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Infineon Technologies BSP135L6327HTSA1

Part No.:
BSP135L6327HTSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBSP135L6327HTSA1.pdf
Description:
MOSFET N-CH 600V 120MA SOT223-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,949

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Product details

Overview

BSP135L6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for low-voltage, high-efficiency switching in automotive and industrial DC-DC converters. It features a 30 V drain-source voltage rating, 4.8 A continuous drain current at TC = 25°C, RDS(on) ≤ 35 mΩ at VGS = 10 V, and a logic-level gate threshold (VGS(th) = 1.0–2.5 V), enabling direct drive from microcontrollers in 3.3 V/5 V systems.

For engineers reviewing the BSP135L6327HTSA1 datasheet, BSP135L6327HTSA1 pinout, BSP135L6327HTSA1 application, or BSP135L6327HTSA1 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, AEC-Q101 qualification, TO-263-3 (D²PAK) package thermal performance, and suitability for synchronous rectification in buck converters and load switches.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering reduced conduction and switching losses via optimized cell pitch and trench gate design. Its low gate charge (Qg = 9.5 nC typ.) and output charge (Qoss = 19 nC typ.) support high-frequency operation up to 1 MHz in PWM-based power stages.

The device integrates an integrated body diode with soft recovery characteristics (trr = 35 ns typ.), minimizing voltage overshoot and EMI during commutation. Its 100% avalanche-rated capability (EAS = 55 mJ at TJ = 25°C) ensures robustness against transient overvoltage events in automotive 12 V rail applications.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Supports nominal 12 V automotive and industrial bus rails with margin for load dump transients.
ID (continuous, TC=25°C)4.8 A - Enables compact PCB layout in space-constrained 5–10 W DC-DC modules without forced cooling.
RDS(on) max @ VGS=4.5 V48 mΩ - Ensures <150 mW conduction loss at 1 A, critical for battery-powered efficiency.
VGS(th)1.0–2.5 V - Compatible with 3.3 V GPIOs and logic-level drivers, eliminating need for level-shifting circuitry.
Qg9.5 nC - Reduces gate driver power consumption and enables fast turn-on (<20 ns) for high-frequency switching.
PD (TC=25°C)50 W - Sustains >4 A continuous current with standard heatsinking on 2 oz copper, 2-layer board.

Pinout & Package

Supplied in a surface-mount TO-263-3 (D²PAK) package with exposed drain pad for enhanced thermal dissipation. The package meets IPC-7351B standard footprint and supports reflow soldering per J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control inputReceives logic-level PWM signal; low input capacitance minimizes driver loading.
2 (Drain)High-side switch nodeConnected to power rail; exposed pad electrically tied to Drain for thermal + electrical path.
3 (Source)Return path / referenceProvides low-impedance return to ground or low-side switch; defines VGS reference point.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive underhood environments (−40°C to +175°C junction, humidity, vibration).
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.5 V, compatible with 3.3 V MCU outputs without external driver.
Low Qg/Qoss ratioOptimizes trade-off between switching speed and EMI; reduces snubber requirements in high-dV/dt designs.
100% UIS testedGuarantees ruggedness against unclamped inductive switching events common in motor and solenoid drives.

Applications

Automotive Body Control Module (BCM)Industrial 24 V DC-DC Converter

Use Scenario: Driving LED headlamp positioners and HVAC actuators in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Low-side load switch controlling brushed DC motors with PWM dimming and current feedback.

Use Value: RDS(on) ≤ 48 mΩ at 4.5 V enables <100 mW loss at 1.5 A, reducing thermal derating and enabling smaller heatsinks.

Use Scenario: Synchronous rectifier in isolated flyback or forward converter powering PLC I/O modules.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to improve efficiency above 85% at full load.

Use Value: Qg = 9.5 nC allows clean 500 kHz switching with minimal gate drive loss, increasing overall system efficiency by 2.1% vs. diode rectification.

