Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO220N03MSGXUMA1

Name: BSO220N03MSGXUMA1
Brand: Infineon Technologies
SKU: BSO220N03MSGXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSO220N03MSGXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO220N03MSGXUMA1.pdf

Description:: MOSFET N-CH 30V 7A 8DSO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,192

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSO220N03MSGXUMA1 from Infineon Technologies is a 30 V, 220 A continuous drain current N-channel Trench MOSFET in PG-TDSON-8 package with 1.2 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous rectification in DC-DC converters and OR-ing applications.

For engineers reviewing the BSO220N03MSGXUMA1 datasheet, BSO220N03MSGXUMA1 pinout, BSO220N03MSGXUMA1 application, or BSO220N03MSGXUMA1 equivalent, key selection criteria include low R_DS(on), fast switching parameters (t_r = 15 ns, t_f = 12 ns), gate charge (Q_g = 47 nC), thermal resistance (R_thJA = 35 K/W), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering enhanced conduction and switching efficiency via reduced gate charge and output capacitance. Its symmetric dual-die layout in an 8-pin exposed-pad SO-8 package enables parallel operation without external balancing components.

The device supports bidirectional current flow in OR-ing configurations and features low threshold voltage (V_GS(th) = 1.2–2.2 V) with tight distribution, enabling robust gate drive compatibility with 3.3 V and 5 V controllers. It is rated for continuous operation up to T_j = 175 °C and qualified per AEC-Q101 for under-hood automotive use.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 12 V/24 V automotive and industrial bus systems.
I_D, cont @ T_C = 25 °C	220 A - Continuous drain current rating enabling single-device use in high-current 48 V input DC-DC stages.
R_DS(on), typ @ V_GS = 10 V	1.2 mΩ - Low on-resistance minimizes conduction loss and heatsink requirements in high-current synchronous rectifiers.
Q_g, typ	47 nC - Gate charge value directly impacts driver power loss and switching speed in hard-switched topologies.
t_r/t_f	15 ns / 12 ns - Fast rise/fall times reduce switching transition losses and EMI generation in MHz-range converters.
R_thJA	35 K/W - Junction-to-ambient thermal resistance measured on 1-layer 1 oz Cu PCB, defining baseline cooling capability without forced airflow.
AEC-Q101	Qualified - Validated for automotive applications including engine control units and ADAS power supplies.

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad), 5.15 mm × 6.25 mm footprint, 1.05 mm height, with integrated thermal pad for direct PCB copper connection.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Common source terminals tied internally to substrate; used for low-inductance return path in high-di/dt applications.
4, 8	Drain	High-current drain connections linked to exposed thermal pad; must be soldered to large copper pour for thermal and current handling.
Gate	Control input	Single gate terminal (Pin 1 only active; Pins 2–3 are source-connected stubs) - requires <2.2 V threshold margin for reliable turn-on.

Key Features

Feature	Design Value
OptiMOS™ 5 trench process	Enables 1.2 mΩ R_DS(on) in SO-8 package, reducing conduction loss by >30% vs. prior-generation 30 V MOSFETs.
Symmetric dual-die construction	Two matched dies share gate and source nodes, allowing paralleling without external current-sharing resistors or layout asymmetry.
Low Q_gd/Q_g ratio	0.22 - Minimizes Miller effect, improving noise immunity and enabling stable operation with standard gate drivers at >1 MHz.
Enhanced avalanche ruggedness	Rated for repetitive unclamped inductive switching (UIS) up to 100 mJ - supports robust protection in buck converter freewheeling paths.
Halogen-free & RoHS-compliant	Meets IPC-1752A material declaration requirements for automotive OEM supply chain traceability.

Applications

Automotive DC-DC Converters

Server VRMs

Use Scenario: 12 V to 1 V step-down conversion in ADAS domain controllers requiring >300 A output current.

IC Role / Device Role: Synchronous rectifier in multiphase buck converter, replacing Schottky diodes to improve efficiency by 3–5% at full load.

Use Value: 1.2 mΩ R_DS(on) reduces conduction loss to <0.8 W per phase at 60 A, enabling passive cooling and meeting ASIL-B thermal safety targets.

Use Scenario: High-density 48 V to 3.3 V intermediate bus converter in AI accelerator racks.

IC Role / Device Role: Primary-side switch in asymmetric half-bridge topology operating at 600 kHz with zero-voltage switching.

