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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO4822

Name: BSO4822
Brand: Infineon Technologies
SKU: BSO4822
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO4822

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO4822.pdf

Description:: MOSFET N-CH 30V 12.7A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:2,713

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Product details

Overview

BSO4822 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in SO-8 package, rated for 30 V V_DS, 12.7 A continuous drain current at 25°C, and 10 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and is optimized for fast-switching DC-DC converters and motor control stages.

For engineers reviewing the BSO4822 datasheet, BSO4822 pinout, BSO4822 application, or BSO4822 equivalent, key selection criteria include gate charge (Q_g = 21–26.2 nC), thermal resistance (R_thJA = 50 K/W with 6 cm² copper), reverse diode performance (V_SD = 0.83–1.2 V), and safe operating area under pulsed conditions.

Technical Context

This MOSFET employs trench-based OptiMOS technology to achieve low gate charge × R_DS(on) figure-of-merit (FOM), enabling high-efficiency synchronous rectification and half-bridge switching. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) ensures full enhancement with 3.3 V or 5 V microcontroller drive.

The device integrates a robust body diode with t_rr = 29–36 ns and Q_rr = 25–31 nC, supporting ZVS/ZCS topologies. Thermal design is enabled by validated junction-to-soldering-point resistance (R_thJS ≤ 35 K/W) and transient impedance curves for pulse-width-dependent derating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage before avalanche onset; supports 24 V rail systems with margin
R_DS(on) @ V_GS=10 V	8.5–10 mΩ - Enables <1.3 W conduction loss at 12.7 A, critical for thermally constrained PCB layouts
Q_g	21–26.2 nC - Low total gate charge reduces driver power and switching transition time
t_r/t_f	38–57 ns / 16–24 ns - Fast edge rates support >500 kHz PWM operation without excessive EMI
E_AS	165 mJ - Single-pulse avalanche energy allows reliable operation during inductive load turn-off transients
V_GS(th)	1.2–2.0 V - Ensures turn-on with standard logic-level outputs; avoids partial enhancement in 3.3 V systems
dv/dt rating	6 kV/µs - Withstands rapid voltage transients in hard-switched bridge legs without spurious turn-on

Pinout & Package

BSO4822 is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. The package complies with JEDEC MS-012AC and supports reflow soldering per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (D)	All pins 1–7 and pin 8 are internally connected to drain; large copper area required for thermal path
Pin 8 (exposed pad)	Drain (D)	Primary thermal interface; must be soldered to ≥6 cm² PCB copper for R_thJA = 50 K/W
Pin 1	Gate (G)	High-impedance MOS gate input; requires low-inductance layout to suppress ringing
Pin 2	Source (S)	Reference node for gate drive; connects to power ground plane with minimal loop area

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, compatible with 3.3 V and 5 V MCU GPIOs without level-shifting
Avalanche-rated	Guaranteed single-pulse energy handling (E_AS = 165 mJ) eliminates need for external snubbers in inductive loads
Low Q_g × R_DS(on) FOM	210–262 Ω·nC - Optimized trade-off between switching loss and conduction loss for high-frequency SMPS
150°C T_j rating	Enables operation in sealed enclosures or high-ambient environments without forced air cooling
dv/dt ruggedness	6 kV/µs immunity prevents false turn-on during fast voltage transitions in half-bridge configurations

Applications

DC-DC Synchronous Buck Converter

Brushed DC Motor Driver Stage

Use Scenario: High-efficiency 12 V to 3.3 V point-of-load conversion in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET, switching at 300–600 kHz with precise dead-time control.

Use Value: 8.5 mΩ R_DS(on) and 21 nC Q_g reduce combined conduction + switching losses by >22% vs. legacy SO-8 MOSFETs.

Use Scenario: H-bridge driver for 24 V, 10 A brushed motors in automated gate actuators.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting reverse recovery current during PWM freewheeling.

Use Value: 29 ns t_rr and 25 nC Q_rr minimize diode switching loss and associated heating in 20 kHz PWM operation.

