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Infineon Technologies BSO303SPNTMA1

Part No.:
BSO303SPNTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixBSO303SPNTMA1.pdf
Description:
MOSFET P-CH 30V 8.9A 8DSO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,204

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Product details

Overview

BSO303SPNTMA1 from Infineon Technologies is a P-channel enhancement-mode logic-level MOSFET rated for -30 V drain-source voltage, 21 mΩ RDS(on) at VGS = -10 V and ID = -8.9 A, and 150 °C operation. It serves as a high-reliability load switch in automotive body control modules, industrial power supplies, and DC-DC converter synchronous rectification stages.

For engineers reviewing the BSO303SPNTMA1 datasheet, BSO303SPNTMA1 pinout, BSO303SPNTMA1 application, or BSO303SPNTMA1 equivalent, key selection criteria include its avalanche-rated capability (97 mJ), dv/dt robustness (-6 kV/µs), low gate charge (Qg = -46 to -69 nC), and SO-8 package thermal performance (RthJA = 53 K/W with 6 cm² copper).

Technical Context

This MOSFET employs a trench-based OptiMOS™-P process optimized for low RDS(on) and fast switching in P-channel configurations. Its gate threshold voltage (VGS(th) = -1 to -2 V) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers, and its integrated body diode supports bidirectional current flow in H-bridge and reverse-polarity protection circuits.

The device features fully specified avalanche energy (EAS = 97 mJ at Tj = 25 °C) and dv/dt immunity (-6 kV/µs), enabling robust operation in inductive switching environments without external snubbers. Thermal resistance from junction to soldering point is fixed at 35 K/W, supporting predictable PCB-level thermal design in compact SMD layouts.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-30 V - Maximum blocking voltage for 12 V automotive and 24 V industrial bus applications
RDS(on) @ VGS = -10 V15–21 mΩ - Enables <1.9 W conduction loss at 8.9 A continuous current
ID (continuous)-8.9 A @ TA = 25 °C - Supports high-side switching in 50 W load control designs
EAS97 mJ - Withstands single-pulse inductive energy without failure in motor drive flyback
Qg-46 to -69 nC - Determines gate driver power requirement and switching speed trade-off
Tj max+150 °C - Allows operation in under-hood automotive environments without derating
dv/dt rating-6 kV/µs - Prevents spurious turn-on during fast voltage transients in noisy systems

Pinout & Package

BSO303SPNTMA1 is housed in an SO-8 surface-mount package (SMD version on FR4 PCB), with drain terminals connected internally to pins 1–4 and 5–8, source on pins 3 and 6, and gate on pin 2. The package supports thermal dissipation via bottom-side copper pad connection.

Pin/TerminalCircuit RoleDesign Meaning
1, 4, 5, 8Drain (D)High-current output node; internally paralleled for low-inductance, low-resistance path
2Gate (G)Logic-level input requiring ≤2 V threshold; negative voltage referenced to source
3, 6Source (S)Reference node for gate drive and current return; tied to system ground in high-side configuration

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced with -4.5 V or -10 V gate-source voltage, compatible with 3.3 V microcontrollers
Avalanche-ratedGuaranteed single-pulse energy handling (97 mJ) eliminates need for external clamping in inductive loads
dv/dt ratedImmune to false triggering up to -6 kV/µs, critical for reliability in brushed motor and relay drive circuits
150 °C junction ratingEnables use in sealed enclosures or engine-bay locations without active cooling

Applications

Automotive Body Control ModuleIndustrial DC-DC Converter

Use Scenario: High-side power distribution for door locks, mirror heaters, and interior lighting.

IC Role / Device Role / Timing Role: P-channel load switch controlling 12 V supply rail with logic-level enable.

Use Value: Low RDS(on) minimizes voltage drop and heat generation at 5–8 A loads; avalanche rating absorbs inductive kickback from solenoids.

Use Scenario: Synchronous rectification in isolated flyback or forward converters.

IC Role / Device Role / Timing Role: Secondary-side P-MOSFET replacing Schottky diode to reduce conduction losses.

Use Value: 21 mΩ RDS(on) cuts rectifier loss by >40% vs. 0.8 V diode at 5 A, improving efficiency by ~1.2% at full load.

Reverse Polarity ProtectionMotor Driver Half-Bridge

Use Scenario: Input protection for 24 V industrial controllers against accidental battery reversal.

