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Infineon Technologies BSP123E6327T
- Part No.:
- BSP123E6327T
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP123E6327T.pdf
- Description:
- MOSFET N-CH 100V 370MA SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:4,693
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Product details
Overview
BSP123E6327T from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS® small-signal MOSFET rated for 100 V drain-source voltage, 0.37 A continuous drain current at 25 °C, and 3.5–6 Ω RDS(on) at VGS = 10 V and ID = 0.37 A. It features dv/dt ruggedness up to 6 kV/μs and is AEC-Q101 qualified for automotive use in low-power switching applications such as LED drivers and sensor interface circuits.
For engineers reviewing the BSP123E6327T datasheet, BSP123E6327T pinout, BSP123E6327T application, or BSP123E6327T equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 0.8–1.8 V), thermal resistance (RthJA = 51–115 K/W), reverse diode capability (IS = 0.37 A), and SOT-223 package suitability for surface-mount power management on FR4 PCBs.
Technical Context
This MOSFET operates in enhancement mode with a threshold voltage range of 0.8–1.8 V, enabling direct interfacing with 3.3 V and 5 V logic controllers without level-shifting. Its dv/dt rating of 6 kV/μs ensures robustness against voltage transients in inductive load switching.
The device integrates a monolithic body diode with trr = 52.7–79 ns and Qrr = 17.8–27 nC, supporting moderate-frequency freewheeling in DC-DC converters and motor control H-bridge half-bridges where fast recovery reduces switching losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 100 V - supports operation across 24 V and 48 V industrial bus systems with margin |
| RDS(on) @ VGS=10 V | 3.5–6 Ω - determines conduction loss in low-current (<0.4 A) switching paths |
| ID continuous @ 25°C | 0.37 A - defines maximum steady-state load current without heatsinking |
| VGS(th) | 0.8–1.8 V - enables reliable turn-on with standard microcontroller GPIO outputs |
| dv/dt rating | 6 kV/μs - suppresses false triggering during high-slew-rate voltage transients |
| trr (diode) | 52.7–79 ns - limits reverse recovery energy in 100–500 kHz switching topologies |
| Ptot @ 25°C | 1.79 W - sets thermal derating envelope on standard SOT-223 footprint (6 cm² copper) |
Pinout & Package
Package: PG-SOT223 (4-pin variant with exposed drain pad). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source, Pin 4 = Drain (soldering point). The exposed drain tab provides primary thermal path to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; accepts logic-level input (≤10 V); requires <10 nC total gate charge for full switching |
| Pin 2 | Drain (tab) | Main high-side current path; electrically and thermally connected to exposed metal pad |
| Pin 3 | Source | Reference node for gate drive and current return; ties to ground or low-side switch node |
| Pin 4 | Drain (soldering point) | Secondary thermal connection point; lowers junction-to-soldering-point resistance to 15–25 K/W |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 1.8 V ensures full enhancement with 3.3 V MCU outputs without external driver |
| AEC-Q101 qualification | Validated for automotive temperature range (−55 °C to +150 °C) and reliability stress tests |
| dv/dt ruggedness | 6 kV/μs rating prevents spurious turn-on during inductive load commutation |
| Integrated body diode | Fast recovery (trr < 80 ns) supports synchronous rectification in buck regulators |
| SOT-223 thermal design | RthJA = 51 K/W with 6 cm² copper enables >1 W dissipation without heatsink |
Applications
| LED Driver Circuit | Automotive Sensor Interface |
|---|---|
Use Scenario: Constant-current switching for interior lighting modules in 12 V vehicle systems. IC Role / Device Role / Timing Role: Low-side switch controlling LED string current with PWM dimming at 1–10 kHz. Use Value: Logic-level gate enables direct MCU PWM output drive; RDS(on) < 6 Ω limits I²R loss to <0.8 mW at 370 mA. | Use Scenario: Power gating for analog sensor signal conditioning circuits (e.g., pressure, temperature). IC Role / Device Role / Timing Role: Load switch isolating sensor supply rail during sleep mode to reduce system quiescent current. Use Value: VGS(th) < 1.8 V ensures clean turn-off at 3.3 V logic; leakage IDSS < 5 μA preserves battery life over 10-year service life. |
| Industrial PLC Input Stage | Low-Power DC-DC Converter |
