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Infineon Technologies BSO613SPVGHUMA1
- Part No.:
- BSO613SPVGHUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BSO613SPVGHUMA1.pdf
- Description:
- MOSFET P-CH 60V 3.44A 8DSO
- Quantity:
- Payment:
- Shipping:
Inventory:5,870
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Product details
Overview
BSO613SPVGHUMA1 from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ power transistor in PG-SO-8 package, rated for -60 V VDS, 0.13 Ω RDS(on) at -10 V VGS, and -3.44 A continuous drain current. It features avalanche and dv/dt ruggedness, AEC-Q101 qualification, and integrated body diode with -0.87 V forward voltage - deployed in automotive load switching and industrial DC-DC converter high-side control.
For engineers reviewing the BSO613SPVGHUMA1 datasheet, BSO613SPVGHUMA1 pinout, BSO613SPVGHUMA1 application, or BSO613SPVGHUMA1 equivalent, key selection criteria include its -60 V breakdown rating, thermal resistance of 25 K/W (junction-to-soldering point), gate plateau voltage of -3.74 V, 150 mJ single-pulse avalanche energy, and SO-8 footprint compatibility with PCB cooling area design.
Technical Context
This device operates as a logic-level-compatible P-channel MOSFET optimized for high-reliability DC load switching where reverse polarity protection, inductive load handling, and transient robustness are required. Its -2.1 V to -4 V gate threshold enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.
The integrated body diode supports freewheeling in buck converters and reverse-current blocking in battery management systems. Avalanche-rated operation ensures safe clamping during inductive turn-off events, while 6 kV/µs dv/dt immunity prevents spurious turn-on in noisy environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Maximum drain-source blocking voltage; defines maximum system bus voltage it can safely interrupt. |
| RDS(on) | 0.13 Ω max at VGS = -10 V, ID = -3.44 A - Determines conduction loss and junction temperature rise under load. |
| ID (cont) | -3.44 A at TA = 25 °C - Continuous current capability on standard FR4 PCB with 6 cm² copper area. |
| EAS | 150 mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive switch-off transients. |
| dv/dt | 6 kV/µs - Immunity to rapid voltage transients; prevents false triggering in high-noise automotive environments. |
| VGS(th) | -2.1 to -4 V - Gate threshold range; ensures turn-on with standard logic-level drivers and provides noise margin. |
| Qg | 20–30 nC - Total gate charge; determines driver strength requirement and switching speed trade-off. |
Pinout & Package
BSO613SPVGHUMA1 uses the PG-SO-8 (SMD) package with exposed drain pad (Pin 4) for thermal conduction. The package is lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7, 8 | Drain (D) | Internally connected to common drain terminal and exposed thermal pad (Pin 4); carries main load current and dissipates heat. |
| 4 | Drain / Thermal Pad | Soldered to PCB copper pour for thermal path; not electrically isolated - must be tied to drain net. |
| G | Gate (Pin 3) | Control terminal; requires < ±20 V rating; gate charge Qg = 20–30 nC dictates driver sizing. |
| S | Source (Pin 1) | Reference node for gate drive; connects to load return or ground in high-side configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche rated | 150 mJ single-pulse EAS - Enables robust operation without external snubbers in inductive load circuits. |
| dv/dt rated | 6 kV/µs - Eliminates need for gate resistors or RC filters in high-noise automotive power domains. |
| AEC-Q101 qualified | Qualified per stress test standard for automotive electronics - supports use in engine control, body electronics, and ADAS modules. |
| P-channel enhancement mode | VGS(th) = -2.1 to -4 V - Allows direct interface with 3.3 V/5 V MCU GPIOs without level shifters in high-side switch topologies. |
| Low RDS(on) | 0.13 Ω max - Reduces conduction loss to ≤1.5 W at -3.44 A, easing thermal design on compact PCBs. |
Applications
| Automotive Load Switch | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-side power distribution for infotainment head units and lighting modules in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: P-channel MOSFET used as controlled high-side switch with reverse polarity and short-circuit protection. Use Value: AEC-Q101 qualification and 150 mJ avalanche rating ensure reliability during load dump and jump-start events. | Use Scenario: Synchronous rectification and input-side switching in isolated 24 V to 5 V flyback or forward converters. IC Role / Device Role / Timing Role: High-side switch controlling primary-side power delivery; body diode handles freewheeling during dead time. Use Value: Low 0.13 Ω RDS(on) and 6 kV/µs dv/dt rating reduce conduction loss and prevent false turn-on in high-frequency switching. |
| Battery Management System | Reverse Polarity Protection |
