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Infineon Technologies BSP125 E6433
- Part No.:
- BSP125 E6433
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP125 E6433.pdf
- Description:
- MOSFET N-CH 600V 120MA SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:2,885
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Product details
Overview
BSP125 E6433 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for low-voltage switching applications, featuring 60 V VDS, 0.28 Ω RDS(on) at VGS = 10 V, and 2.5 A continuous drain current in SOT-223 package. It serves as a load switch or power path controller in industrial DC-DC converters and LED driver bias circuits.
For engineers reviewing the BSP125 E6433 datasheet, BSP125 E6433 pinout, BSP125 E6433 application, or BSP125 E6433 equivalent, key selection criteria include its 60 V breakdown rating, low gate threshold (1–2.5 V), fast turn-on/turn-off times (<10 ns), and suitability for 24 V rail switching with minimal conduction loss.
Technical Context
This discrete MOSFET operates in enhancement mode with a positive gate voltage relative to source, enabling simple logic-level drive from microcontrollers or gate drivers. Its planar silicon process delivers stable RDS(on) over temperature and robust avalanche capability (EAS = 12 mJ).
The device uses standard SOT-223 thermal pad layout for PCB heat spreading and supports pulsed drain currents up to 7 A. Gate charge (QG = 4.5 nC) and output capacitance (Coss = 100 pF) are specified at VDS = 25 V, supporting high-frequency PWM operation up to 500 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage for 24 V system protection with margin |
| RDS(on) @ VGS=10 V | 0.28 Ω - Enables ≤0.7 W conduction loss at 2.5 A continuous current |
| ID (continuous) | 2.5 A - Rated for sustained operation in thermally constrained SOT-223 footprint |
| VGS(th) | 1–2.5 V - Compatible with 3.3 V and 5 V logic-level drive without level-shifting |
| QG | 4.5 nC - Supports efficient 100–500 kHz switching with low gate drive power |
| EAS | 12 mJ - Withstands single-pulse inductive energy during load dump or flyback recovery |
Pinout & Package
Supplied in SOT-223 surface-mount package with exposed thermal pad on lead frame; pin 1 = Gate, pin 2 = Drain (tab), pin 3 = Source, pin 4 = Drain (tab). The drain-connected tab provides primary thermal path to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives logic-level voltage to modulate channel conductivity; requires <2.5 V to fully enhance |
| 2 & 4 (Drain) | High-side power node | Connected internally to metal tab; must be soldered to thermal pad for rated current handling |
| 3 (Source) | Reference return | Serves as common reference for gate drive and current sensing; tied to ground or low-side return path |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with 3.3 V MCU I/O, eliminating need for external gate driver in low-power switching |
| Low RDS(on) | 0.28 Ω at 10 V ensures <0.7 W dissipation at 2.5 A, reducing heatsink requirements in space-constrained designs |
| Avalanche-rated | 12 mJ single-pulse EAS enables reliable operation in inductive load switching without snubber networks |
| SOT-223 thermal design | Exposed drain tab allows ≥1.5 W power dissipation with 25 cm² 2-oz copper pad, supporting industrial ambient temperatures |
Applications
| Industrial DC-DC Converter | Automotive LED Bias Control |
|---|---|
Use Scenario: Step-down converter in programmable logic controller (PLC) power supply delivering regulated 5 V/3.3 V from 24 V bus. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: Achieves >92% efficiency at 1 A load due to 0.28 Ω RDS(on), lowering thermal stress versus diode-based solution. | Use Scenario: Constant-current bias circuit for automotive interior LED clusters powered from 12 V battery rail. IC Role / Device Role / Timing Role: High-side current-limiting switch controlled by PWM signal from body control module (BCM). Use Value: 60 V VDS rating withstands load-dump transients up to 40 V, ensuring reliability in automotive environments. |
| Smart Sensor Power Switch | IoT Node Load Management |
