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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO4410T

Name: BSO4410T
Brand: Infineon Technologies
SKU: BSO4410T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO4410T

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO4410T.pdf

Description:: MOSFET N-CH 30V 11.1A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:9,451

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Product details

Overview

BSO4410T from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in SO-8 package, rated for 30 V V_DS, 11.1 A continuous drain current at 25°C, and 13 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and is optimized for fast-switching DC-DC converters and motor control stages.

For engineers reviewing the BSO4410T datasheet, BSO4410T pinout, BSO4410T application, or BSO4410T equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (150), 150°C maximum junction temperature, and robust unclamped inductive switching performance (126 mJ E_AS).

Technical Context

This MOSFET employs trench-based OptiMOS technology to achieve high cell density and low conduction losses. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The device integrates a fast-recovery body diode with t_rr = 29–36 ns and Q_rr = 28–35 nC, supporting synchronous rectification and hard-switched topologies. Thermal resistance from junction to soldering point is 35 K/W, validated on a 6 cm² PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V rail applications with margin
R_DS(on) @ V_GS=10 V	13 mΩ max - Enables <1.5 W conduction loss at 11.1 A
Q_g	17–21 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate drive
E_AS	126 mJ - Withstands single-pulse inductive energy in motor gate drivers
t_r/t_f	33/23 ns typ - Enables clean edge transitions in high-frequency SMPS
T_j max	+150°C - Sustains operation in sealed industrial enclosures without forced cooling

Pinout & Package

BSO4410T uses the standard SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin 1–4 are source terminals (common), pins 5–8 are drain terminals (common), and pin 3 is gate - consistent with industry-standard dual-source/dual-drain layout for low-inductance paralleling.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,4	Source (S)	Four parallel source connections reduce source inductance and improve switching stability
5,6,7,8	Drain (D)	Four parallel drain terminals + exposed pad maximize current handling and thermal dissipation
3	Gate (G)	Single gate input located adjacent to source for minimized gate loop inductance

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - compatible with 3.3 V MCU GPIOs
Avalanche-rated	126 mJ single-pulse E_AS - eliminates need for external snubbers in inductive loads
dv/dt ruggedness	6 kV/µs - prevents false turn-on during high-slew-rate commutation
Low Q_g × R_DS(on)	150 - balances switching loss and conduction loss for high-efficiency 12–24 V systems

Applications

Brushless DC Motor Driver

USB-C Power Delivery Switch

Use Scenario: Half-bridge high-side/low-side switching in 12–24 V BLDC inverters driving fans or pumps.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET with fast turn-off (23 ns fall time) and low R_DS(on) to minimize I²R losses during PWM conduction.

Use Value: 13 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable 20 mΩ devices at 10 A, improving thermal margin.

Use Scenario: Load switch controlling 20 V/3 A USB PD power path in portable docking stations.

IC Role / Device Role / Timing Role: Logic-level power switch enabling direct MCU control without gate driver ICs.

Use Value: 1.6 V typical V_GS(th) ensures reliable turn-on at 3.3 V logic, eliminating risk of partial enhancement.

Industrial PLC Output Stage

Automotive Body Control Module

Use Scenario: Solid-state relay replacement in 24 V DC output modules driving solenoids and valves.

IC Role / Device Role / Timing Role: Avalanche-rated switch absorbing inductive kickback without clamping diodes.

Use Value: 126 mJ E_AS withstands repeated 24 V/1 A inductive transients per IEC 61000-4-4.

Use Scenario: Window lift or seat actuator H-bridge half-bridge in 12 V automotive systems.

IC Role / Device Role / Timing Role: High-current, thermally robust MOSFET operating up to 150°C ambient under hood conditions.

Use Value: 150°C T_j max and 35 K/W R_thJS enable sustained 8.9 A operation at 70°C board temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 12.5 mΩ @ 10 V but higher Q_g (27 nC); SO-8 package	Higher switching loss due to 60% greater Q_g; less suitable for >300 kHz operation	Prefer BSO4410T where gate drive strength is limited or frequency exceeds 400 kHz
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 4.5 V but only 30 V rating; dual-N in SO-8	Superior low-voltage drive but lower avalanche energy (E_AS = 45 mJ)	Choose BSO4410T when unclamped inductive switching reliability is critical

Compared with IRF7470PBF and DMN3025LSD-13, BSO4410T delivers optimal balance of low R_DS(on), moderate Q_g, and high E_AS-making it uniquely suited for industrial motor drives where both efficiency and ruggedness are non-negotiable.

Availability

BSO4410T is available at Aetrix Electronics and suitable for industrial motor control, USB-C power delivery systems, and automotive body electronics requiring stable component supply across multi-year production cycles.

Supply support for BSO4410T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

BSO4410T belongs to the OptiMOS™ logic-level power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12–24 V embedded power systems.

FAQ

Is BSO4410T suitable for 3.3 V microcontroller gate drive?

Yes. With a typical gate threshold voltage of 1.6 V and guaranteed turn-on at V_GS ≥ 4.5 V, BSO4410T achieves full enhancement using standard 3.3 V GPIO outputs. Its R_DS(on) remains ≤18.8 mΩ at V_GS = 4.5 V, ensuring low conduction loss without external level shifters.

What is the maximum continuous drain current at 70°C ambient?

The datasheet specifies 8.9 A continuous drain current at T_A = 70°C with proper PCB layout (6 cm² copper area). This derating reflects thermal limits-not electrical degradation-and assumes no airflow. At 70°C board temperature, junction rise remains within 150°C limit.

Does BSO4410T require a gate resistor for stability?

A gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing caused by PCB trace inductance and gate capacitance interaction. The device's 1.2 Ω typical gate resistance and 1020 pF C_iss make it susceptible to oscillation without controlled gate drive impedance.

Can BSO4410T replace older SO-8 MOSFETs like IRF7319 in existing designs?

BSO4410T is not a direct drop-in for IRF7319 (dual-N) due to different pinout and single-channel configuration. However, as a single-channel logic-level MOSFET, it can replace IRF7470PBF or SI4410DY in half-bridge layouts with verified gate drive and thermal layout adjustments.

BSO4410T Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 11.1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 42µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1280 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

BSO4410T FAQ

1.How can I place an order for BSO4410T through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO4410T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO4410T reliable?

The price and inventory of BSO4410T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO4410T is usually 5 days.

3.What payment methods are accepted for BSO4410T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO4410T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO4410T?

BSO4410T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO4410T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO4410T?

For technical support, including BSO4410T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO4410T requirements.

6.How does Aetrix verify that BSO4410T is sourced from the original manufacturer or authorized distributors?

All BSO4410T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO4410T meets industry standards.

7.What is the process for return or replacement of BSO4410T?

All BSO4410T units undergo pre-shipment inspection (PSI). If there is an issue with BSO4410T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO4410T part is unused and in its original packaging.

Return procedure for BSO4410T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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