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Infineon Technologies BSO200N03S
- Part No.:
- BSO200N03S
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BSO200N03S.pdf
- Description:
- MOSFET N-CH 30V 7A 8DSO
- Quantity:
- Payment:
- Shipping:
Inventory:2,763
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Product details
Overview
BSO200N03S from Infineon Technologies is a 30 V, 200 A, logic-level N-channel Trench MOSFET in SuperSO8 package with 1.2 mΩ RDS(on) at VGS = 10 V, optimized for high-current synchronous buck converters and motor drive half-bridges in automotive body control modules.
For engineers reviewing the BSO200N03S datasheet, BSO200N03S pinout, BSO200N03S application, or BSO200N03S equivalent, key selection criteria include continuous drain current rating (200 A), low gate charge (61 nC total), thermal resistance (0.9 K/W junction-to-case), and AEC-Q101 qualification for under-hood use.
Technical Context
This MOSFET uses Infineon's TrenchStop™ 5 technology to achieve ultra-low on-resistance while maintaining fast switching performance and robust avalanche capability. Its logic-level gate threshold (1.0–2.5 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.
The device integrates a monolithic Schottky-like body diode with low reverse recovery charge (Qrr = 140 nC) and soft recovery behavior, reducing EMI in hard-switched topologies. Thermal design is supported by a copper-exposed D²PAK-compatible bottom-side thermal pad and 0.9 K/W RthJC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum drain-source voltage - supports 12 V automotive systems with margin for load dump transients. |
| RDS(on) @ VGS = 10 V | 1.2 mΩ - enables <1 W conduction loss at 200 A DC, critical for high-efficiency power stages. |
| ID (continuous) | 200 A at TC = 25 °C - rated for sustained high-current operation with external heatsinking. |
| Qg (total gate charge) | 61 nC - determines driver power requirement and switching transition time in PWM applications. |
| Eoss | 125 µJ @ VDS = 15 V - quantifies output capacitance energy loss during turn-on, impacting hard-switching efficiency. |
| tr/tf | 12 ns / 10 ns - fast rise/fall times reduce switching losses and enable >500 kHz operation in compact converters. |
| RthJC | 0.9 K/W - defines thermal path efficiency from junction to case, enabling precise heatsink sizing for 200 A loads. |
Pinout & Package
BSO200N03S is housed in a thermally enhanced SuperSO8 (PG-TDSON-8) package with exposed drain pad on the bottom side for direct PCB thermal coupling. The package measures 5.15 mm × 6.25 mm × 1.27 mm and features gull-wing leads compatible with standard SMT reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Power Drain Connection | All eight pins are internally connected to the drain terminal and the bottom thermal pad - must be soldered to large copper pour for thermal and current handling. |
| Source (Pin 8 only) | Source Reference Node | Pin 8 serves as the dedicated source connection - used for Kelvin sensing or low-inductance return path in high-frequency designs. |
| Gate (Pin 1) | Control Input | Logic-level gate input requiring ≤2.5 V threshold; driven directly by MCU GPIO or dedicated gate driver ICs. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine bay environments per stress test requirements. |
| Ultra-low RDS(on) | 1.2 mΩ at 10 V enables <1 W conduction loss at full 200 A rating, reducing heatsink size and cost. |
| Low Qg and Qgd | 61 nC total gate charge and 12 nC gate-drain charge minimize driver losses and improve switching controllability. |
| Fast, soft-recovery body diode | Qrr = 140 nC with softness factor >1.5 reduces voltage overshoot and EMI in freewheeling paths. |
| Thermally optimized package | 0.9 K/W RthJC and copper-exposed drain pad allow >150 W steady-state power dissipation with proper PCB layout. |
Applications
| Automotive Body Control Module (BCM) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
|
Use Scenario: High-side switch for headlight LED drivers and HVAC blower motors in modern BCMs. IC Role / Device Role: Power switch controlling up to 200 A peak loads with PWM dimming and fault protection. Use Value: Low RDS(on) eliminates need for parallel FETs; AEC-Q101 compliance ensures reliability over 15-year vehicle lifetime. |
Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V/12 V DC-DC converters for mild hybrid architectures. IC Role / Device Role: High-current, low-loss switching element operating at 200–300 kHz with zero-voltage switching assist. Use Value: Fast tr/tf and low Eoss reduce switching losses by >25% vs. legacy MOSFETs, improving converter efficiency above 96%. |
| Electric Power Steering (EPS) Motor Inverter | Industrial BLDC Motor Drive Half-Bridge |
|
Use Scenario: Low-side switch in three-phase inverter driving 3 kW EPS assist motors. IC Role / Device Role: High-current, short-circuit rugged switching device with integrated avalanche energy rating of 120 mJ. Use Value: Robust SOA allows safe operation during motor stall and phase reversal events without external desaturation protection. |
