Infineon Technologies BSP129E6327T
- Part No.:
- BSP129E6327T
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP129E6327T.pdf
- Description:
- MOSFET N-CH 240V 350MA SOT223-4
- Quantity:
- Payment:

- Shipping:

Inventory:8,064
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Product details
Overview
BSP129E6327T from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor in PG-SOT223 package, rated for 240 V VDS, 6 Ω max RDS(on) at VGS = 0 V, and 0.35 A continuous drain current at 25 °C ambient. It features dv/dt ruggedness (6 kV/µs), AEC-Q101 qualification, and VGS(th) band sorting (L-band: −1.35 to −1.15 V) - used in high-reliability automotive load switching and solid-state relay driver stages.
For engineers reviewing the BSP129E6327T datasheet, BSP129E6327T pinout, BSP129E6327T application, or BSP129E6327T equivalent, key selection criteria include depletion-mode operation enabling normally-on logic, dv/dt immunity for inductive load commutation, thermal resistance (RthJS = 25 K/W), and AEC-Q101 compliance for under-hood automotive use.
Technical Context
This device operates as a depletion-mode MOSFET: it conducts at zero gate voltage and requires negative VGS to turn off. Its threshold voltage is specified at −1.4 V typical (−1.35 to −1.15 V for L-band variant), with IDSS ≥ 50 mA at VGS = 0 V and VDS = 10 V. The integrated body diode supports reverse recovery times of 53–80 ns and Qrr of 65–97 nC under defined test conditions.
Designed for robust switching in inductive environments, it delivers 6 kV/µs dv/dt immunity at ID = 0.36 A, VDS = 192 V, and di/dt = 200 A/µs. Its thermal design enables 1.8 W power dissipation on minimal PCB footprint (RthJA = 115 K/W) or 70 K/W with 6 cm² copper area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 240 V - maximum blocking voltage for automotive 24 V systems and industrial auxiliary supplies |
| RDS(on) max | 6 Ω at VGS = 0 V, ID = 25 mA - defines on-state loss in normally-on configurations |
| ID cont | 0.35 A at TA = 25 °C - usable continuous current with standard SMT mounting |
| dv/dt rating | 6 kV/µs - ensures reliable turn-off during fast voltage transients in relay/coil drivers |
| VGS(th) band | L-band: −1.35 to −1.15 V - tight threshold grouping for consistent turn-off behavior across production lots |
| Qg total | 3.8–5.7 nC - determines gate drive energy and switching speed in low-power control circuits |
| trr | 53–80 ns - body diode recovery performance critical for freewheeling in DC-DC and motor drivers |
Pinout & Package
PG-SOT223 package with 4-pin configuration (pin 1: gate; pin 2: source; pin 3: drain; pin 4: drain tab/soldering point). Thermal path optimized via exposed drain pad (pin 4) directly connected to PCB copper for junction-to-solder-point thermal resistance of 25 K/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; accepts negative VGS to deplete channel and turn off device |
| Pin 2 | Source | Reference node for gate drive and current return path; tied to system ground in most applications |
| Pin 3 | Drain | Main current output terminal; electrically connected to pin 4 (drain tab) for thermal and current conduction |
| Pin 4 | Drain tab | Exposed metal pad soldered to PCB copper; primary thermal interface and parallel current path for drain |
Key Features
| Feature | Design Value |
|---|---|
| Depletion-mode operation | Conducts at VGS = 0 V - eliminates need for active pull-up in fail-safe power-on circuits |
| AEC-Q101 qualified | Validated for automotive temperature range (−55 to 150 °C) and reliability stress tests |
| VGS(th) band sorting | L-band marking on reel label - enables predictable turn-off voltage without individual device screening |
| dv/dt ruggedness | 6 kV/µs immunity - prevents false turn-on during high-slew-rate voltage transients in inductive loads |
| Pb-free & halogen-free | RoHS-compliant plating and IEC61249-2-21 compliant - meets automotive environmental requirements |
Applications
| Automotive Load Switch | Solid-State Relay Driver |
|---|---|
Use Scenario: Controlling 12–24 V solenoids, fuel pumps, and HVAC actuators in engine control units. IC Role / Device Role / Timing Role: High-side or low-side depletion-mode switch enabling power-on default state and controlled shutdown. Use Value: Eliminates external bias circuitry; AEC-Q101 qualification ensures operation over full automotive temperature range. | Use Scenario: Driving opto-isolated triac or MOSFET gates in industrial AC solid-state relays. IC Role / Device Role / Timing Role: Low-power, high-voltage interface stage translating logic-level signals to isolated gate drives. Use Value: 240 V VDS and 6 kV/µs dv/dt rating prevent spurious turn-on during AC line transients. |
| DC-DC Converter Auxiliary Switch | Fail-Safe Power Sequencer |
