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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSP123L6327HTSA1

Name: BSP123L6327HTSA1
Brand: Infineon Technologies
SKU: BSP123L6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSP123L6327HTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: BSP123L6327HTSA1.pdf

Description:: MOSFET N-CH 100V 370MA SOT223-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSP123L6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS® small-signal MOSFET rated for 100 V drain-source voltage, 0.37 A continuous drain current at 25 °C, and 3.5–6 Ω R_DS(on) at V_GS = 10 V and I_D = 0.37 A. It features dv/dt ruggedness up to 6 kV/μs and is qualified per AEC-Q101 for automotive applications such as LED load switching in instrument clusters.

For engineers reviewing the BSP123L6327HTSA1 datasheet, BSP123L6327HTSA1 pinout, BSP123L6327HTSA1 application, or BSP123L6327HTSA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 0.8–1.8 V), low R_DS(on) at 4.5 V (4.8–10 Ω), integrated body diode with t_rr = 52.7–79 ns, and SOT-223 package thermal resistance (R_thJA = 51–115 K/W).

Technical Context

This MOSFET operates in enhancement mode with a threshold voltage range of 0.8–1.8 V, enabling direct interface with 3.3 V and 5 V logic controllers without level-shifting. Its dv/dt rating of 6 kV/μs ensures robustness against fast transient voltage spikes in inductive load switching.

Designed for surface-mount use on FR4 PCBs with minimum footprint or 6 cm² copper area, it delivers P_tot = 1.79 W at T_A = 25 °C and supports pulsed drain currents up to 1.48 A. The integrated body diode exhibits V_SD = 0.9–1.2 V at I_F = 0.37 A and Q_rr = 17.8–27 nC, suitable for moderate-frequency freewheeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 24 V and 48 V automotive bus systems with margin for load-dump transients
R_DS(on) @ V_GS = 10 V	3.5–6 Ω - enables <100 mW conduction loss at 0.37 A DC, critical for thermally constrained SOT-223 layouts
I_D (continuous)	0.37 A @ T_A = 25 °C - defines maximum steady-state load current without heatsinking
V_GS(th)	0.8–1.8 V - guarantees turn-on with standard 3.3 V GPIO, eliminating external gate drivers
dv/dt rating	6 kV/μs - prevents spurious turn-on during high-slew-rate inductive switching (e.g., solenoid control)
t_rr	52.7–79 ns - limits reverse recovery energy and EMI in 10–100 kHz PWM-driven loads
Q_g	1.6–2.4 nC - determines gate drive power requirement and switching speed with 6 Ω source impedance

Pinout & Package

Package: PG-SOT223 (4-pin variant with exposed drain pad connected to Pin 4). Thermal path optimized for soldering to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives logic-level voltage to modulate channel conductivity; low input capacitance (C_iss = 56–70 pF) minimizes drive burden
Pin 2 (Source)	Reference node	Common return for gate drive and load current; ties to system ground or low-side sensing point
Pin 3 (Drain)	Power output	Connects to load high-side; electrically and thermally tied to Pin 4 for enhanced heat dissipation
Pin 4 (Drain tab)	Thermal & power terminal	Exposed metal pad soldered to PCB copper pour; primary thermal path (R_thJS = 15–25 K/W)

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 1.8 V ensures full enhancement with 3.3 V microcontroller outputs
AEC-Q101 qualification	Validated for automotive temperature cycling, humidity, and mechanical stress per JESD47
dv/dt ruggedness	6 kV/μs rating prevents false triggering in noisy 12 V/24 V vehicle electrical environments
Low gate charge	Q_g ≤ 2.4 nC reduces switching losses and enables >100 kHz operation with minimal driver effort
Integrated body diode	V_SD ≤ 1.2 V and Q_rr ≤ 27 nC support efficient freewheeling in relay/solenoid snubberless designs

Applications

Automotive LED Instrument Cluster Switching

Industrial 24 V Solenoid Driver

Use Scenario: Driving segmented LED backlight arrays in automotive dashboards with PWM dimming at 1–10 kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling current path to LED strings; handles repetitive 0.37 A pulses with minimal self-heating.

Use Value: Logic-level gate enables direct MCU GPIO control; R_DS(on) ≤ 6 Ω limits power loss to <0.8 W at max current, avoiding thermal derating on compact PCBs.

Use Scenario: Energizing 24 V DC solenoids in factory automation valves with 100 ms on-time and 500 ms off-time.

IC Role / Device Role / Timing Role: High-reliability low-side switch managing inductive turn-off transients via integrated diode recovery.

Use Value: 6 kV/μs dv/dt rating suppresses false turn-on during L·di/dt spikes; t_rr < 79 ns minimizes voltage overshoot and snubber component count.

