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Infineon Technologies BSP171PE6327T

Part No.:
BSP171PE6327T
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBSP171PE6327T.pdf
Description:
MOSFET P-CH 60V 1.9A SOT223-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,232

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Product details

Overview

BSP171PE6327T from Infineon Technologies is a P-channel enhancement-mode SIPMOS® small-signal MOSFET in PG-SOT223 package, rated for -60 V VBR(DSS), 0.21 Ω RDS(on) at VGS = -10 V and ID = -1.9 A, avalanche-rated, and qualified to AEC-Q101 for automotive use. It serves as a logic-level load switch in low-power DC-DC converters and LED drivers.

For engineers reviewing the BSP171PE6327T datasheet, BSP171PE6327T pinout, BSP171PE6327T application, or BSP171PE6327T equivalent, key selection criteria include its -1.5 V gate threshold voltage, 1.4–2.7 S transconductance, -1.9 A continuous drain current, and robust dv/dt rating of 1 kV/µs under specified conditions.

Technical Context

This device operates in enhancement mode with a negative gate threshold (VGS(th) = -1 to -2 V), requiring active pull-down for turn-on in high-side configurations. Its RDS(on) remains stable across temperature (25 °C to 150 °C) due to SIPMOS® process optimization, and it supports fast switching with tr = 25–33 ns and tf = 87–130 ns at VDD = -25 V.

The integrated body diode exhibits trr = 80–120 ns and Qrr = 125–190 nC, enabling reliable operation in flyback and synchronous rectification topologies. Avalanche energy rating EAS = 1.8 mJ (ID = -1.9 A, RGS = 25 Ω) confirms ruggedness against inductive load transients.

Key Specifications

ParameterValue and Actual Design Meaning
VBR(DSS)-60 V - Maximum blocking voltage before avalanche conduction begins
RDS(on) max0.21 Ω at VGS = -10 V, ID = -1.9 A - Enables <1.5 W conduction loss at rated current
VGS(th)-1.5 V typ - Ensures full enhancement with standard 3.3 V or 5 V logic-level drive
ID cont-1.9 A at TA = 70 °C - Supports compact thermal design on minimal PCB copper area
EAS1.8 mJ - Withstands single-pulse inductive energy without failure
dv/dt rating1 kV/µs - Resists false triggering in noisy high-dv/dt environments
Qg13–20 nC - Determines gate driver current requirement for 100 kHz+ switching

Pinout & Package

Package: PG-SOT223 (standard SOT-223 outline with exposed drain pad for thermal performance; JEDEC MO-178 variant).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Drain)Main current path collectorConnected to large copper pour for heat dissipation; electrically tied to tab
Pin 2 (Gate)Control terminalHigh-impedance input requiring <100 nA leakage; sensitive to ESD (Class 1a)
Pin 3 (Source)Reference node for gate driveCommon return for load current; defines VGS reference point
Tab (Drain)Thermal and electrical extension of DrainMust be soldered to PCB copper for RthJA = 70 K/W (6 cm² cooling)

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) ≤ -2 V enables direct interface with 3.3 V microcontrollers without level-shifting
Avalanche-ratedGuaranteed single-pulse EAS = 1.8 mJ supports unclamped inductive switching in relay drivers
AEC-Q101 qualifiedValidated for automotive powertrain and body electronics per stress test requirements
Halogen-free & RoHSComplies with IEC61249-2-21 and EU RoHS Directive (Pb-free plating)

Applications

Automotive Door ModuleIndustrial Sensor Interface

Use Scenario: Driving window lift motors and mirror actuators in 12 V battery-powered door control units.

IC Role / Device Role / Timing Role: High-side load switch controlling bidirectional motor current via H-bridge half-bridge configuration.

Use Value: -60 V rating accommodates load dump transients up to ISO 7637-2 Pulse 5a; RDS(on) < 0.25 Ω limits self-heating during 1.5 A stall current.

Use Scenario: Isolating analog sensor outputs (e.g., pressure, temperature) from shared supply rails in PLC I/O modules.

IC Role / Device Role / Timing Role: Low-leakage power switch enabling rail-to-rail signal integrity during sensor sleep/wake cycles.

Use Value: IDSS ≤ -0.1 µA at 25 °C ensures <10 nA channel leakage, preserving sub-µA sensor bias accuracy.