Hot-Swap Controller Protection FET

LED Constant-Current Driver Switch

Use Scenario: Inrush current limiting and fault isolation in 24 V telecom power distribution boards.

IC Role / Device Role / Timing Role: Series pass element controlled by dedicated hot-swap IC, subjected to repeated avalanche stress during short-circuit events.

Use Value: 165 mJ E_AS rating enables >1000 safe fault cycles without degradation, eliminating need for redundant FETs.

Use Scenario: PWM dimming switch in outdoor LED streetlight drivers with 30 V nominal bus.

IC Role / Device Role / Timing Role: Low-side current sink switch modulating 1–5 A LED strings at 1–20 kHz.

Use Value: 6 kV/µs dv/dt rating prevents false triggering during fast LED string voltage transitions across parasitic capacitance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PbF	R_DS(on) = 11.5 mΩ @ 10 V; Q_g = 27 nC; SO-8 package	Slightly higher conduction loss and gate drive demand; lower E_AS (120 mJ)	Acceptable where avalanche stress is infrequent and thermal margin exists
STL100N3LLH6	R_DS(on) = 7.5 mΩ @ 10 V; Q_g = 32 nC; PowerFLAT 5x6 package	Lower R_DS(on) but larger gate charge; different footprint and thermal interface	Preferred for ultra-low conduction loss if board redesign accommodates non-SO-8 layout

Compared with IRF7470PbF and STL100N3LLH6, BSO4822 delivers optimal balance of low Q_g, robust avalanche capability, and SO-8 compatibility-making it ideal for space-constrained, high-reliability 24 V industrial switching where thermal and transient margins are tight.

Availability

BSO4822 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, hot-swap controllers, and LED drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for BSO4822 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS™ product line delivers high-performance, logic-level power MOSFETs engineered for efficiency-critical switching applications in server power supplies, motor drives, and renewable energy inverters.

FAQ

What is the maximum continuous drain current for BSO4822 at 70°C ambient?

The maximum continuous drain current is 10.2 A at T_A = 70°C with proper PCB copper area (6 cm²). This derating reflects thermal limits imposed by R_thJA = 50 K/W under defined cooling conditions-not a device failure limit but a steady-state thermal equilibrium value.

Does BSO4822 require a gate resistor for stability in switching applications?

Yes-a gate resistor (typically 2.2–10 Ω) is recommended to dampen gate-source ringing caused by stray inductance and the device's 1.3 Ω intrinsic gate resistance. Layout optimization alone is insufficient due to measured 7.9 ns turn-on delay and 38 ns rise time under 5.1 Ω test conditions.

Can BSO4822 replace a standard 30 V MOSFET in existing SO-8 footprints?

Yes-BSO4822 uses JEDEC-standard SO-8 outline (MS-012AC) with identical pin pitch and body dimensions. Its logic-level gate and low R_DS(on) allow direct substitution where V_GS drive is ≥4.5 V and thermal design meets 50 K/W R_thJA requirement.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.83–1.2 V at 1.9 A and t_rr = 29–36 ns-comparable to medium-speed Schottkys but with lower leakage (<100 nA). It eliminates external component count and layout area, though discrete Schottkys may offer lower forward drop in high-current, low-voltage applications.

BSO4822 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id:: 2V @ 55µA

Gate Charge (Qg) (Max) @ Vgs:: 26.2 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO4822 FAQ

1.How can I place an order for BSO4822 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO4822 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO4822 reliable?

The price and inventory of BSO4822 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO4822 is usually 5 days.

3.What payment methods are accepted for BSO4822?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO4822 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO4822?

BSO4822 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO4822 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO4822?

For technical support, including BSO4822 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO4822 requirements.

6.How does Aetrix verify that BSO4822 is sourced from the original manufacturer or authorized distributors?

All BSO4822 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO4822 meets industry standards.

7.What is the process for return or replacement of BSO4822?

All BSO4822 units undergo pre-shipment inspection (PSI). If there is an issue with BSO4822, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO4822 part is unused and in its original packaging.

Return procedure for BSO4822:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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