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Infineon Technologies BSP295E6327

Part No.:
BSP295E6327
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBSP295E6327.pdf
Description:
MOSFET N-CH 60V 1.8A SOT223-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,650

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Product details

Overview

BSP295E6327 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ small-signal MOSFET in PG-SOT223 package, rated for 60 V VDS, 1.8 A continuous drain current at 25°C, and 0.3 Ω max RDS(on) at VGS = 10 V. It features dv/dt ruggedness (6 kV/µs), AEC-Q101 qualification, and integrated body diode with 1.8 A forward current capability - used in automotive load switching and industrial DC-DC converter high-side control.

For engineers reviewing the BSP295E6327 datasheet, BSP295E6327 pinout, BSP295E6327 application, or BSP295E6327 equivalent, key selection criteria include its 60 V breakdown voltage, 0.3 Ω on-resistance at 10 V gate drive, 1.44 A derated current at 70°C, dv/dt immunity, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This discrete power MOSFET operates in enhancement mode with a gate threshold voltage of 0.8–1.8 V and supports logic-level drive (VGS(th) typ. 1.1 V). Its dynamic performance includes 295 pF typical input capacitance, 95 pF output capacitance, and 5.6 nC gate-to-drain charge - enabling fast switching in low-power SMPS and motor driver half-bridges.

The device integrates a robust intrinsic body diode with 36 ns reverse recovery time and 38 nC reverse recovery charge, supporting synchronous rectification and freewheeling in inductive loads. Thermal resistance from junction to soldering point is 15–25 K/W, optimized for PCB-mounted thermal dissipation on 6 cm² copper area.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Max60 V - supports 48 V automotive and industrial bus systems with margin
RDS(on) Max0.3 Ω @ VGS = 10 V, ID = 1.8 A - enables <1 W conduction loss at full rated current
ID Cont. (TA=25°C)1.8 A - suitable for medium-current switching in compact SMD layouts
dv/dt Rating6 kV/µs - ensures reliable operation under fast transient voltage stress in noisy environments
VGS(th)0.8–1.8 V - compatible with 3.3 V and 5 V microcontroller GPIO direct drive
Qgd5.6–8.4 nC - determines Miller-effect-induced switching delay and gate driver sizing
trr36–45 ns - limits reverse recovery losses in high-frequency flyback and buck converters

Pinout & Package

Package: PG-SOT223 (standardized JEDEC TO-261AA variant with exposed drain pad; 4-pin configuration, Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain tab).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)GateControl terminal; requires ≤±20 V bias; low input capacitance (295 pF) eases driving
Pin 2 (D)DrainMain current path output; electrically connected to exposed metal tab for thermal conduction
Pin 3 (S)SourceReference node for gate drive; tied to ground or low-side switch common in most topologies
Pin 4 (D Tab)Drain (thermal & electrical)Primary thermal interface; must be soldered to ≥6 cm² copper pour for RthJA ≤ 70 K/W

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive applications including engine control, lighting, and body electronics
dv/dt ruggedness6 kV/µs rating prevents false turn-on during high-slew transients in inductive circuits
Logic-level gate driveVGS(th) max 1.8 V enables direct interfacing with 3.3 V MCU outputs without level-shifting
Halogen-free & RoHSComplies with IEC61249-2-21 and EU RoHS Directive for environmentally constrained designs
Integrated body diode1.8 A continuous forward current and 36 ns trr support efficient freewheeling in H-bridge and buck stages

Applications

Automotive LED Headlamp SwitchingIndustrial 24 V DC-DC Converter High-Side Switch

Use Scenario: PWM-controlled high-beam LED string switching in vehicle headlamps with EMI-sensitive CAN bus proximity.

IC Role / Device Role / Timing Role: High-side load switch controlling up to 1.8 A LED current; handles 60 V battery transients and load-dump spikes.

Use Value: dv/dt rating prevents spurious turn-on during 12 V/24 V system transients; AEC-Q101 ensures lifetime reliability under thermal cycling.

Use Scenario: High-side main switch in isolated 24 V input, 5 V output flyback converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary switching element operating at 100–250 kHz; driven by UC384x controller via gate resistor network.

Use Value: Low Qgd (5.6–8.4 nC) reduces Miller plateau duration, improving efficiency and EMI profile at high frequency.

