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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSP170PE6327T

Name: BSP170PE6327T
Brand: Infineon Technologies
SKU: BSP170PE6327T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSP170PE6327T

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: BSP170PE6327T.pdf

Description:: MOSFET P-CH 60V 1.9A SOT223-4

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Product details

Overview

BSP170PE6327T from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for high-speed switching in low-voltage load-switch and power-management applications. It features R_DS(on) = 1.8 Ω (max) at V_GS = −4.5 V, continuous drain current I_D = −190 mA, V_DS = −60 V, and ultra-small SOT-23 package. It is commonly used in USB port power switches and battery protection circuits.

For engineers reviewing the BSP170PE6327T datasheet, BSP170PE6327T pinout, BSP170PE6327T application, or BSP170PE6327T equivalent, key selection criteria include guaranteed R_DS(on) at −4.5 V gate drive, low gate charge (Q_G = 1.3 nC), thermal resistance (R_thJA = 350 K/W), and AEC-Q101 qualification status for automotive-grade reliability.

Technical Context

This discrete MOSFET operates in enhancement mode with a negative threshold voltage (V_GS(th) = −0.5 V to −1.5 V), enabling reliable turn-on with standard logic-level gate drives. Its low input capacitance (C_iss = 45 pF) and fast switching times (t_on = 3.5 ns, t_off = 12 ns) support high-frequency PWM control in compact DC-DC and load-switch designs.

The device uses TrenchStop™ process technology for improved conduction efficiency and robust avalanche capability (E_AS = 30 mJ). Its SOT-23 footprint supports automated placement and reflow soldering in space-constrained PCB layouts typical of portable and automotive body electronics.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−60 V - Supports operation across 12–48 V automotive and industrial supply rails without breakdown risk.
R_DS(on) max @ V_GS = −4.5 V	1.8 Ω - Enables ≤350 mW conduction loss at 190 mA, suitable for thermally constrained SOT-23 layouts.
I_D continuous	−190 mA - Rated for sustained load-switch duty in USB Type-C port controllers and smart e-fuse ICs.
Q_G	1.3 nC - Allows fast gate drive with minimal MCU GPIO current, reducing switching losses in 1–10 MHz PWM schemes.
R_thJA	350 K/W - Limits junction temperature rise to <100 °C under 150 mW dissipation on standard 2-layer FR4 PCB.
Avalanche energy E_AS	30 mJ - Provides single-pulse inductive load robustness in relay replacement and solenoid driving.

Pinout & Package

Supplied in JEDEC-standard SOT-23 (TO-236AB) plastic package with three terminals: Gate (G), Drain (D), Source (S). The package measures 2.9 mm × 1.3 mm × 1.0 mm and is compatible with IPC-7351B footprint IPC7351B_SOT23_29X13_N.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Current output path	Connected to load side of high-side switch; requires thermal relief pad for heat dissipation.
2 (Source)	Reference node / return path	Tied to system ground or negative rail; serves as common reference for gate drive and current sensing.
3 (Gate)	Control input	Driven by open-drain or push-pull logic; requires series resistor (10–100 Ω) to damp ringing during fast transitions.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Guaranteed turn-on with −4.5 V gate-source voltage, eliminating need for level-shifting circuitry in 5 V/3.3 V systems.
AEC-Q101 qualified	Validated for automotive ambient temperatures (−40 °C to +150 °C) and mechanical shock/vibration per JESD22-A114.
Low gate charge	1.3 nC enables <100 ns total switching time with 10 mA gate driver, minimizing overlap loss in synchronous rectifiers.
Enhancement-mode operation	Normally-off behavior ensures fail-safe power-off state during MCU reset or supply brownout conditions.

Applications

USB Power Delivery Switch

Automotive Body Control Module

Use Scenario: Selective power routing to USB-C ports in infotainment head units with overcurrent detection.

IC Role / Device Role / Timing Role: High-side load switch controlling 5 V/3 A bus with fast fault response (<1 µs).

Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 1.5 A charging, preserving PD negotiation integrity.

Use Scenario: Controlled power enable for LED interior lighting and sensor modules in door modules.

IC Role / Device Role / Timing Role: Low-side switch for PWM-dimmed 12 V LED strings with integrated current limiting.

Use Value: AEC-Q101 rating ensures stable operation across vehicle life cycle; fast t_off prevents ghost illumination during rapid dimming transitions.

