg (91 nC); TO-252 package | Larger footprint, lower thermal conductivity than P-DSO-8; less suitable for space-constrained PCBs | Prefer BSO130P03SNTMA1 where board area and thermal performance are critical |
| SI7107DN-T1-GE3 | RDS(on) = 12.5 mΩ @ -4.5 V; SO-8 package; no avalanche rating specified | Lacks documented avalanche ruggedness; unsuitable for inductive load switching without external protection | Choose BSO130P03SNTMA1 when system-level reliability under fault conditions is required |
Compared with IRF7413PBF and SI7107DN-T1-GE3, BSO130P03SNTMA1 delivers superior thermal performance (RthJA = 80 K/W vs. >100 K/W), guaranteed avalanche capability (148 mJ), and tighter RDS(on) tolerance-critical for consistent power loss and thermal management in high-density power supplies.
Availability
BSO130P03SNTMA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and server VRMs requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BSO130P03SNTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The OptiMOS™-P product line delivers P-channel MOSFETs engineered for high-efficiency, high-reliability power conversion in space-constrained and thermally demanding applications-including synchronous buck regulators and high-side load switches.
FAQ
Is BSO130P03SNTMA1 suitable for 3.3 V logic-level gate drive?
Yes. With a gate threshold voltage range of -1.0 V to -2.2 V and full enhancement achievable at VGS = -4.5 V, it interfaces directly with 3.3 V microcontrollers when driven with appropriate negative swing (e.g., using a simple inverting stage or dedicated gate driver). RDS(on) remains below 20 mΩ even at -4.5 V VGS.
What is the maximum allowable continuous drain current at 70 °C ambient?
At TA = 70 °C with minimal PCB footprint, the continuous drain current is -7.4 A. This value is derived from the derating curve on page 2 of the datasheet and assumes no additional heatsinking beyond the specified 6 cm² copper area on FR4.
Does BSO130P03SNTMA1 have an integrated ESD protection diode?
No. The device does not include on-chip ESD protection diodes between gate and source or gate and drain. External gate protection (e.g., TVS diode or series resistor) is recommended in systems exposed to handling or system-level ESD events per IEC 61000-4-2.
Can this MOSFET be used in parallel configurations?
Yes, but with careful layout. Its negative temperature coefficient for RDS(on) (increasing resistance with temperature) supports inherent current sharing. However, matched gate drive routing, symmetrical PCB copper, and individual gate resistors are required to prevent oscillation and uneven current distribution.
BSO130P03SNTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 13mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs:
- 81 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3520 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.56W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
BSO130P03SNTMA1 FAQ
1.How can I place an order for BSO130P03SNTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSO130P03SNTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSO130P03SNTMA1 reliable?
The price and inventory of BSO130P03SNTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO130P03SNTMA1 is usually 5 days.
3.What payment methods are accepted for BSO130P03SNTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO130P03SNTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSO130P03SNTMA1?
BSO130P03SNTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSO130P03SNTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSO130P03SNTMA1?
For technical support, including BSO130P03SNTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO130P03SNTMA1 requirements.
6.How does Aetrix verify that BSO130P03SNTMA1 is sourced from the original manufacturer or authorized distributors?
All BSO130P03SNTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO130P03SNTMA1 meets industry standards.
7.What is the process for return or replacement of BSO130P03SNTMA1?
All BSO130P03SNTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO130P03SNTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSO130P03SNTMA1 part is unused and in its original packaging.
Return procedure for BSO130P03SNTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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