USB-C Power Delivery Load SwitchSmart Home Relay Driver Stage

Use Scenario: Inrush-limited 20 V auxiliary rail switch in USB PD sink adapters with overvoltage protection.

IC Role / Device Role / Timing Role: Controlled hot-swap FET placed between input capacitor and downstream buck regulator.

Use Value: 0.3 Ω RDS(on) limits voltage drop to <36 mV at 120 mA standby, preserving regulation margin.

Use Scenario: Solid-state replacement for electromechanical relay in smart thermostat HVAC control board.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage (48 V) load switch driving 12 V coil relays or small solenoids.

Use Value: 60 V VDS withstands back-EMF spikes >40 V; 1.8 A rating covers relay coil surge currents up to 7.2 A pulsed.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3028LSD-1330 V VDS, 0.028 Ω RDS(on), SOT-23 package - lower voltage, lower RDS(on), smaller footprintNot suitable for 48 V+ systems; limited to 3.3 V logic-level apps with <1 A continuous loadSelect only if operating voltage ≤30 V and space-constrained; not AEC-Q101 qualified
IPB180N04S4-0240 V VDS, 1.8 mΩ RDS(on), TO-263 package - higher current (180 A), vastly larger thermal massOver-engineered for signal-level switching; requires heatsink and complex layoutChoose only for high-power motor drives; incompatible with SOT223 footprint and low-current drive requirements

Compared with DMN3028LSD-13 and IPB180N04S4-02, BSP295E6327 uniquely balances 60 V rating, AEC-Q101 compliance, SOT223 thermal scalability, and logic-level gate drive - making it optimal for automotive and industrial 24–48 V medium-current switching where reliability, size, and drive simplicity are jointly critical.

Availability

BSP295E6327 is available at Aetrix Electronics and suitable for automotive lighting control, industrial DC-DC converter design, and smart home relay driver applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BSP295E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs and discrete devices, with global manufacturing and quality certification infrastructure.

The BSP295 belongs to Infineon's SIPMOS™ small-signal MOSFET product line, engineered for robust, logic-compatible switching in automotive body electronics and industrial power supplies where AEC-Q101 reliability and thermal efficiency are mandatory.

FAQ

Is BSP295E6327 suitable for 48 V automotive battery systems?

Yes. With 60 V VDS rating and AEC-Q101 qualification, BSP295E6327 withstands standard 48 V automotive transients including load dump (up to 65 V) and cold-crank conditions. Its 6 kV/µs dv/dt rating further ensures immunity against noise-induced false turn-on in such environments.

What is the recommended PCB layout for thermal performance?

Mount the device on a 40 mm × 40 mm × 1.5 mm FR4 PCB with ≥6 cm² of 70 µm thick copper connected to the drain tab (Pin 2 and Pin 4). Avoid thermal vias under the tab; use solid copper pour. This achieves RthJA ≤ 70 K/W, enabling 1.44 A continuous current at 70°C ambient.

Can BSP295E6327 be driven directly by a 3.3 V microcontroller?

Yes. Its gate threshold voltage range (0.8–1.8 V) and low input capacitance (295 pF typ.) allow reliable turn-on with 3.3 V GPIO. At VGS = 3.3 V, RDS(on) is ~0.5 Ω (max), delivering ~1.2 A continuous current - sufficient for many low-power switching tasks without external level-shifting.

Does BSP295E6327 include avalanche energy rating?

Yes. The datasheet specifies typical single-pulse avalanche energy (EAS) of 40 mJ at Tj = 25°C (ID = 3.9 A, VDD = 25 V), de-rating to ~20 mJ at 125°C. This supports robust operation in inductive switching applications like relay drivers where unclamped inductive kick may occur.

BSP295E6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
368 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223-4

BSP295E6327 FAQ

1.How can I place an order for BSP295E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP295E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP295E6327 reliable?

The price and inventory of BSP295E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP295E6327 is usually 5 days.

3.What payment methods are accepted for BSP295E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP295E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP295E6327?

BSP295E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP295E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP295E6327?

For technical support, including BSP295E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP295E6327 requirements.

6.How does Aetrix verify that BSP295E6327 is sourced from the original manufacturer or authorized distributors?

All BSP295E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP295E6327 meets industry standards.

7.What is the process for return or replacement of BSP295E6327?

All BSP295E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSP295E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP295E6327 part is unused and in its original packaging.

Return procedure for BSP295E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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