Infineon Technologies BSO4420T

Overview

BSO4420T from Infineon Technologies is an N-channel logic-level power MOSFET in SO-8 package, rated for 30 V V_DS, 13 A continuous drain current, and 7.8 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and low gate charge (Q_g = 33.7 nC), making it suitable for high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the BSO4420T datasheet, BSO4420T pinout, BSO4420T application, or BSO4420T equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), thermal resistance (R_thJA = 50 K/W with 6 cm² copper), and robust unclamped inductive switching performance (E_AS = 230 mJ).

Technical Context

This MOSFET employs trench-based OptiMOS technology optimized for fast switching and low conduction loss. Its gate threshold voltage (1.2–2.0 V) ensures reliable turn-on with 3.3 V or 5 V logic controllers, while the 1770 pF input capacitance (C_iss) and 16.5 nC Q_gd support clean, controlled edge rates in hard-switched topologies.

The device integrates a monolithic body diode with 32 ns reverse recovery time (t_rr) and 43.6 nC Q_rr, enabling efficient synchronous rectification and freewheeling in buck and half-bridge configurations without external Schottky supplementation.

Key Specifications

Pinout & Package

BSO4420T uses the standard SO-8 surface-mount package with exposed drain pad (pin 1–4 and 6–8 as source, pin 5 as gate, pins 1–4 and 6–8 internally tied to drain via thermal pad). The package supports 50 K/W junction-to-ambient thermal resistance when mounted on 6 cm² copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRF7470PBF and STL220N3LLH6, BSO4420T offers the best balance of SO-8 compatibility, 7.8 mΩ conduction loss, and 33.7 nC gate charge-making it optimal for space-constrained, high-frequency 24 V systems where thermal and EMI performance must be tightly controlled.

Availability

BSO4420T is available at Aetrix Electronics and suitable for DC-DC converters, motor drive stages, power ORing circuits, and hot-swap controllers requiring stable component supply and qualified automotive-grade reliability.

Supply support for BSO4420T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to AEC-Q101 and IATF 16949 standards.

The OptiMOS™ product line delivers high-performance, logic-level N-channel MOSFETs engineered for high-efficiency switching in 12–48 V power systems including server VRMs, industrial motor drives, and renewable energy inverters.

FAQ

What is the maximum continuous drain current for BSO4420T at 100°C ambient temperature?

At T_A = 100°C with 6 cm² copper cooling area, the maximum continuous drain current is 6.5 A per the derating curve on Page 4 of the datasheet. This reflects thermal limitation-not electrical-since R_DS(on) increases with junction temperature, and P_tot drops to ~0.8 W at that ambient.

Does BSO4420T support gate drive from a 3.3 V microcontroller without a level shifter?

Yes. With V_GS(th) specified from 1.2 V to 2.0 V and guaranteed enhancement at V_GS = 4.5 V (R_DS(on) = 10.9 mΩ max), the device fully turns on using standard 3.3 V GPIO. However, R_DS(on) will be higher than at 10 V, so conduction loss must be recalculated accordingly.

Is the body diode in BSO4420T suitable for synchronous rectification?

Yes. The integrated body diode has t_rr = 32 ns and Q_rr = 43.6 nC, enabling use in synchronous buck topologies up to 1 MHz. Its soft recovery characteristic reduces EMI compared to discrete Schottky alternatives, though external diodes may still be preferred in ultra-low-noise applications.

What is the recommended PCB layout for thermal performance of BSO4420T?

Mount the SO-8 package on a minimum 6 cm² copper area connected directly to the drain pad, using ≥4 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) to inner-layer ground or power planes. Avoid narrow traces between drain pins and thermal pad; maintain solder mask opening over the entire exposed pad for optimal thermal transfer.