LED Lighting DriverUSB-C Power Delivery Load Switch

Use Scenario: PWM dimming control of 24 V architectural LED strings in smart building systems.

IC Role / Device Role / Timing Role: Low-side current sink switch operating at 1–10 kHz with fast tf < 130 ns.

Use Value: Qg = 13–20 nC allows clean edge transitions using 10 mA gate drivers; body diode trr < 120 ns prevents cross-conduction in synchronous buck stages.

Use Scenario: Enabling/disabling VBUS (5–20 V) to downstream USB-C peripherals during hot-plug events.

IC Role / Device Role / Timing Role: Controlled power sequencer with soft-start behavior enabled by gate capacitance and external RC.

Use Value: dv/dt rating of 1 kV/µs suppresses false turn-on during rapid VBUS ramp-up; RDS(on) stability over temperature ensures consistent current limiting across -40 to +125 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMG2305UVT-7RDS(on) = 0.045 Ω @ VGS = -4.5 V; SOT-23 package; lower ID rating (-4.2 A)Higher current density but limited thermal mass; unsuitable for >1 W continuous dissipationSelect when board space is critical and peak ID < 2 A with aggressive heatsinking
IRLML6344TRPBFRDS(on) = 0.055 Ω @ VGS = -4.5 V; SOT-23; no AEC-Q101 qualificationLacks automotive stress validation; higher gate charge (22 nC) increases driver demandPrefer for cost-sensitive industrial consumer designs where AEC-Q101 is not mandated

Compared with DMG2305UVT-7 and IRLML6344TRPBF, BSP171PE6327T trades slightly higher RDS(on) for superior thermal robustness (SOT223 vs SOT-23), guaranteed avalanche capability, and automotive-grade reliability-making it optimal for thermally constrained yet mission-critical 12–24 V load switching.

Availability

BSP171PE6327T is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and USB-C power delivery load switching requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSP171PE6327T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

The BSP171P belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered for high-reliability, low-voltage logic-level switching in automotive and industrial power control applications.

FAQ

Is BSP171PE6327T suitable for high-side switching in 24 V automotive systems?

Yes. Its -60 V VBR(DSS), AEC-Q101 qualification, and 1 kV/µs dv/dt rating make it suitable for high-side 24 V loads subject to load dump transients per ISO 7637-2. The -1.5 V VGS(th) ensures reliable turn-on with 3.3 V or 5 V controllers when used with appropriate gate pull-up networks.

What is the maximum continuous drain current at 100 °C ambient?

At TA = 100 °C, continuous drain current is derated to approximately -1.1 A based on the thermal resistance curve (RthJA = 70 K/W with 6 cm² copper). This assumes vertical PCB mounting in still air and proper soldering of the drain tab to maximize heat transfer.

Does BSP171PE6327T include an integrated ESD protection diode?

No. While rated Class 1a per JESD22-A114-HBM (±250 V), it lacks internal ESD clamps beyond inherent MOSFET junction behavior. External TVS or RC filtering is recommended for gate protection in high-noise environments such as automotive CAN domains or motor drive zones.

Can the body diode be used for reverse polarity protection?

Yes. The integrated body diode supports continuous forward current of -1.9 A and pulse current up to -7.6 A. For reverse polarity protection, connect source to input and drain to output; ensure VSD ≤ -1.1 V at full load to limit power dissipation, and verify trr does not cause shoot-through in adjacent FETs.

BSP171PE6327T Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:
2V @ 460µA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
460 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223-4

BSP171PE6327T FAQ

1.How can I place an order for BSP171PE6327T through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP171PE6327T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP171PE6327T reliable?

The price and inventory of BSP171PE6327T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP171PE6327T is usually 5 days.

3.What payment methods are accepted for BSP171PE6327T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP171PE6327T transactions.

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4.How is shipping managed for BSP171PE6327T?

BSP171PE6327T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP171PE6327T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP171PE6327T?

For technical support, including BSP171PE6327T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP171PE6327T requirements.

6.How does Aetrix verify that BSP171PE6327T is sourced from the original manufacturer or authorized distributors?

All BSP171PE6327T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP171PE6327T meets industry standards.

7.What is the process for return or replacement of BSP171PE6327T?

All BSP171PE6327T units undergo pre-shipment inspection (PSI). If there is an issue with BSP171PE6327T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP171PE6327T part is unused and in its original packaging.

Return procedure for BSP171PE6327T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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