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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO4410

Name: BSO4410
Brand: Infineon Technologies
SKU: BSO4410
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO4410

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO4410.pdf

Description:: MOSFET N-CH 30V 11.1A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSO4410 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in SO-8 package, rated for 30 V V_DS, 11.1 A continuous drain current at 25°C, and 13 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and operates up to 150°C - deployed in DC-DC synchronous buck converters and motor gate drivers.

For engineers reviewing the BSO4410 datasheet, BSO4410 pinout, BSO4410 application, or BSO4410 equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (150), fast switching performance (t_r = 33–49 ns), integrated body diode with t_rr = 29–36 ns, and SO-8 thermal resistance of 35 K/W (junction-to-soldering point).

Technical Context

This MOSFET employs trench-based OptiMOS technology optimized for high-efficiency, high-frequency switching in compact power stages. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

Designed for unidirectional power flow control, it supports hard-switched topologies with robust avalanche energy handling (E_AS = 126 mJ at T_j = 25°C) and controlled reverse recovery (Q_rr = 28–35 nC), minimizing voltage overshoot during commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage before avalanche onset; suitable for 24 V rail systems with margin.
R_DS(on) @ V_GS=10 V	13 mΩ max - ensures <1.5 W conduction loss at 11.1 A, critical for thermally constrained PCB layouts.
Q_g	17–21 nC - low total gate charge enables efficient 1–2 MHz switching with minimal driver power dissipation.
E_AS	126 mJ - single-pulse avalanche energy rating allows reliable operation under inductive load turn-off stress.
t_r/t_f	33–49 ns / 23–35 ns - fast edge rates reduce switching transition losses in high-frequency SMPS.
T_j max	150°C - extended junction temperature range supports operation in sealed enclosures or high-ambient environments.
C_iss	1020–1280 pF - input capacitance impacts gate drive loop stability and Miller effect in half-bridge configurations.

Pinout & Package

BSO4410 uses the standard SO-8 surface-mount package (8-pin, 3.9 mm × 4.9 mm footprint), with exposed drain pad for enhanced thermal conduction. Pin 1 is Gate, Pins 2–4 and 6–8 are Source, Pin 5 is Drain (exposed pad connected internally to Pin 5).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts logic-level input (1.2–2.0 V threshold); requires low-impedance drive to minimize switching losses.
Pins 2, 3, 4, 6, 7, 8	Source	Common return path for channel current; multiple pins reduce source inductance and improve high-frequency stability.
Pin 5 + Exposed Pad	Drain	Main power output node; exposed copper pad must be soldered to ≥6 cm² PCB copper area for R_thJS = 35 K/W thermal performance.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3 V/5 V microcontroller interfaces.
Avalanche-rated construction	Guaranteed 126 mJ single-pulse E_AS - enables robustness against inductive kickback in relay/motor drive circuits.
Low Q_g × R_DS(on) FOM	150 - benchmark figure-of-merit indicating superior trade-off between switching speed and conduction loss.
dv/dt ruggedness	6 kV/µs - prevents false turn-on during high dV/dt transients in half-bridge or phase-leg configurations.
Integrated body diode	V_SD = 0.84–1.2 V @ 2 A; t_rr = 29–36 ns - supports synchronous rectification and freewheeling with predictable recovery behavior.

Applications

DC-DC Synchronous Buck Converter

Brushless DC Motor Gate Driver

Use Scenario: High-efficiency 12–24 V input to 3.3/5/12 V output conversion in industrial PLC I/O modules.

IC Role / Device Role: Low-side synchronous rectifier MOSFET, replacing Schottky diodes to reduce conduction loss and heat generation.

Use Value: Achieves >95% efficiency at 10 A load due to 13 mΩ R_DS(on) and fast 33 ns rise time minimizing dead-time losses.

Use Scenario: Half-bridge leg in 24 V BLDC motor controller for HVAC blowers and power tools.

IC Role / Device Role: High-speed switching element controlling phase current direction and magnitude via PWM.

Use Value: Avalanche rating and 6 kV/µs dv/dt immunity prevent failure during motor phase commutation and load dump events.