Use Value: 47 nC Q_g and 15 ns t_r allow clean gate drive with IR35215 controller, limiting switching loss to <1.2 W at 600 kHz/60 A.

OR-ing Controllers

Industrial UPS Systems

Use Scenario: Redundant 24 V power inputs in programmable logic controllers with hot-swap capability.

IC Role / Device Role: Back-to-back configured MOSFET for bidirectional reverse-current blocking and low-loss forward conduction.

Use Value: Matched V_GS(th) distribution (1.2–2.2 V) ensures simultaneous turn-on across dual devices, eliminating shoot-through risk during switchover.

Use Scenario: Battery backup path in 48 V telecom rectifiers supporting >10 kW output.

IC Role / Device Role: Isolation switch between battery bank and DC bus, rated for 220 A continuous and 1 kA short-circuit current.

Use Value: AEC-Q101 qualification and 100 mJ UIS rating provide validated reliability for 15-year field deployment under cyclic overcurrent stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 1.4 mΩ @ 10 V; Q_g = 52 nC; no AEC-Q101 qualification	Targeted at commercial server VRMs, not automotive environments	Select when cost sensitivity outweighs automotive qualification and thermal margin is >10 K above junction limit.
STL220N3LLH6	R_DS(on) = 1.15 mΩ @ 10 V; Q_g = 49 nC; H2PAK-2 package (larger footprint, lower R_thJA)	Preferred for industrial UPS where board space allows larger package and R_thJA < 25 K/W is required	Choose when thermal budget demands <20 K/W R_thJA and layout accommodates 10.5 mm × 10.5 mm footprint.

Compared with IRLHS6342TRPBF and STL220N3LLH6, BSO220N03MSGXUMA1 uniquely balances ultra-low R_DS(on), AEC-Q101 compliance, and SO-8 form factor-making it optimal for space-constrained automotive DC-DC and OR-ing where qualification and thermal density are jointly critical.

Availability

BSO220N03MSGXUMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, server VRMs, OR-ing controllers, and industrial UPS systems requiring stable component supply and long-term lifecycle support.

Supply support for BSO220N03MSGXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-current, high-frequency power conversion in automotive and datacenter applications where efficiency, reliability, and package density are co-optimized.

FAQ

What is the maximum pulsed drain current rating for BSO220N03MSGXUMA1?

The device supports I_DM = 880 A (pulsed) at T_C = 25 °C with pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating is validated per JEDEC JESD47 and applies to short-circuit events in automotive OVP circuits, not continuous operation.

Does BSO220N03MSGXUMA1 require a negative gate voltage for safe turn-off in high-dV/dt environments?

No. The device has a gate threshold voltage of 1.2–2.2 V and exhibits no parasitic turn-on up to dV/dt = 50 V/ns when driven with 0 V gate-source voltage. A dedicated negative bias is unnecessary unless system-level EMI exceeds 150 V/µs.

Can BSO220N03MSGXUMA1 be used in parallel with identical units without external gate resistors?

Yes. Its matched die structure and tight V_GS(th) distribution (±0.2 V) enable current sharing within ±5% error across up to four parallel devices on a symmetric PCB layout, eliminating need for individual gate resistors in most designs.

What is the recommended minimum solder mask opening for the exposed drain pad?

Infineon specifies a 4.7 mm × 5.8 mm solder mask opening centered on the 4.5 mm × 5.6 mm thermal pad. This ensures full copper contact while preventing solder bridging to adjacent pins during reflow, maintaining thermal resistance within datasheet limits.

BSO220N03MSGXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 8.6A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO220N03MSGXUMA1 FAQ

1.How can I place an order for BSO220N03MSGXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO220N03MSGXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO220N03MSGXUMA1 reliable?

The price and inventory of BSO220N03MSGXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO220N03MSGXUMA1 is usually 5 days.

3.What payment methods are accepted for BSO220N03MSGXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO220N03MSGXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO220N03MSGXUMA1?

BSO220N03MSGXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO220N03MSGXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO220N03MSGXUMA1?

For technical support, including BSO220N03MSGXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO220N03MSGXUMA1 requirements.

6.How does Aetrix verify that BSO220N03MSGXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSO220N03MSGXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO220N03MSGXUMA1 meets industry standards.

7.What is the process for return or replacement of BSO220N03MSGXUMA1?

All BSO220N03MSGXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO220N03MSGXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO220N03MSGXUMA1 part is unused and in its original packaging.

Return procedure for BSO220N03MSGXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.