Use Scenario: Synchronous rectification or auxiliary switching in 24 V input buck converters for telecom power supplies. IC Role / Device Role / Timing Role: Secondary-side switch leveraging low RDS(on) and fast tr/tf (4.1–6.2 ns / 35–53 ns). Use Value: Body diode trr (53–80 ns) and Qrr (65–97 nC) reduce switching losses during freewheeling. | Use Scenario: Enabling automatic power-up of microcontrollers or sensors upon system reset release. IC Role / Device Role / Timing Role: Normally-on switch that defaults to ON until MCU asserts negative gate control for safe shutdown. Use Value: Depletion-mode behavior provides inherent power-on functionality without external pull-up resistors or bias networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar depletion-mode MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BSP128E6327HTSA1 | VDS = 200 V, RDS(on) max = 10 Ω, same PG-SOT223 package and L-band VGS(th) | Lower voltage rating limits use in 240 V surge-tolerant designs | Select when 200 V blocking suffices and higher RDS(on) is acceptable for lower-cost BOM |
| DMN2004LK3-13 | N-channel enhancement-mode, VDS = 20 V, RDS(on) = 0.045 Ω, SOT-23 package | Requires positive gate drive; unsuitable for normally-on or high-voltage applications | Only viable for low-voltage logic-level switching where depletion-mode behavior is not required |
Compared with BSP129E6327T, BSP128 offers reduced voltage margin but identical packaging and threshold sorting, while DMN2004LK3 is an enhancement-mode part requiring redesign of gate drive and failing to meet 240 V or depletion-mode requirements.
Availability
BSP129E6327T is available at Aetrix Electronics and suitable for automotive load switching, solid-state relay interfaces, DC-DC auxiliary switching, and fail-safe power sequencing requiring stable component supply and AEC-Q101 compliance.
Supply support for BSP129E6327T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The SIPMOS® small-signal transistor product line targets high-reliability, high-voltage switching in automotive and industrial environments - emphasizing dv/dt immunity, AEC-Q101 qualification, and depletion-mode functionality for fail-safe operation.
FAQ
What is the gate threshold voltage range for BSP129E6327T?
The BSP129E6327T is sorted into VGS(th) bands per reel labeling; the E6327T suffix corresponds to L-band, with VGS(th) ranging from −1.35 V to −1.15 V at VDS = 3 V and ID = 108 µA. This tight banding ensures consistent turn-off behavior without per-device characterization.
Can BSP129E6327T be used as a high-side switch?
Yes - its depletion-mode operation allows direct connection between supply rail and drain, with gate driven negative relative to source to turn off. For high-side use, a level-shifted negative gate drive (e.g., charge pump or isolated driver) is required to achieve sufficient VGS < VGS(th) across operating temperature.
Is the body diode suitable for continuous freewheeling?
The integrated body diode supports continuous forward current up to 0.35 A at 25 °C ambient, matching the device's ID rating. However, its VSD is 0.79–1.2 V at IF = 0.35 A, and trr (53–80 ns) must be considered in high-frequency switching to avoid cross-conduction losses.
Does BSP129E6327T require a gate resistor?
A gate resistor (typically 10–100 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 6–10 pF) and PCB inductance, especially in high-dv/dt environments. It also controls turn-on/turn-off speed to balance switching loss and EMI, without compromising the 6 kV/µs dv/dt rating.
BSP129E6327T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel, Depletion Mode
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 240 V
- Current - Continuous Drain (Id) @ 25°C:
- 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 0V, 10V
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 350mA, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.7 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 108 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP129E6327T FAQ
1.How can I place an order for BSP129E6327T through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP129E6327T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP129E6327T reliable?
The price and inventory of BSP129E6327T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP129E6327T is usually 5 days.
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BSP129E6327T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP129E6327T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP129E6327T?
For technical support, including BSP129E6327T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP129E6327T requirements.
6.How does Aetrix verify that BSP129E6327T is sourced from the original manufacturer or authorized distributors?
All BSP129E6327T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP129E6327T meets industry standards.
7.What is the process for return or replacement of BSP129E6327T?
All BSP129E6327T units undergo pre-shipment inspection (PSI). If there is an issue with BSP129E6327T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP129E6327T part is unused and in its original packaging.
Return procedure for BSP129E6327T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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