USB-C Power Delivery Load Switch

Hot-Swap Controller Protection FET

Use Scenario: Inrush current limiting and short-circuit protection in 20 V/5 A USB-PD sink applications.

IC Role / Device Role: Main pass transistor in active load switch circuit, controlled by dedicated PD controller.

Use Value: Logic-level gate enables direct interface with PD controller GPIO; 11.1 A rating supports full 100 W delivery with margin.

Use Scenario: Primary power path FET in telecom line card hot-swap circuits with ±48 V backplane rails.

IC Role / Device Role: Controlled power enable switch that ramps on gradually and shuts off during overcurrent faults.

Use Value: Low R_DS(on) minimizes insertion loss (<0.5 V drop at 8 A), while SO-8 thermal design supports sustained 70°C ambient operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 14.5 mΩ @ 10 V; Q_g = 22 nC; SO-8 package; no specified avalanche rating.	Lacks E_AS specification - unsuitable for inductive switching without external clamping.	Prefer BSO4410 where avalanche robustness is required in motor or relay loads.
DMN3020LSD-13	R_DS(on) = 19 mΩ @ 4.5 V; Q_g = 12.5 nC; dual-N in SO-8; lower V_DS (30 V same), higher R_DS(on).	Dual configuration saves board space but increases per-FET R_DS(on); not a drop-in replacement.	Choose BSO4410 for single-device, lowest-conduction-loss solutions in space-constrained layouts.

Compared with IRF7470PBF and DMN3020LSD-13, BSO4410 delivers superior avalanche ruggedness and lower R_DS(on) at 10 V drive, making it optimal for high-reliability 24 V power stages where transient immunity and thermal margin are critical.

Availability

BSO4410 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, USB-C power delivery systems, and hot-swap controllers requiring stable component supply across production lifecycles.

Supply support for BSO4410 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS product line targets high-efficiency, high-frequency power conversion with trench-MOSFET technology optimized for logic-level drive and low FOM in compact packages like SO-8.

FAQ

What is the maximum safe operating temperature for BSO4410?

The BSO4410 has a specified junction temperature range of –55°C to +150°C. Its absolute maximum T_j is 150°C; sustained operation above this risks permanent degradation. Thermal design must ensure R_thJS ≤ 35 K/W (with 6 cm² copper) to maintain T_j < 150°C at full 11.1 A load in still air.

Can BSO4410 be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage is 1.2–2.0 V, and it achieves full enhancement at V_GS = 4.5 V. A 3.3 V GPIO can turn it on, though R_DS(on) will be ~18.8 mΩ (vs. 13 mΩ at 10 V), increasing conduction loss. For optimal efficiency, use 5 V drive or a simple level shifter.

Does BSO4410 have a specified avalanche energy rating?

Yes - the datasheet specifies E_AS = 126 mJ (single pulse, I_D = 11.1 A, V_DD = 25 V, R_GS = 25 Ω). This rating is validated and guaranteed, confirming suitability for inductive switching applications without external snubbers in many cases.

What is the recommended PCB layout for thermal performance?

Mount BSO4410 on a 40 mm × 40 mm × 1.5 mm FR4 PCB with ≥6 cm² of 70 µm-thick copper connected to Pin 5 and the exposed drain pad. Avoid thermal relief on the drain pad; use multiple vias to inner-layer ground/power planes. Keep gate traces short and low-inductance to prevent oscillation.

BSO4410 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 11.1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 42µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1280 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

BSO4410 FAQ

1.How can I place an order for BSO4410 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO4410 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO4410 reliable?

The price and inventory of BSO4410 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO4410 is usually 5 days.

3.What payment methods are accepted for BSO4410?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO4410 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO4410?

BSO4410 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO4410 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO4410?

For technical support, including BSO4410 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO4410 requirements.

6.How does Aetrix verify that BSO4410 is sourced from the original manufacturer or authorized distributors?

All BSO4410 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO4410 meets industry standards.

7.What is the process for return or replacement of BSO4410?

All BSO4410 units undergo pre-shipment inspection (PSI). If there is an issue with BSO4410, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO4410 part is unused and in its original packaging.

Return procedure for BSO4410:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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