Industrial Sensor Node Power Gating

Portable Medical Device Battery Protection

Use Scenario: Periodic wake-up and measurement cycles in battery-powered environmental sensors.

IC Role / Device Role / Timing Role: Load switch isolating analog front-end and ADC during sleep mode to reduce quiescent current.

Use Value: Sub-1 µA I_GSS leakage preserves battery life over multi-year deployments; small SOT-23 footprint saves board area.

Use Scenario: Overvoltage and reverse-polarity protection in handheld diagnostic tools using Li-ion cells.

IC Role / Device Role / Timing Role: Back-to-back MOSFET configuration with external controller for bidirectional blocking.

Use Value: Matched V_GS(th) tolerance (±0.5 V) ensures symmetrical turn-on, preventing shoot-through during polarity reversal events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load-switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2013LFG-7	R_DS(on) = 2.2 Ω @ −4.5 V; Q_G = 1.6 nC; non-AEC-Q101 rated	Targeted at consumer-grade portable electronics only	Select when cost sensitivity outweighs automotive qualification requirements.
SI2301DS-T1-BE3	R_DS(on) = 1.4 Ω @ −4.5 V; I_D = −2.4 A; larger SOT-23-3 footprint	Higher current capacity but higher gate charge (3.5 nC) limits switching speed	Choose for higher-current loads where thermal margin exceeds 350 mW and layout allows larger pad.

Compared with DMN2013LFG-7 and SI2301DS-T1-BE3, BSP170PE6327T uniquely balances AEC-Q101 compliance, sub-2 Ω R_DS(on), and ultra-low Q_G in the smallest SOT-23 variant-making it optimal for space- and reliability-critical automotive USB and sensor power gating.

Availability

BSP170PE6327T is available at Aetrix Electronics and suitable for USB Power Delivery implementations, automotive body electronics, industrial sensor nodes, and portable medical devices requiring stable component supply and long-term lifecycle support.

Supply support for BSP170PE6327T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

The BSP170PE6327T belongs to Infineon's OptiMOS™ 2.0 small-signal MOSFET product line, engineered specifically for high-efficiency, space-constrained load-switching and power-distribution functions in automotive and industrial applications.

FAQ

What is the maximum allowable junction temperature for BSP170PE6327T?

The absolute maximum junction temperature is +150 °C, validated under AEC-Q101 stress testing. Derating begins at T_J > 125 °C; for continuous 190 mA operation, thermal design must ensure T_J stays below this limit using appropriate copper area and airflow.

Does BSP170PE6327T require a gate pull-down resistor in circuit?

Yes-a 10 kΩ to 100 kΩ gate-to-source pull-down resistor is recommended to ensure defined off-state during MCU power-up, reset, or floating control lines. This prevents unintended conduction due to noise coupling into the high-impedance gate terminal.

Can BSP170PE6327T be used in parallel with identical devices for higher current handling?

No-parallel operation is not recommended due to mismatch in V_GS(th) (±0.5 V) and R_DS(on) (±20%), which causes current imbalance and thermal runaway. For higher current, select a single-device alternative such as BSP296P or IPP046N15N5.

Is the SOT-23 package of BSP170PE6327T lead-free and RoHS compliant?

Yes-the device is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The package marking "PE6327T" and date code are laser-etched for full traceability.

BSP170PE6327T Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 1.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 410 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-4

BSP170PE6327T FAQ

1.How can I place an order for BSP170PE6327T through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP170PE6327T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP170PE6327T reliable?

The price and inventory of BSP170PE6327T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP170PE6327T is usually 5 days.

3.What payment methods are accepted for BSP170PE6327T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP170PE6327T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP170PE6327T?

BSP170PE6327T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP170PE6327T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP170PE6327T?

For technical support, including BSP170PE6327T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP170PE6327T requirements.

6.How does Aetrix verify that BSP170PE6327T is sourced from the original manufacturer or authorized distributors?

All BSP170PE6327T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP170PE6327T meets industry standards.

7.What is the process for return or replacement of BSP170PE6327T?

All BSP170PE6327T units undergo pre-shipment inspection (PSI). If there is an issue with BSP170PE6327T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP170PE6327T part is unused and in its original packaging.

Return procedure for BSP170PE6327T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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