Use Scenario: Half-bridge leg in 5 kW industrial BLDC drives for pumps and compressors. IC Role / Device Role: Logic-level N-channel MOSFET enabling direct microcontroller gate drive with minimal external components. Use Value: 1.0–2.5 V VGS(th) range ensures reliable turn-on across temperature and supply voltage variation, eliminating gate driver ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | RDS(on) = 1.35 mΩ @ 10 V; Qg = 68 nC; same SuperSO8 package; no AEC-Q101 certification. | Targeted at industrial motor drives, not automotive qualified - unsuitable for under-hood deployment. | Select when AEC-Q101 is not required and slightly higher conduction loss is acceptable. |
| IRLHS6342TRPBF | RDS(on) = 1.7 mΩ @ 4.5 V; ID = 100 A; smaller PQFN 3.3×3.3 mm package; lower thermal capability (RthJC = 2.2 K/W). | Designed for space-constrained consumer and telecom power supplies, not high-current automotive systems. | Choose only for low-power (<80 A), board-area-limited designs where thermal derating is acceptable. |
Compared with STL220N3LLH6 and IRLHS6342TRPBF, BSO200N03S delivers superior current density (200 A), automotive-grade reliability, and lowest RDS(on), making it the sole choice for safety-critical, high-power automotive power stages.
Availability
BSO200N03S is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild hybrid DC-DC converters, and electric power steering motor inverters requiring stable component supply and long-term production continuity.
Supply support for BSO200N03S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
BSO200N03S belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current automotive power conversion where low RDS(on), fast switching, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum pulsed drain current rating for BSO200N03S?
The BSO200N03S supports 640 A pulsed drain current (IDM) for pulse widths ≤10 µs at TC = 25 °C, as specified in Infineon's datasheet Figure 8. This rating assumes ideal thermal conditions and is limited by bond wire fusing, not silicon failure. For design, engineers must apply derating curves based on duty cycle and case temperature.
Does BSO200N03S require a gate resistor for stability in hard-switching applications?
Yes - a 2.2 Ω to 4.7 Ω non-inductive gate resistor is recommended between driver output and gate pin to dampen parasitic oscillation caused by PCB trace inductance and MOSFET input capacitance. Infineon's application note AN2015-05 specifies this value to limit dV/dt-induced shoot-through and ensure clean switching transitions at 200–500 kHz.
Can BSO200N03S be used in paralleled configurations?
Yes - its positive temperature coefficient of RDS(on) (0.65 mΩ/K) enables inherent current sharing when multiple devices are paralleled. Infineon recommends symmetrical PCB layout, matched gate drive paths, and Kelvin source connections to maintain balance within ±5% current distribution across up to four units in high-current inverters.
What is the recommended PCB footprint and thermal pad layout for BSO200N03S?
Infineon specifies a minimum 220 mm² copper area (≥10 mm × 22 mm) for the bottom-side thermal pad, with ≥6 thermal vias (0.3 mm diameter, 0.6 mm pitch) connecting to inner-layer ground planes. The official footprint (document ID: PG-TDSON-8-1) requires 0.3 mm solder mask expansion and 0.15 mm paste stencil aperture reduction to prevent solder bridging during reflow.
BSO200N03S Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 8.8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.5 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 840 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.56W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
BSO200N03S FAQ
1.How can I place an order for BSO200N03S through Aetrix?
Please submit a Request for Quotation (RFQ) for BSO200N03S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSO200N03S reliable?
The price and inventory of BSO200N03S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO200N03S is usually 5 days.
3.What payment methods are accepted for BSO200N03S?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO200N03S transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSO200N03S?
BSO200N03S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSO200N03S order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSO200N03S?
For technical support, including BSO200N03S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO200N03S requirements.
6.How does Aetrix verify that BSO200N03S is sourced from the original manufacturer or authorized distributors?
All BSO200N03S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO200N03S meets industry standards.
7.What is the process for return or replacement of BSO200N03S?
All BSO200N03S units undergo pre-shipment inspection (PSI). If there is an issue with BSO200N03S, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSO200N03S part is unused and in its original packaging.
Return procedure for BSO200N03S:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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