Use Scenario: Optocoupler-driven digital input protection in 24 V programmable logic controllers. IC Role / Device Role / Timing Role: High-voltage interface switch clamping transient surges before downstream logic. Use Value: 100 V VDS rating withstands IEC 61000-4-5 surge test levels; dv/dt immunity prevents latch-up during EFT bursts. | Use Scenario: Synchronous rectifier in 5 V output buck converter for embedded microcontroller power rails. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode to improve efficiency at light loads. Use Value: Body diode trr < 80 ns minimizes reverse recovery loss; RDS(on) < 6 Ω yields >92% efficiency at 300 mA output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-current logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 4.5 Ω @ VGS=4.5 V; SOT-23 package; lower ID (0.25 A) | Not suitable for 0.37 A continuous loads; limited thermal mass | Select only for space-constrained designs with <200 mA average current |
| IPB123N10N3 G | 100 V, 12.3 A, TO-263; RDS(on) = 8.5 mΩ; not logic-level (VGS(th) = 2.0–4.0 V) | Requires gate driver; over-specified for sub-0.5 A use cases | Choose only when higher current headroom and heatsink mounting are available |
Compared with DMN2004LK-7 and IPB123N10N3 G, BSP123E6327T uniquely balances logic-level drivability, 0.37 A current capability, and SOT-223 thermal performance-making it optimal for automotive and industrial low-power switching where gate simplicity and board-level thermal management are prioritized.
Availability
BSP123E6327T is available at Aetrix Electronics and suitable for automotive lighting control, industrial sensor power gating, and PLC input stage protection requiring stable component supply and AEC-Q101 compliance.
Supply support for BSP123E6327T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The BSP123 belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered for robust, logic-compatible switching in automotive and industrial environments where reliability under voltage transients and wide temperature operation are critical.
FAQ
Is BSP123E6327T suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage range of 0.8–1.8 V and guaranteed turn-on at VGS = 2.8 V, the BSP123E6327T fully enhances using standard 3.3 V GPIO outputs. RDS(on) remains ≤14 Ω at VGS = 2.8 V and ID = 15 mA, confirming reliable low-current switching without external level shifting.
What is the maximum operating temperature for continuous use?
The device supports continuous operation from −55 °C to +150 °C junction temperature. At ambient temperatures up to +85 °C, derating curves show usable ID ≥ 0.24 A and Ptot ≥ 0.8 W on standard PCB layouts-enabling deployment in engine bay and industrial control cabinet environments.
Does BSP123E6327T include a body diode, and is it rated for reverse recovery?
Yes. It integrates a monolithic fast-recovery body diode rated for 0.37 A continuous forward current and 1.48 A pulsed current. Reverse recovery time is specified at 52.7–79 ns (VR = 50 V, dIF/dt = 100 A/μs), making it suitable for synchronous rectification in low-frequency DC-DC converters.
How does the SOT-223 package affect thermal performance compared to SOT-23?
The PG-SOT223 package delivers significantly better thermal performance than SOT-23 due to its larger copper area and dedicated drain soldering point (Pin 4). RthJA is 51 K/W with 6 cm² cooling-over 3× lower than typical SOT-23 values-enabling 1.79 W dissipation versus ~0.5 W in SOT-23, critical for sustained 0.37 A operation.
BSP123E6327T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 370mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.8V, 10V
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 370mA, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 70 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.79W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP123E6327T FAQ
1.How can I place an order for BSP123E6327T through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP123E6327T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP123E6327T reliable?
The price and inventory of BSP123E6327T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP123E6327T is usually 5 days.
3.What payment methods are accepted for BSP123E6327T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP123E6327T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSP123E6327T?
BSP123E6327T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP123E6327T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP123E6327T?
For technical support, including BSP123E6327T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP123E6327T requirements.
6.How does Aetrix verify that BSP123E6327T is sourced from the original manufacturer or authorized distributors?
All BSP123E6327T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP123E6327T meets industry standards.
7.What is the process for return or replacement of BSP123E6327T?
All BSP123E6327T units undergo pre-shipment inspection (PSI). If there is an issue with BSP123E6327T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP123E6327T part is unused and in its original packaging.
Return procedure for BSP123E6327T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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