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Infineon Technologies BSP129E6327
- Part No.:
- BSP129E6327
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP129E6327.pdf
- Description:
- MOSFET N-CH 240V 350MA SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:3,273
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Product details
Overview
BSP129E6327 from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor in PG-SOT223 package, rated for 240 V VDS, 6 Ω RDS(on) max at VGS = 0 V, and 0.35 A continuous drain current at TA = 25 °C. It features dv/dt ruggedness (6 kV/µs), AEC-Q101 qualification, and VGS(th) band sorting (L-band: −1.35 to −1.15 V) for precision analog switching in automotive sensor interfaces.
For engineers reviewing the BSP129E6327 datasheet, BSP129E6327 pinout, BSP129E6327 application, or BSP129E6327 equivalent, key selection criteria include depletion-mode operation for fail-safe biasing, integrated reverse diode with 53–80 ns trr, thermal resistance RthJS = 25 K/W, and RoHS-compliant Pb-free plating on SOT223 leadframe.
Technical Context
This device operates as a normally-on (depletion-mode) switch requiring negative gate-source voltage to turn off, enabling zero-power hold states in power-gating circuits. Its dv/dt rating of 6 kV/µs ensures robustness against fast transients in inductive load switching, and its VGS(th) banding supports matched threshold control across production reels.
The integrated body diode exhibits VSD = 0.79–1.2 V at IF = 0.35 A and trr = 53–80 ns under specified conditions, making it suitable for freewheeling paths where low recovery charge (Qrr = 65–97 nC) reduces switching losses in quasi-resonant topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 240 V - maximum blocking voltage before avalanche, enabling use in 200 V-class industrial power rails |
| RDS(on) max | 6 Ω at VGS = 0 V, ID = 25 mA - defines on-state conduction loss in depletion-biased constant-current sources |
| ID cont. | 0.35 A at TA = 25 °C - usable continuous current with standard SMT pad layout (6 cm² copper) |
| dv/dt rating | 6 kV/µs - withstands rapid voltage transients without spurious turn-on in motor drive snubbers |
| VGS(th) band | L-band: −1.35 to −1.15 V - enables tighter gate bias design for analog current regulation |
| trr | 53–80 ns - supports high-frequency flyback and synchronous rectification up to ~500 kHz |
| RthJS | 25 K/W - junction-to-solder-point thermal resistance enables direct thermal coupling to PCB ground plane |
Pinout & Package
Package: PG-SOT223 (4-pin variant with exposed drain tab). Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (tab), Pin 4 = Drain (solderable thermal pad).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate terminal | Control input for depletion-mode operation; requires negative VGS to pinch off channel |
| Pin 2 (S) | Source terminal | Reference node for gate drive; tied to system ground in most high-side configurations |
| Pin 3 (D) | Drain connection (tab) | Main current path output; electrically and thermally connected to exposed metal tab |
| Pin 4 (D) | Drain connection (pad) | Secondary solderable drain terminal enhancing thermal transfer to PCB copper area |
Key Features
| Feature | Design Value |
|---|---|
| Depletion-mode operation | Enables fail-safe "always-on" behavior without external bias supply - critical for safety-critical sensor biasing |
| AEC-Q101 qualified | Validated for automotive temperature range (−55 to 150 °C) and mechanical stress per JESD22 standards |
| VGS(th) band sorting (L-band) | Guarantees tight threshold spread (±0.1 V) across reel for consistent analog current setting |
| dv/dt ruggedness | 6 kV/µs rating prevents false triggering during fast edge transitions in EMI-prone environments |
| Integrated body diode | Optimized for low Qrr (65–97 nC) and fast trr (53–80 ns), reducing reverse recovery loss in clamp circuits |
Applications
| Automotive Ambient Light Sensor Biasing | Industrial Current-Source Reference |
|---|---|
Use Scenario: Stable DC bias for photodiode amplifiers in automotive cabin lighting control modules. IC Role / Device Role / Timing Role: Depletion-mode transistor provides fixed current source (IDSS ≈ 50 mA) independent of supply rail fluctuations. Use Value: Eliminates need for active bias circuitry; L-band VGS(th) ensures ±3% current matching across units. | Use Scenario: Precision 100 µA–200 µA reference current generator in 4–20 mA loop transmitters. IC Role / Device Role / Timing Role: Acts as temperature-stable, self-biased current sink with minimal external components. Use Value: RDS(on) drift < 10% over −40 to +125 °C enables stable output without trimming. |
| High-Voltage Snubber Clamp | Fail-Safe Power-Gating Switch |
