Infineon Technologies BSP149L6327HTSA1

Overview

BSP149L6327HTSA1 from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor rated for 200 V drain-source breakdown voltage, 3.5 Ω maximum R_DS(on) at V_GS = 0 V, and 0.14 A minimum I_DSS, qualified per AEC-Q101 for automotive use in high-dv/dt switching circuits such as LED drivers and power supply hold-up stages.

For engineers reviewing the BSP149L6327HTSA1 datasheet, BSP149L6327HTSA1 pinout, BSP149L6327HTSA1 application, or BSP149L6327HTSA1 equivalent, key selection criteria include its depletion-mode operation enabling zero-bias turn-on, dv/dt ruggedness up to 6 kV/µs, V_GS(th) banding (H6327 marking), and SOT-223 package thermal performance with R_thJS = 25 K/W.

Technical Context

This device operates in depletion mode, conducting at V_GS = 0 V with a typical threshold voltage of –1.4 V and a range from –2.1 V to –1.0 V across sorted bands. Its dv/dt rating of 6 kV/µs ensures robustness against parasitic turn-on in inductive switching environments.

It integrates a monolithic reverse diode with 0.9–1.2 V forward voltage at 0.66 A and 42–65 ns reverse recovery time, supporting synchronous rectification and freewheeling functions without external diodes in low-power SMPS topologies.

Key Specifications

Pinout & Package

Package: PG-SOT223 (standardized JEDEC TO-261AA variant), surface-mount, 4-pin configuration with drain-connected tab (pin 4) for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode MOSFET applications.

Compared with DMN2004LK3-7 and BSP170G, BSP149L6327HTSA1 uniquely combines 200 V rating, depletion-mode operation, and factory-sorted V_GS(th) bands - enabling self-biased, high-voltage current regulation without gate drive or trimming.

Availability

BSP149L6327HTSA1 is available at Aetrix Electronics and suitable for automotive lighting control, industrial power supply hold-up circuits, and LED driver reference designs requiring stable component supply and AEC-Q101 compliance.

Supply support for BSP149L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The SIPMOS® small-signal transistor product line delivers high-reliability depletion- and enhancement-mode MOSFETs optimized for automotive, industrial, and consumer power control applications where simplicity, ruggedness, and qualification matter.

FAQ

What does the 'H6327' suffix indicate in BSP149L6327HTSA1?

The 'H6327' marking denotes tape-and-reel packaging with 1000 units per reel and indicates that the devices are sorted into a specific V_GS(th) band (band H per Infineon's internal classification). This banding enables tighter current matching across units in precision analog current source applications without post-manufacture calibration.

Can BSP149L6327HTSA1 be used as a high-side switch with gate grounded?

Yes - as a depletion-mode device, it conducts fully when V_GS = 0 V. With source tied to load and drain to supply, grounding the gate maintains conduction. However, ensure the source voltage never exceeds the gate voltage by more than ±20 V to avoid exceeding V_GS rating, especially during transients.

Is the integrated reverse diode rated for continuous conduction?

Yes - the monolithic body diode supports continuous forward current up to 0.66 A at T_A = 25 °C, matching the transistor's I_D rating. Its 0.9–1.2 V forward voltage and 42–65 ns recovery time make it suitable for freewheeling in low-frequency (<100 kHz), low-duty-cycle applications like flyback snubbers or relay coil suppression.

How does the dv/dt rating of 6 kV/µs impact PCB layout?

This rating reflects tested immunity to parasitic turn-on during fast voltage transients. To maintain it, minimize gate loop area, use short direct traces from gate to source, avoid routing gate lines near noisy drain nodes, and ensure solid ground return under the SOT-223 tab. Layout-induced coupling can degrade effective dv/dt tolerance even if the device is rated.