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Infineon Technologies BSO301SPNTMA1

Part No.:
BSO301SPNTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixBSO301SPNTMA1.pdf
Description:
MOSFET P-CH 30V 12.6A 8DSO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,319

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Product details

Overview

BSO301SPNTMA1 from Infineon Technologies is a P-channel enhancement-mode logic-level MOSFET rated for -30 V drain-source voltage, 8 mΩ RDS(on) at -10 V VGS, and -14.9 A continuous drain current at 25°C. It features avalanche rating, dv/dt ruggedness, and operation up to 150°C junction temperature-designed for high-efficiency synchronous rectification in fast-switching buck converters.

For engineers reviewing the BSO301SPNTMA1 datasheet, BSO301SPNTMA1 pinout, BSO301SPNTMA1 application, or BSO301SPNTMA1 equivalent, key selection criteria include its low gate threshold (–1.5 V typ), 4510 pF input capacitance, –2.4 V gate plateau voltage, integrated body diode with 36 ns reverse recovery time, and SO-8 package thermal resistance of 35 K/W (junction-to-soldering point).

Technical Context

This MOSFET operates in enhancement mode with negative gate control, requiring VGS ≤ –1.5 V to initiate conduction. Its logic-level drive compatibility enables direct interfacing with 3.3 V and 5 V controllers without level-shifting circuitry.

The device integrates an avalanche-rated body diode and supports high dv/dt stress (–6 kV/µs), making it suitable for hard-switched topologies where inductive turn-off transients occur. Thermal design leverages the SO-8 package's low RthJS (35 K/W) for reliable power dissipation up to 2.5 W at 25°C ambient.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating–30 V - Supports input rails up to 24 V DC in buck stages with margin for transient overshoot
RDS(on) @ VGS = –10 V6.3–8 mΩ - Enables <150 mW conduction loss at –12 A, critical for high-current low-voltage outputs
ID Continuous @ 25°C–14.9 A - Sustains full-load current in compact 12 V→3.3 V/5 V point-of-load converters
Qg Total–121 to –181 nC - Determines gate drive power and switching speed in PWM frequencies up to 1 MHz
VGS(th)–1 to –2 V - Ensures robust turn-on with standard logic-level drivers; avoids partial enhancement near 0 V
trr (Body Diode)36–45 ns - Minimizes reverse recovery loss and EMI in synchronous rectification mode
EAS248 mJ - Withstands single-pulse inductive energy without failure during overcurrent events

Pinout & Package

BSO301SPNTMA1 is housed in an SO-8 surface-mount package with exposed drain pads on pins 1–8 (D), source terminals on pins 3, 4, 5, 6, 7 (S), and gate on pin 2 (G). The layout supports high-current drain routing and thermal transfer via PCB copper area.

Pin/TerminalCircuit RoleDesign Meaning
G (Pin 2)GateLogic-level control input; requires –10 V for full enhancement; gate charge Qg = –121–181 nC
S (Pins 3,4,5,6,7)SourceCommon return path for load current; tied to controller ground reference in high-side switch configurations
D (Pins 1,8)DrainHigh-current output node; electrically and thermally connected to large PCB copper pour for heat dissipation

Key Features

FeatureDesign Value
Avalanche-rated operation248 mJ single-pulse energy handling ensures reliability under inductive switching stress without external snubbers
dv/dt ruggednessRated –6 kV/µs - suppresses false turn-on during fast voltage transients in high-frequency converters
Logic-level gate driveVGS(th) = –1.5 V typ - compatible with 3.3 V microcontrollers and PWM ICs without gate driver amplification
High-temperature operation150°C max Tj - maintains RDS(on) stability and safe operating area in sealed or high-ambient environments
Low Qgd/Qg ratioQgd ≈ 33% of Qg - improves Miller immunity and reduces switching losses during hard commutation

Applications

DC-DC Buck ConverterSynchronous Rectifier

Use Scenario: 12 V input to 3.3 V/5 V output in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85%.

Use Value: Achieves <0.15 V forward drop at 12 A, cutting rectifier loss by >60% vs. 40 V/3 A Schottky diode.

Use Scenario: Secondary-side switching in isolated flyback or forward converters for telecom power supplies.

IC Role / Device Role / Timing Role: Active rectification element controlled by transformer-coupled or opto-isolated gate signals.