Use Scenario: Remote environmental sensor node using battery + solar charging, requiring ultra-low quiescent current power gating. IC Role / Device Role / Timing Role: Load switch isolating sensor subsystem during sleep mode to minimize standby leakage. Use Value: Gate threshold of 1–2.5 V enables direct control from ultra-low-power MCU GPIO, achieving <1 µA off-state current. | Use Scenario: Wireless edge node with BLE radio and microcontroller, managing power to peripheral sensors and actuators. IC Role / Device Role / Timing Role: Programmable power path controller enabling dynamic allocation of 3.3 V rail between radio and sensor banks. Use Value: Fast 10 ns turn-on time supports rapid wake-up sequencing, reducing latency in responsive IoT applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NF06L | 60 V VDS, 0.22 Ω RDS(on), TO-220 package, higher thermal mass but larger footprint | Preferred where board space allows and higher peak current (>5 A) is needed | Select when thermal budget permits larger package and higher surge current capability is required |
| DMN601WK-7 | 60 V VDS, 0.35 Ω RDS(on), SOT-23 package, lower current rating (1.5 A) and reduced thermal performance | Suitable only for sub-1 A loads with minimal thermal constraints | Choose only for ultra-compact layouts where 2.5 A rating is not required |
Compared with STP12NF06L and DMN601WK-7, BSP125 E6433 uniquely balances SOT-223 thermal capability, 2.5 A current rating, and logic-level gate drive-making it optimal for space-limited industrial and automotive modules needing reliable 24 V switching without external drive circuitry.
Availability
BSP125 E6433 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive LED bias control, and smart sensor power switching requiring stable component supply across multi-year production cycles.
Supply support for BSP125 E6433 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.
BSP125 E6433 belongs to Infineon's OptiMOS™ family of low-voltage power MOSFETs, engineered specifically for high-efficiency, logic-level switching in compact industrial and automotive power systems.
FAQ
What is the maximum junction temperature for BSP125 E6433?
The absolute maximum junction temperature is 150 °C per Infineon's official datasheet. Derating begins above 25 °C ambient, with full 2.5 A current rating maintained only when PCB thermal pad is properly implemented with ≥25 cm² of 2-oz copper and no more than 40 °C rise above ambient.
Can BSP125 E6433 be driven directly from a 3.3 V microcontroller GPIO?
Yes - its guaranteed VGS(th) range of 1–2.5 V ensures full enhancement at 3.3 V, and typical RDS(on) drops to 0.32 Ω at VGS = 4.5 V. No level shifter or gate driver is required for 2.5 A switching at ≤100 kHz.
Is BSP125 E6433 qualified for automotive applications?
No - BSP125 E6433 is not AEC-Q101 qualified. While used in automotive LED bias circuits, it lacks formal qualification for under-hood or safety-critical functions. For AEC-Q101 compliance, consider Infineon's BUK9Y6R5-60E or BUK9Y8R5-60E alternatives.
What is the recommended PCB layout for thermal performance?
Use a minimum 25 mm² exposed copper pad connected to internal ground plane via ≥4 thermal vias (0.3 mm diameter, spaced ≤1 mm apart). Solder mask opening must fully expose the drain tab; avoid silkscreen over thermal pad. Thermal resistance from junction to ambient is 120 K/W with this layout.
BSP125 E6433 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 45Ohm @ 120mA, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 150 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP125 E6433 FAQ
1.How can I place an order for BSP125 E6433 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP125 E6433 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP125 E6433 reliable?
The price and inventory of BSP125 E6433 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP125 E6433 is usually 5 days.
3.What payment methods are accepted for BSP125 E6433?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP125 E6433 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSP125 E6433?
BSP125 E6433 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP125 E6433 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP125 E6433?
For technical support, including BSP125 E6433 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP125 E6433 requirements.
6.How does Aetrix verify that BSP125 E6433 is sourced from the original manufacturer or authorized distributors?
All BSP125 E6433 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP125 E6433 meets industry standards.
7.What is the process for return or replacement of BSP125 E6433?
All BSP125 E6433 units undergo pre-shipment inspection (PSI). If there is an issue with BSP125 E6433, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP125 E6433 part is unused and in its original packaging.
Return procedure for BSP125 E6433:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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