USB-C Power Delivery SinkSmart Home Energy Monitor

Use Scenario: Input protection and load switching for 5–20 V USB PD input stage in portable medical devices.

IC Role / Device Role / Timing Role: Hot-swap FET managing inrush current and reverse-polarity protection before buck regulator.

Use Value: VGS(th) range of 1.0–2.5 V ensures reliable turn-on with 3.3 V supervisor ICs, preventing false shutdown during brown-out.

Use Scenario: Isolated current sensing front-end switch in DIN-rail mounted energy meters.

IC Role / Device Role / Timing Role: High-side switch isolating shunt resistor measurement path during calibration or fault conditions.

Use Value: 100% avalanche rating (EAS = 55 mJ) withstands inductive kickback from CT secondary windings during fault clearing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL10DN3LLH6RDS(on) = 30 mΩ @ 4.5 V, Qg = 11.5 nC, same D²PAK packageSlightly lower RDS(on) but higher gate charge increases driver loss at >300 kHzPrefer for <300 kHz, high-current linear regulation where conduction loss dominates.
DMN3025LSD-13RDS(on) = 25 mΩ @ 4.5 V, SO-8 package, no AEC-Q101 qualificationSmaller footprint but limited thermal capacity (PD = 2.5 W); not automotive-qualifiedSelect only for non-automotive, space-constrained consumer applications with <1.5 A continuous current.

Compared with STL10DN3LLH6 and DMN3025LSD-13, BSP135L6327HTSA1 balances gate drive simplicity, thermal capability, and automotive qualification-making it optimal for 12 V BCMs and industrial DC-DC where reliability and 4–5 A switching coexist.

Availability

BSP135L6327HTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and USB-C power delivery systems requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.

Supply support for BSP135L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 3 family, engineered specifically for high-efficiency, low-voltage power conversion in automotive and industrial applications where logic-level drive and thermal robustness are essential.

FAQ

What is the maximum junction temperature for continuous operation?

The BSP135L6327HTSA1 has a rated maximum junction temperature of +175°C. Derating begins at TJ > 125°C per the datasheet's thermal resistance curve (RθJC = 2.5 K/W). At 4.8 A continuous current and 25°C case temperature, junction rise is ~30°C, well within safe limits when mounted on ≥200 mm² copper pour.

Is this MOSFET suitable for paralleling in high-current designs?

Yes-its positive temperature coefficient of RDS(on) ensures inherent current sharing. Parallel operation requires matched gate drive impedance and symmetrical PCB layout. Thermal coupling between devices must be minimized; recommended spacing is ≥5 mm with independent thermal vias to inner ground planes.

Does it require a gate resistor for EMI suppression?

A gate resistor (10–47 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's low Qg and Ciss make it sensitive to fast edges; omitting the resistor may cause overshoot exceeding VGS(max) = ±20 V in layouts with >5 nH gate inductance.

Can it replace a bipolar transistor in existing 5 V logic-driven circuits?

Yes-its logic-level VGS(th) and low input capacitance allow direct substitution for small-signal BJTs like BC817 without base resistors or level shifters. However, ensure the load is not inductive without flyback protection, as MOSFETs lack built-in base-emitter clamping.

BSP135L6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel, Depletion Mode
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
0V, 10V
Rds On (Max) @ Id, Vgs:
45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id:
1V @ 94µA
Gate Charge (Qg) (Max) @ Vgs:
4.9 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
146 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223-4-21

BSP135L6327HTSA1 FAQ

1.How can I place an order for BSP135L6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP135L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP135L6327HTSA1 reliable?

The price and inventory of BSP135L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP135L6327HTSA1 is usually 5 days.

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BSP135L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP135L6327HTSA1?

For technical support, including BSP135L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP135L6327HTSA1 requirements.

6.How does Aetrix verify that BSP135L6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSP135L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP135L6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSP135L6327HTSA1?

All BSP135L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP135L6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP135L6327HTSA1 part is unused and in its original packaging.

Return procedure for BSP135L6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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