Use Value: Eliminates diode reverse recovery loss and enables zero-voltage switching (ZVS) assist via precise timing control.

Motor Driver Half-BridgeHot-Swap Controller

Use Scenario: H-bridge leg in 24 V BLDC motor gate driver boards for HVAC actuators.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling bootstrap-free operation with logic-level gate drive.

Use Value: Simplifies gate drive design while maintaining <10 ns propagation delay margin for 20 kHz PWM commutation.

Use Scenario: Inrush current limiting and fault isolation in 48 V server backplane power distribution units.

IC Role / Device Role / Timing Role: Load switch with integrated avalanche energy absorption for hot-plug surge suppression.

Use Value: Absorbs 248 mJ single-event surge without latch-up, enabling Class 3 fault tolerance per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF7413PbFRDS(on) = 12 mΩ @ –4.5 V; Qg = 22 nC lower; no avalanche ratingLimited to non-inductive loads or soft-switched topologies due to missing EAS specPrefer when gate drive strength is constrained and avalanche stress is absent
SI7157DP-T1-GE3RDS(on) = 9.5 mΩ @ –4.5 V; SO-8 package; Tj max = 150°C; no dv/dt rating publishedAcceptable for buck converters below 500 kHz but lacks documented dv/dt immunity for high-dI/dt designsSelect when prioritizing low gate charge over transient ruggedness

Compared with IRF7413PbF and SI7157DP-T1-GE3, BSO301SPNTMA1 uniquely combines avalanche rating, –6 kV/µs dv/dt immunity, and sub-8 mΩ RDS(on) at –10 V-making it optimal for high-reliability, high-frequency synchronous buck stages where both efficiency and ruggedness are mandatory.

Availability

BSO301SPNTMA1 is available at Aetrix Electronics and suitable for DC-DC buck converters, synchronous rectifiers, motor driver half-bridges, and hot-swap controllers requiring stable component supply across industrial, telecom, and embedded power systems.

Supply support for BSO301SPNTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The OptiMOS™-P product line delivers high-performance P-channel MOSFETs optimized for logic-level drive, low RDS(on), and rugged operation in space-constrained, high-efficiency power conversion stages.

FAQ

What is the maximum allowable gate-source voltage for BSO301SPNTMA1?

The absolute maximum VGS is ±20 V. Operation beyond ±12 V is not recommended for long-term reliability. Gate oxide integrity is maintained within this range, and typical gate drive circuits use –10 V for full enhancement and 0 V for turn-off. Exceeding ±20 V risks irreversible gate oxide breakdown.

Does BSO301SPNTMA1 require a gate resistor for stability?

Yes-a series gate resistor (typically 2–10 Ω) is required to dampen ringing caused by gate loop inductance and MOSFET input capacitance. Without it, oscillation during switching can exceed dv/dt limits or cause false turn-on. The datasheet specifies RG = 6 Ω for dynamic parameter measurements, confirming its necessity in real layouts.

Can BSO301SPNTMA1 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Its negative temperature coefficient for RDS(on) promotes current sharing, yet gate drive imbalance or thermal gradient can cause uneven loading. Use individual gate resistors and Kelvin source connections to ensure balanced current distribution across paralleled units.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the integrated body diode is rated for –3.3 A continuous forward current at 25°C and exhibits 36–45 ns reverse recovery time. It supports continuous conduction mode (CCM) operation when paired with appropriate gate timing, though external Schottky diodes may be preferred for ultra-low VSD in high-frequency designs.

BSO301SPNTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
12.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 14.9A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
136 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5890 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-DSO-8

BSO301SPNTMA1 FAQ

1.How can I place an order for BSO301SPNTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO301SPNTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO301SPNTMA1 reliable?

The price and inventory of BSO301SPNTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO301SPNTMA1 is usually 5 days.

3.What payment methods are accepted for BSO301SPNTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO301SPNTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO301SPNTMA1?

BSO301SPNTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO301SPNTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO301SPNTMA1?

For technical support, including BSO301SPNTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO301SPNTMA1 requirements.

6.How does Aetrix verify that BSO301SPNTMA1 is sourced from the original manufacturer or authorized distributors?

All BSO301SPNTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO301SPNTMA1 meets industry standards.

7.What is the process for return or replacement of BSO301SPNTMA1?

All BSO301SPNTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO301SPNTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO301SPNTMA1 part is unused and in its original packaging.

Return procedure for BSO301SPNTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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