Use Scenario: Charge/discharge path control in 24 V LiFePO₄ battery packs for commercial vehicles and energy storage. IC Role / Device Role / Timing Role: Bidirectional current handling via body diode and channel; supports active balancing and fault isolation. Use Value: -3.44 A continuous current and -13.8 A pulsed rating accommodate peak charging currents while maintaining thermal stability. | Use Scenario: Input protection for industrial PLC I/O modules and sensor interfaces powered from unregulated DC rails. IC Role / Device Role / Timing Role: P-channel MOSFET placed between supply and load to block reverse current flow during miswiring. Use Value: -60 V VDS rating and low VSD (-0.87 V typ.) minimize voltage drop and power loss in protection path. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD95R1K2P7ATMA1 | 950 V VDS, 1.2 Ω RDS(on), TO-252 package - higher voltage, lower current, larger footprint. | Designed for AC-DC PFC stages, not automotive DC load switching. | Select only when >60 V blocking and surface-mount DPAK are required; not drop-in compatible. |
| IRF9540NPBF | TO-220 package, -100 V VDS, 0.2 Ω RDS(on), no AEC-Q101 or dv/dt rating. | General-purpose through-hole replacement; lacks automotive qualification and transient immunity. | Acceptable for non-automotive prototypes or cost-sensitive industrial designs without reliability constraints. |
Compared with IPD95R1K2P7ATMA1 and IRF9540NPBF, BSO613SPVGHUMA1 uniquely combines AEC-Q101 compliance, SO-8 thermal performance (25 K/W RthJS), and 6 kV/µs dv/dt rating - making it the only qualified choice for space-constrained, high-noise automotive high-side switches.
Availability
BSO613SPVGHUMA1 is available at Aetrix Electronics and suitable for automotive load switching, industrial DC-DC converters, battery management systems, and reverse polarity protection requiring stable component supply across production lifecycles.
Supply support for BSO613SPVGHUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This part belongs to the SIPMOS™ family of trench-based P-channel MOSFETs engineered for high-reliability, high-ruggedness DC power switching in automotive and industrial environments.
FAQ
Is BSO613SPVGHUMA1 suitable for high-side switching in 24 V automotive systems?
Yes. With -60 V VDS, AEC-Q101 qualification, and 150 mJ avalanche energy, it safely handles 24 V nominal systems including load dump transients up to ISO 7637-2 Pulse 5a (±100 V). Its -3.44 A continuous rating supports typical body control module loads.
What is the recommended gate resistor value for driving BSO613SPVGHUMA1 at 100 kHz?
A 10 Ω series gate resistor is recommended to balance switching speed (typ. tr/tf ≈ 11–18 ns) and EMI suppression. Lower values increase dv/dt stress; higher values slow turn-on and raise switching losses. Layout must minimize gate loop inductance due to 30 nC Qg.
Does the body diode support continuous reverse current in battery backup applications?
Yes. The integrated body diode supports -3.44 A continuous forward current (IS) and -13.8 A pulsed current (ISM). Its -0.87 V to -1.16 V VSD ensures low conduction loss during freewheeling or backup power path conduction.
Can BSO613SPVGHUMA1 be mounted on a 2-layer PCB without thermal vias?
No. The 25 K/W RthJS rating assumes soldering Pin 4 (drain pad) to ≥6 cm² of 70 µm copper on one layer. Without thermal vias or extended copper, junction temperature will exceed 150 °C at full current. Minimum design requires 4+ thermal vias under the pad connected to internal ground/power planes.
BSO613SPVGHUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.44A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 3.44A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 875 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
BSO613SPVGHUMA1 FAQ
1.How can I place an order for BSO613SPVGHUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSO613SPVGHUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSO613SPVGHUMA1 reliable?
The price and inventory of BSO613SPVGHUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO613SPVGHUMA1 is usually 5 days.
3.What payment methods are accepted for BSO613SPVGHUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO613SPVGHUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSO613SPVGHUMA1?
BSO613SPVGHUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSO613SPVGHUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSO613SPVGHUMA1?
For technical support, including BSO613SPVGHUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO613SPVGHUMA1 requirements.
6.How does Aetrix verify that BSO613SPVGHUMA1 is sourced from the original manufacturer or authorized distributors?
All BSO613SPVGHUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO613SPVGHUMA1 meets industry standards.
7.What is the process for return or replacement of BSO613SPVGHUMA1?
All BSO613SPVGHUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO613SPVGHUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSO613SPVGHUMA1 part is unused and in its original packaging.
Return procedure for BSO613SPVGHUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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