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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO200P03SNTMA1

Name: BSO200P03SNTMA1
Brand: Infineon Technologies
SKU: BSO200P03SNTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO200P03SNTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO200P03SNTMA1.pdf

Description:: MOSFET P-CH 30V 7.4A 8DSO

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Product details

Overview

BSO200P03SNTMA1 from Infineon Technologies is a P-channel enhancement-mode logic-level MOSFET in P-DSO-8 package, rated for -30 V V_DS, 20 mΩ R_DS(on) at -10 V V_GS, -9.1 A continuous drain current, and 150 °C junction operation. It is avalanche-rated, dv/dt-rated, and optimized for fast-switching buck converters in industrial power supplies.

For engineers reviewing the BSO200P03SNTMA1 datasheet, BSO200P03SNTMA1 pinout, BSO200P03SNTMA1 application, or BSO200P03SNTMA1 equivalent, key selection criteria include logic-level gate drive compatibility, low R_DS(on) at -10 V, avalanche ruggedness, thermal resistance (R_thJA = 80 K/W with 6 cm² copper), and diode recovery performance (t_rr = 19–24 ns).

Technical Context

This MOSFET operates in enhancement mode with a typical gate threshold voltage of -1.5 V and supports logic-level gate drive down to -2.7 V plateau voltage. Its transconductance (g_fs) reaches 21 S at I_D = -7.3 A, enabling precise current control in synchronous rectification stages.

Dynamic characteristics include C_iss = 2330 pF, C_oss = 625 pF, and Q_g = 54 nC, supporting high-frequency switching up to several hundred kHz. The integrated body diode exhibits V_SD = -1.2 V at -9.1 A and Q_rr = 11 nC, minimizing reverse recovery losses in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - maximum blocking voltage in high-side or synchronous buck low-side configuration
R_DS(on) max	20 mΩ at V_GS = -10 V, I_D = -9.1 A - enables <1.8 W conduction loss at full load
I_D continuous	-9.1 A at T_A = 25 °C - supports ≥70 W output in compact buck regulators
Q_g	54 nC - determines gate driver current requirement (~1.1 A peak for 50 ns turn-on)
t_rr	19–24 ns - limits diode-induced switching loss and EMI in discontinuous conduction mode
R_thJA	80 K/W with 6 cm² copper - allows ~15 °C rise at 1.56 W dissipation in standard PCB layout
E_AS	98 mJ - withstands single-pulse inductive energy without failure in unclamped inductive loads

Pinout & Package

P-DSO-8 surface-mount package with exposed drain pad for thermal enhancement; 8-pin dual-row outline per Infineon standard drawing Rev. 1.21.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally connected to exposed thermal pad - primary current path and heat sink interface
8	Source (S)	Reference node for gate drive and current sensing; tied to ground in low-side switch
G	Gate (G)	Control terminal requiring -10 V for full enhancement; logic-compatible with 3.3 V/5 V microcontrollers via level shift

Key Features

Feature	Design Value
Avalanche-rated operation	98 mJ single-pulse energy handling - eliminates need for external snubbers in flyback or buck-derived topologies
dv/dt ruggedness	Rated for 1 kV/µs - prevents false turn-on during high-slew-rate switching transitions
Logic-level gate drive	V_GS(th) = -1.5 V typ, V_plateau = -2.7 V - compatible with 3.3 V GPIO without external level-shifting circuitry
High-temperature capability	150 °C T_j max - supports operation in sealed enclosures or high-ambient industrial environments
Low Q_gd/Q_g ratio	Q_gd = 14 nC / Q_g = 54 nC ≈ 0.26 - improves Miller immunity and reduces switching instability risk

Applications

Industrial DC-DC Converters

Automotive Body Control Modules

Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in programmable logic controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 300 kHz buck converter with integrated controller.

Use Value: 20 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable -20 V MOSFETs, improving efficiency at 5 A load.

Use Scenario: Power distribution for LED lighting and window lift actuators in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: High-side load switch with integrated reverse polarity protection and current limiting.

