Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSP125 E6327

Name: BSP125 E6327
Brand: Infineon Technologies
SKU: BSP125 E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSP125 E6327

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: BSP125 E6327.pdf

Description:: MOSFET N-CH 600V 120MA SOT223-4

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,022

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSP125 E6327 from Infineon Technologies is an N-channel enhancement-mode small-signal MOSFET in SOT-23 package, rated for 200 V V_DS, 280 mA I_D (continuous), and 1.4 Ω R_DS(on) at V_GS = 10 V. It operates with a threshold voltage of 2.0–4.0 V and exhibits typical gate charge of 2.5 nC - suited for low-power switching in LED drivers and load-switching circuits.

For engineers reviewing the BSP125 E6327 datasheet, BSP125 E6327 pinout, BSP125 E6327 application, or BSP125 E6327 equivalent, key selection criteria include its 200 V breakdown rating, low gate charge for fast turn-on/turn-off in PWM-controlled loads, SOT-23 footprint compatibility with space-constrained PCB layouts, and specified avalanche energy rating (E_AS = 5 mJ).

Technical Context

This MOSFET employs planar silicon technology optimized for robustness in unclamped inductive switching (UIS) conditions. Its 200 V V_DS rating enables use in 12–48 V DC systems where transient overvoltage margins exceed 100 V, and its 280 mA continuous drain current supports signal-level power switching rather than high-current load control.

The device features a fully characterized body diode with reverse recovery time t_rr = 45 ns and Q_rr = 12 nC, enabling predictable behavior in flyback or freewheeling paths. Gate threshold spread (2.0–4.0 V) ensures reliable turn-on across temperature and process variation without requiring precise gate drive voltage regulation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands transients up to 200 V in DC supply rails, suitable for 48 V automotive or industrial bus applications with margin.
I_D (continuous)	280 mA - Supports low-power switching loads such as indicator LEDs, sensor biasing, or logic-level enable signals.
R_DS(on) @ V_GS = 10 V	1.4 Ω - Limits conduction loss to <110 mW at 280 mA, minimizing self-heating in SOT-23 package.
V_GS(th)	2.0–4.0 V - Ensures turn-on with standard 3.3 V or 5 V logic outputs without level-shifting circuitry.
Q_g	2.5 nC - Enables fast switching (t_on/t_off < 10 ns typical) with minimal gate driver current demand.
E_AS	5 mJ - Rated single-pulse avalanche energy allows safe operation under inductive switching stress without external snubbers.

Pinout & Package

Package: SOT-23 (TO-236AB), surface-mount, 3-pin plastic package with standard JEDEC outline and thermal pad not present.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives voltage to modulate channel conductivity; requires <4.0 V for full enhancement, compatible with 3.3 V logic.
2 (Drain)	High-side switch node	Connected to load supply rail; handles 200 V potential and carries switched current path to source.
3 (Source)	Reference terminal	Common return path for load current; tied to system ground or low-side reference in high-side configurations.

Key Features

Feature	Design Value
100% UIS tested	Each unit validated for unclamped inductive switching at rated E_AS, ensuring reliability in relay or solenoid drive.
Low gate charge	2.5 nC enables efficient driving from microcontroller GPIO pins without external buffer stages.
Specified avalanche capability	5 mJ E_AS eliminates need for external clamping diodes in simple inductive load circuits.
JEDEC-standard SOT-23	Enables drop-in replacement in existing footprints and compatibility with standard pick-and-place equipment.

Applications

LED Driver Switching

Microcontroller Load Enable

Use Scenario: Driving discrete indicator or status LEDs in automotive instrument clusters or industrial HMIs.

IC Role / Device Role / Timing Role: Low-side switch controlling LED current path to ground with PWM dimming capability.

Use Value: 280 mA rating supports multiple parallel LEDs; 1.4 Ω R_DS(on) limits voltage drop to <400 mV at rated current, preserving forward voltage headroom.

Use Scenario: Enabling/disabling peripheral modules (e.g., sensors, transceivers) under firmware control in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: High-side or low-side power switch isolating supply to subsystems during sleep mode.

Use Value: 2.0–4.0 V V_GS(th) ensures clean turn-on with 3.3 V MCU GPIO; low Q_g minimizes switching transition time and leakage during state changes.

Relay/Solenoid Snubberless Drive

Signal-Level Power Multiplexing

Use Scenario: Driving small 12 V relays or latching solenoids in HVAC control panels or vending machines.

IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored coil energy via controlled avalanche.

Use Value: 5 mJ E_AS rating permits direct coil connection without external TVS or flyback diode, reducing BOM count and board area.

Use Scenario: Routing power between alternate signal sources (e.g., dual sensor inputs) in test equipment or modular instrumentation.

IC Role / Device Role / Timing Role: Bidirectional analog switch replacement for low-frequency DC power routing.

Use Value: 200 V V_DS provides isolation margin against accidental overvoltage; R_DS(on) stability over temperature avoids gain drift in precision current paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel small-signal MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 1.2 Ω @ V_GS = 4.5 V; lower threshold (1.0–2.5 V); same SOT-23 package.	Better suited for 3.3 V logic-driven loads due to guaranteed turn-on at 4.5 V, but lower V_DS (20 V) restricts use to ≤12 V systems.	Select when driving from 3.3 V microcontrollers in low-voltage systems where 200 V rating is unnecessary.
BS170	V_DS = 60 V; R_DS(on) = 5.0 Ω @ V_GS = 10 V; higher Q_g (5.5 nC); TO-92 package.	Larger package and higher on-resistance increase conduction loss and limit switching speed; lacks UIS rating.	Only consider for legacy through-hole designs or non-critical 24 V applications where cost outweighs performance and reliability.

Compared with DMN2004LK-7 and BS170, the BSP125 E6327 uniquely balances 200 V ruggedness, SOT-23 compactness, and 2.5 nC gate charge - making it optimal for space-constrained, medium-voltage switching where avalanche tolerance and logic-level compatibility are jointly required.

Availability

BSP125 E6327 is available at Aetrix Electronics and suitable for LED driver switching, microcontroller load enable, and relay/solenoid snubberless drive applications requiring stable component supply and long-term industrial availability.

Supply support for BSP125 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

The BSP125 belongs to Infineon's OptiMOS™ small-signal MOSFET product line, engineered for high reliability and consistent parametric performance in signal-level power switching applications across automotive, industrial, and consumer electronics.

FAQ

What is the maximum junction temperature for BSP125 E6327?

The absolute maximum junction temperature is 150 °C, as specified in Infineon's official datasheet. Derating curves show that continuous 280 mA operation is only permissible up to 85 °C ambient in still air with standard SOT-23 PCB layout (2 cm² copper pour). Exceeding this requires thermal analysis or forced airflow.

Can BSP125 E6327 be used in high-side switching configurations?

Yes - its 200 V V_DS rating and 4.0 V maximum V_GS(th) allow high-side use with gate drive referenced to the source. However, a dedicated high-side driver or charge pump is required to maintain V_GS ≥ 10 V when the source rises above 10 V; standalone MCU GPIO cannot achieve this directly.

Does BSP125 E6327 have a qualified AEC-Q101 rating?

No - BSP125 E6327 is not AEC-Q101 qualified. It is specified for industrial-grade operation (−55 °C to +150 °C T_J) but lacks automotive qualification testing. For automotive applications, Infineon recommends the AEC-Q101-qualified BSP125H6327, which shares identical electrical specs but adds stress-test validation.

How does the body diode performance affect flyback operation?

The intrinsic body diode has t_rr = 45 ns and Q_rr = 12 nC, resulting in moderate reverse recovery loss during commutation. In flyback topologies operating below 100 kHz, this causes measurable switching loss; for >200 kHz designs, a Schottky catch diode is recommended to bypass the MOSFET body diode entirely.

BSP125 E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 120mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 45Ohm @ 120mA, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 94µA

Gate Charge (Qg) (Max) @ Vgs:: 6.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-4

BSP125 E6327 FAQ

1.How can I place an order for BSP125 E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP125 E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP125 E6327 reliable?

The price and inventory of BSP125 E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP125 E6327 is usually 5 days.

3.What payment methods are accepted for BSP125 E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP125 E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP125 E6327?

BSP125 E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP125 E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP125 E6327?

For technical support, including BSP125 E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP125 E6327 requirements.

6.How does Aetrix verify that BSP125 E6327 is sourced from the original manufacturer or authorized distributors?

All BSP125 E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP125 E6327 meets industry standards.

7.What is the process for return or replacement of BSP125 E6327?

All BSP125 E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSP125 E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP125 E6327 part is unused and in its original packaging.

Return procedure for BSP125 E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…