Consumer Appliance Motor Control

Telecom Power Sequencing

Use Scenario: Controlling small brushed DC motors (e.g., cooling fans) in smart home hubs using 3.3 V SoC GPIOs.

IC Role / Device Role / Timing Role: General-purpose logic-compatible switch interfacing between digital controller and motor winding.

Use Value: V_GS(th) as low as 0.8 V guarantees robust turn-on across process/voltage/temperature corners; SOA supports 1.48 A pulse peaks during motor stall.

Use Scenario: Enabling 48 V intermediate bus rails in telecom line cards with controlled ramp-up and fault isolation.

IC Role / Device Role / Timing Role: Hot-swap FET providing inrush current limiting and overcurrent protection via external sense resistor.

Use Value: Low R_DS(on) (≤ 6 Ω) reduces voltage drop during sequencing; AEC-Q101 qualification ensures long-term reliability in 24/7 infrastructure equipment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NF06L	R_DS(on) = 0.22 Ω @ 10 V (higher current), V_GS(th) = 1–2.5 V, TO-220 package	Higher power handling (12 A), unsuitable for space-constrained SOT-223 footprints	Select when >0.37 A continuous current or higher thermal mass is required; not drop-in for PCB layout
DMN2004LK-7	R_DS(on) = 45 mΩ @ 4.5 V, SOT-23 package, I_D = 4.2 A, no AEC-Q101	Higher current density but lower dv/dt rating (not specified); lacks automotive qualification	Prefer for consumer-grade 3.3 V logic switching where AEC-Q101 and dv/dt immunity are non-critical

Compared with STP12NF06L and DMN2004LK-7, BSP123L6327HTSA1 uniquely balances AEC-Q101 compliance, SOT-223 form factor, 6 kV/μs dv/dt immunity, and sub-2 V logic-level turn-on-making it optimal for automotive and industrial low-power switching where board space, reliability, and noise immunity are jointly constrained.

Availability

BSP123L6327HTSA1 is available at Aetrix Electronics and suitable for automotive LED control, industrial solenoid actuation, and telecom power sequencing requiring stable component supply and long-term lifecycle assurance.

Supply support for BSP123L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

The BSP123 belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered for logic-level drivability, high dv/dt immunity, and AEC-Q101 compliance in automotive body electronics and industrial control interfaces.

FAQ

What is the maximum safe operating junction temperature for BSP123L6327HTSA1?

The absolute maximum junction temperature is +150 °C, as defined in the datasheet's "Operating and storage temperature" specification. Continuous operation above this limit risks permanent parametric shift or failure. Derating curves on Page 4 show that at ambient temperatures above 70 °C, the device must be operated below its 0.37 A rated current to maintain T_j ≤ 150 °C, especially with limited PCB copper area.

Does BSP123L6327HTSA1 require a gate resistor for 3.3 V MCU drive?

A gate resistor is recommended even with 3.3 V drive: a 10–47 Ω series resistor controls dV_GS/dt to prevent ringing and EMI, while also limiting peak gate current during switching. The device's Q_g of 1.6–2.4 nC means a 22 Ω resistor yields ~50 ns rise time with typical MCU output impedance, balancing speed and stability without overloading GPIO pins.

Can BSP123L6327HTSA1 replace a bipolar transistor in existing 24 V load circuits?

Yes-it can directly replace low-power NPN transistors (e.g., BC817) in saturated-switch applications, provided the gate is driven with ≥3 V and the load current stays within 0.37 A DC. Advantages include zero base-current requirement, lower V_DS(sat) than V_CE(sat), and faster switching; however, the body diode polarity requires attention in bidirectional or flyback configurations.

Is the SOT-223 package lead-free and RoHS compliant?

Yes-the BSP123L6327HTSA1 uses Pb-free lead plating and is fully RoHS compliant, as explicitly stated in the "Pb-free lead plating; RoHS compliant" line on Page 1 of the datasheet. The "L6327" tape-and-reel designation further confirms packaging compliance with JEDEC standards for moisture sensitivity level (MSL) and reflow profiles.

BSP123L6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 370mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 370mA, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 70 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.79W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-4

BSP123L6327HTSA1 FAQ

1.How can I place an order for BSP123L6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP123L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP123L6327HTSA1 reliable?

The price and inventory of BSP123L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP123L6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSP123L6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP123L6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP123L6327HTSA1?

BSP123L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP123L6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP123L6327HTSA1?

For technical support, including BSP123L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP123L6327HTSA1 requirements.

6.How does Aetrix verify that BSP123L6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSP123L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP123L6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSP123L6327HTSA1?

All BSP123L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP123L6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP123L6327HTSA1 part is unused and in its original packaging.

Return procedure for BSP123L6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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