Use Value: Avalanche rating (98 mJ) absorbs inductive kickback from motor windings without external clamping diodes.

Server VRM Auxiliary Stages

Smart Home Power Hubs

Use Scenario: Secondary-side 5 V/12 V rail generation in multi-phase server voltage regulator modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase interleaved buck stage operating at 500 kHz.

Use Value: 24 ns t_rr and low Q_rr (11 nC) minimize dead-time losses and improve light-load efficiency.

Use Scenario: USB-C PD power path management and battery backup switching in residential gateway devices.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch controlling AC-DC adapter input to Li-ion charger IC.

Use Value: Logic-level gate enables direct drive from ARM Cortex-M0+ GPIO, reducing BOM count and PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7425PBF	R_DS(on) = 28 mΩ @ -10 V; Q_g = 42 nC; no avalanche rating	Lacks E_AS spec - unsuitable for inductive load switching without snubber	Prefer when cost sensitivity outweighs ruggedness requirements and layout allows tighter thermal management
SI2301DS-T1-BE3	R_DS(on) = 115 mΩ @ -4.5 V; I_D = -2.7 A; SOT-23 package	Lower current rating and higher on-resistance - limited to sub-5 W loads	Select only for space-constrained, low-power applications where P-DSO-8 footprint is unacceptable

Compared with IRF7425PBF and SI2301DS-T1-BE3, BSO200P03SNTMA1 delivers superior power density (9.1 A in P-DSO-8), guaranteed avalanche ruggedness, and lower gate charge-to-conductance ratio - making it optimal for thermally constrained, high-reliability buck converters.

Availability

BSO200P03SNTMA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and server VRM auxiliary stages requiring stable component supply and long-term lifecycle support.

Supply support for BSO200P03SNTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BSO200P03SNTMA1 belongs to the OptiMOS™-P product line, engineered specifically for high-efficiency, high-reliability P-channel switching in compact DC-DC converters and load-switch applications.

FAQ

What is the maximum safe operating temperature for BSO200P03SNTMA1?

The device supports continuous operation up to 150 °C junction temperature, verified per JEDEC JESD22-A108. Derating begins at T_A = 70 °C, where continuous drain current drops to -5.9 A. Thermal design must maintain T_j ≤ 150 °C under worst-case ambient and power dissipation conditions.

Does BSO200P03SNTMA1 require a gate resistor for stability?

Yes - a 10 Ω to 22 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 580 pF) and PCB inductance. This ensures clean turn-on/turn-off waveforms and prevents unintended oscillation during high-di/dt switching.

Can BSO200P03SNTMA1 be used in high-side switch configurations?

Yes - its P-channel architecture and -30 V V_DS rating support high-side switching in 24 V systems. Gate drive must swing below source potential (e.g., using a charge pump or isolated driver) to achieve sufficient V_GS for low R_DS(on).

Is the body diode suitable for synchronous rectification?

No - the integrated body diode has V_SD = -1.2 V and t_rr = 24 ns, making it unsuitable for high-frequency synchronous rectification. It is intended for freewheeling and fault protection only; external Schottky or MOSFET-based synchronous rectifiers are required for efficiency-critical designs.

BSO200P03SNTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 9.1A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO200P03SNTMA1 FAQ

1.How can I place an order for BSO200P03SNTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO200P03SNTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO200P03SNTMA1 reliable?

The price and inventory of BSO200P03SNTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO200P03SNTMA1 is usually 5 days.

3.What payment methods are accepted for BSO200P03SNTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO200P03SNTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO200P03SNTMA1?

BSO200P03SNTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO200P03SNTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO200P03SNTMA1?

For technical support, including BSO200P03SNTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO200P03SNTMA1 requirements.

6.How does Aetrix verify that BSO200P03SNTMA1 is sourced from the original manufacturer or authorized distributors?

All BSO200P03SNTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO200P03SNTMA1 meets industry standards.

7.What is the process for return or replacement of BSO200P03SNTMA1?

All BSO200P03SNTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO200P03SNTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO200P03SNTMA1 part is unused and in its original packaging.

Return procedure for BSO200P03SNTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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