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Infineon Technologies BSP296E6327
- Part No.:
- BSP296E6327
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP296E6327.pdf
- Description:
- MOSFET N-CH 100V 1.1A SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:7,794
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Product details
Overview
BSP296E6327 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS small-signal transistor in SOT-223 package, rated for 100 V VDS, 1 A continuous drain current at TA = 42 °C, and 0.8 Ω RDS(on) at VGS = 10 V. It features low gate threshold (0.8–2.0 V), integrated body diode, and is used in DC-DC converter synchronous rectification and industrial power control.
For engineers reviewing the BSP296E6327 datasheet, BSP296E6327 pinout, BSP296E6327 application, or BSP296E6327 equivalent, key selection criteria include logic-level drive compatibility, thermal resistance (RthJA ≤ 70 K/W), safe operating area under pulsed conditions, and body diode forward voltage (VSD = 0.95–1.3 V at IF = 2 A).
Technical Context
This MOSFET operates in enhancement mode with a gate threshold voltage range of 0.8–2.0 V, enabling direct drive from 3.3 V or 5 V microcontrollers without level-shifting. Its RDS(on) remains stable up to Tj = 100 °C, with typical values of 0.55 Ω at VGS = 4.5 V and 0.95 Ω max at VGS = 10 V, supporting efficient low-side switching in compact power stages.
Dynamic performance includes Ciss = 300–400 pF, Coss = 60–90 pF, and fast switching times: td(on) ≤ 12 ns, tr ≤ 25 ns, td(off) ≤ 160 ns, tf ≤ 85 ns (VDD = 30 V, ID = 0.29 A, RGS = 50 Ω), suitable for PWM frequencies up to 500 kHz in non-isolated converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input rails up to 48 V nominal with margin for transients in industrial DC supplies |
| ID (continuous) | 1 A at TA = 42 °C - defines maximum steady-state load current on standard PCB without heatsink |
| RDS(on) | 0.8 Ω max at VGS = 10 V - determines conduction loss (Pcond ≈ 0.8 W at 1 A) and thermal rise |
| VGS(th) | 0.8–2.0 V - ensures reliable turn-on with 3.3 V GPIO or low-voltage logic outputs |
| Ptot | 1.8 W at TA = 25 °C - sets absolute power limit before thermal derating begins |
| Ciss | 300–400 pF - impacts gate drive strength requirement and switching loss at high frequency |
| VSD | 0.95–1.3 V at IF = 2 A - defines forward drop and power dissipation when used as freewheeling diode |
Pinout & Package
Package: SOT-223 (4-pin variant with dual drain pins). Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S), Pin 4 = Drain (D). Dual drain configuration reduces thermal resistance and improves current handling per lead frame.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | Control terminal; accepts logic-level voltage to modulate channel conductivity |
| Pin 2 | Drain (D) | Main current entry point; electrically tied to Pin 4; connects to high-side or switched rail |
| Pin 3 | Source (S) | Current return path and reference node for gate drive; common connection to ground or low-side node |
| Pin 4 | Drain (D) | Second drain terminal; paralleled with Pin 2 to lower bond wire inductance and thermal resistance |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V, compatible with 3.3 V/5 V MCU I/O without external driver |
| Low RDS(on) at low VGS | 0.55 Ω typ at VGS = 4.5 V enables <1 W conduction loss at 1 A in space-constrained designs |
| Integrated body diode | Rated for 1 A continuous / 4 A pulsed reverse current with VSD ≤ 1.3 V - eliminates need for external freewheeling diode in buck topologies |
| Thermal robustness | RthJA ≤ 70 K/W on 40 mm × 40 mm PCB with 6 cm² copper - supports operation up to +150 °C junction temperature |
| ESD protection | HBM Class 1 (≥2 kV) - sufficient for board-level handling without special ESD controls during assembly |
Applications
| DC-DC Synchronous Rectifier | Industrial Motor Control |
|---|---|
Use Scenario: Used as low-side switch in 12–48 V input buck converters delivering up to 1 A output. IC Role / Device Role / Timing Role: Replaces Schottky diode in synchronous rectification stage to reduce conduction loss and improve efficiency by >3%. Use Value: RDS(on) = 0.8 Ω and VSD = 0.95 V enable combined conduction loss <0.9 W at full load, lowering thermal footprint. | Use Scenario: Drives gate of high-side N-channel MOSFET via bootstrap circuit in half-bridge motor driver ICs. IC Role / Device Role / Timing Role: Acts as level-shifted high-side gate driver switch with fast turn-off (tf ≤ 85 ns) to minimize shoot-through risk. Use Value: Low Coss (60–90 pF) and Crss (30–45 pF) reduce Miller effect, improving switching controllability at 100–200 kHz PWM. |
| LED Constant-Current Driver | Power Supply OR-ing Circuit |