Use Scenario: dv/dt-rated clamping element in relay coil suppression networks for 24 V truck electronics. IC Role / Device Role / Timing Role: Absorbs inductive kick energy while suppressing voltage overshoot via controlled avalanche. Use Value: 6 kV/µs rating prevents unintended turn-on during 100 V/µs transients common in solenoid drivers. | Use Scenario: Always-on power switch for microcontroller reset supervision in battery-backed systems. IC Role / Device Role / Timing Role: Maintains VCC path during MCU sleep; gate pulled low only during fault detection. Use Value: Zero-power hold state eliminates standby current overhead versus enhancement-mode alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar depletion-mode MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP01N100D | 1000 V VBR(DSS), higher RDS(on) (25 Ω), no VGS(th) banding | Designed for HV transient protection, not precision current sourcing | Choose when higher breakdown voltage outweighs threshold consistency needs |
| BSP160 | Same PG-SOT223 package, but enhancement-mode (VGS(th) = +1.5 V), lower VDS (100 V) | Requires active gate drive; unsuitable for fail-safe biasing | Select only if system already uses positive logic gate control and lower voltage rating is acceptable |
Compared with IXTP01N100D and BSP160, BSP129E6327 uniquely combines AEC-Q101 qualification, VGS(th) banding, and 240 V/6 Ω specs in a single SOT223 footprint-making it the only option for automotive-grade, self-biased current references below 250 V.
Availability
BSP129E6327 is available at Aetrix Electronics and suitable for automotive sensor biasing, industrial current references, high-voltage snubbers, and fail-safe power gating requiring stable component supply across extended temperature ranges.
Supply support for BSP129E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete power devices, with global manufacturing and quality certification to ISO/TS 16949.
The SIPMOS® small-signal transistor product line targets precision analog switching and fail-safe biasing in automotive and industrial systems where depletion-mode behavior, thermal robustness, and AEC-Q101 compliance are mandatory.
FAQ
What is the gate threshold voltage specification for BSP129E6327?
The BSP129E6327 is sorted into VGS(th) bands; the "L" band (indicated by reel marking H6327/L6327) specifies VGS(th) = −1.35 V to −1.15 V at VDS = 3 V and ID = 108 µA. This banding is factory-applied and guaranteed per reel, enabling predictable analog current setting without individual device screening.
Can BSP129E6327 be used in linear (analog) mode?
Yes - its RDS(on) variation vs. temperature is characterized (±10% over −40 to +125 °C), and transfer characteristics (ID vs. VGS) are provided in the datasheet. Linear operation is supported up to Ptot = 1.8 W at TA = 25 °C with adequate PCB copper area (6 cm²), making it suitable for precision current sources and analog switches.
Is the drain tab electrically isolated from Pin 4?
No - Pin 3 (drain tab) and Pin 4 (drain pad) are internally shorted to the same drain potential. Both terminals connect directly to the silicon die's drain region and must be soldered to the same net on the PCB. This dual-drain configuration improves thermal dissipation and current handling capability.
Does BSP129E6327 have avalanche capability?
Yes - the device is rated for repetitive avalanche energy (EAS) per the Safe Operating Area (SOA) curve on page 4 of the datasheet. At Tj = 25 °C, it supports single-pulse avalanche up to VDS = 240 V and ID = 0.35 A with pulse width ≤ 10 ms, enabling use in unclamped inductive switching applications.
BSP129E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel, Depletion Mode
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 240 V
- Current - Continuous Drain (Id) @ 25°C:
- 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 0V, 10V
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 350mA, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.7 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 108 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP129E6327 FAQ
1.How can I place an order for BSP129E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP129E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP129E6327 reliable?
The price and inventory of BSP129E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP129E6327 is usually 5 days.
3.What payment methods are accepted for BSP129E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP129E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSP129E6327?
BSP129E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP129E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP129E6327?
For technical support, including BSP129E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP129E6327 requirements.
6.How does Aetrix verify that BSP129E6327 is sourced from the original manufacturer or authorized distributors?
All BSP129E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP129E6327 meets industry standards.
7.What is the process for return or replacement of BSP129E6327?
All BSP129E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSP129E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP129E6327 part is unused and in its original packaging.
Return procedure for BSP129E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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