IC Role / Device Role / Timing Role: High-side series switch placed before main regulator input.

Use Value: Low gate threshold enables direct control from system supervisor IC; no external level shifter required.

Use Scenario: Upper-leg switch in brushed DC motor H-bridge for robotics and actuation.

IC Role / Device Role / Timing Role: Complementary P-MOSFET paired with N-MOSFET for bidirectional control.

Use Value: Fast turn-off delay (53–80 ns) and low Qgd (-15.8 to -26 nC) minimize shoot-through risk during PWM transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF7420PBFRDS(on) = 28 mΩ @ -10 V; higher Qg (71 nC); TO-252 packageLarger footprint and higher thermal resistance (RthJA ≈ 62 K/W)Choose when board space allows DPAK and lower cost is prioritized over thermal density
SI2301DS-T1-E3RDS(on) = 115 mΩ @ -4.5 V; SOT-23 package; 3.2 A ratingNot suitable for >4 A loads; limited avalanche capability (no EAS spec)Select only for low-power, space-constrained bias rails where 8.9 A capacity is unnecessary

Compared with IRF7420PBF and SI2301DS-T1-E3, BSO303SPNTMA1 delivers superior thermal performance in SO-8, tighter RDS(on) tolerance, and guaranteed avalanche ruggedness-making it optimal for automotive-grade 8 A switching where reliability and compact layout are critical.

Availability

BSO303SPNTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial power conversion, and reverse polarity protection systems requiring stable component supply and long-term lifecycle support.

Supply support for BSO303SPNTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to AEC-Q101 and IATF 16949.

BSO303SPNTMA1 belongs to the OptiMOS™-P small-signal transistor product line, engineered specifically for high-efficiency, high-reliability P-channel switching in 12 V and 24 V automotive and industrial power systems.

FAQ

Is BSO303SPNTMA1 suitable for high-side switching with 3.3 V microcontroller GPIO?

Yes. Its gate threshold voltage range of -1 V to -2 V and logic-level enhancement mode allow full turn-on with -3.3 V gate drive. Verified RDS(on) of 24–31 mΩ at VGS = -4.5 V confirms robust conduction at 3.3 V logic levels, eliminating need for gate driver ICs in most medium-current applications.

What is the maximum safe operating temperature for continuous operation?

The device supports continuous operation up to +150 °C junction temperature. Derating curves show usable current drops to -7.1 A at 70 °C ambient, and thermal resistance RthJA = 53 K/W with 6 cm² copper ensures stable thermal behavior in enclosed industrial enclosures without forced airflow.

Does BSO303SPNTMA1 include an integrated body diode, and what are its characteristics?

Yes. It features a monolithic body diode with forward voltage VSD = -0.87 to -1.09 V at |IF| = |ID|, reverse recovery time trr = 25–37 ns, and Qrr = 11.7–17.6 nC. These values support efficient freewheeling in H-bridge and flyback topologies without external diodes.

Can BSO303SPNTMA1 replace N-channel MOSFETs in existing designs?

No-it is a P-channel device and cannot directly substitute for N-channel MOSFETs without circuit reconfiguration. Its high-side switching topology requires gate drive referenced to source, not ground. Replacement would necessitate redesigning gate drive, feedback, and layout to accommodate P-channel polarity and voltage referencing.

BSO303SPNTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
8.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
21mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id:
2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
69 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1754 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.35W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-DSO-8

BSO303SPNTMA1 FAQ

1.How can I place an order for BSO303SPNTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO303SPNTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO303SPNTMA1 reliable?

The price and inventory of BSO303SPNTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO303SPNTMA1 is usually 5 days.

3.What payment methods are accepted for BSO303SPNTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO303SPNTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO303SPNTMA1?

BSO303SPNTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO303SPNTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO303SPNTMA1?

For technical support, including BSO303SPNTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO303SPNTMA1 requirements.

6.How does Aetrix verify that BSO303SPNTMA1 is sourced from the original manufacturer or authorized distributors?

All BSO303SPNTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO303SPNTMA1 meets industry standards.

7.What is the process for return or replacement of BSO303SPNTMA1?

All BSO303SPNTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO303SPNTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO303SPNTMA1 part is unused and in its original packaging.

Return procedure for BSO303SPNTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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