Use Scenario: Controls current through high-brightness LED strings in 24 V industrial lighting systems. IC Role / Device Role / Timing Role: Functions as linear or PWM-controlled current sink with precise gate threshold (0.8–2.0 V) for analog dimming interface. Use Value: Tight VGS(th) distribution ensures consistent turn-on across production units, reducing current calibration effort. | Use Scenario: Implements redundant 24 V input OR-ing in telecom power shelves with hot-swap capability. IC Role / Device Role / Timing Role: Serves as ideal diode replacement with bidirectional blocking (100 V VDS) and low forward drop (VSD ≤ 1.3 V). Use Value: Body diode forward voltage <1.3 V at 2 A cuts power loss by ~40% vs. discrete Schottky, improving system efficiency and thermal margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60Z | 600 V VDS, 1 A, RDS(on) = 12 Ω @ 10 V - higher voltage rating but significantly higher on-resistance | Designed for flyback snubber and HV auxiliary supplies, not low-voltage synchronous rectification | Select only if >100 V breakdown is required; unsuitable for 48 V systems due to excessive conduction loss |
| DMN2004LK-7 | 20 V VDS, 4.2 A, RDS(on) = 0.035 Ω @ 4.5 V - much lower voltage rating but superior low-VGS performance | Optimized for battery-powered portable devices and USB PD power paths | Prefer for ≤5 V rail applications; cannot replace BSP296E6327 in 24–48 V industrial systems due to VDS limitation |
Compared with STP1NK60Z and DMN2004LK-7, the BSP296E6327 uniquely balances 100 V breakdown, logic-level drive, and sub-1 Ω RDS(on) - making it optimal for 12–48 V industrial power stages where both voltage margin and efficiency matter.
Availability
BSP296E6327 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC synchronous rectification, and LED constant-current driver applications requiring stable component supply and long-term lifecycle support.
Supply support for BSP296E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The BSP296 belongs to Infineon's SIPMOS® small-signal transistor product line, engineered for logic-compatible switching in space-constrained industrial power supplies and motor drivers.
FAQ
Is BSP296E6327 suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage range of 0.8–2.0 V and guaranteed turn-on at VGS = 4.5 V, the BSP296E6327 achieves full enhancement using standard 3.3 V GPIO outputs. RDS(on) = 0.55 Ω typ at VGS = 4.5 V confirms strong channel conduction without external level shifting.
What is the maximum continuous drain current at 70 °C ambient?
At TA = 70 °C, the device is thermally limited to approximately 0.65 A continuous drain current. This is derived from the Ptot vs. TA curve (1.8 W at 25 °C, derating linearly to ~0.9 W at 70 °C) and RDS(on) = 0.8 Ω, yielding ID ≈ √(Ptot/RDS(on)) ≈ 0.65 A.
Does BSP296E6327 have avalanche rating?
No. The datasheet does not specify single-pulse or repetitive avalanche energy (EAS). It is rated for safe operating area (SOA) under resistive and inductive loads but lacks formal avalanche ruggedness certification - avoid operation beyond SOA limits in inductive switching.
Can the body diode be used for reverse current conduction in OR-ing applications?
Yes. The integrated body diode is rated for 1 A continuous and 4 A pulsed reverse current, with VSD = 0.95–1.3 V at IF = 2 A. Its forward characteristics and thermal robustness (Tj up to +150 °C) make it suitable for OR-ing in 24 V telecom and industrial power systems.
BSP296E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 700mOhm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 364 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.79W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP296E6327 FAQ
1.How can I place an order for BSP296E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP296E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP296E6327 reliable?
The price and inventory of BSP296E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP296E6327 is usually 5 days.
3.What payment methods are accepted for BSP296E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP296E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSP296E6327?
BSP296E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP296E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP296E6327?
For technical support, including BSP296E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP296E6327 requirements.
6.How does Aetrix verify that BSP296E6327 is sourced from the original manufacturer or authorized distributors?
All BSP296E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP296E6327 meets industry standards.
7.What is the process for return or replacement of BSP296E6327?
All BSP296E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSP296E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP296E6327 part is unused and in its original packaging.
Return procedure for BSP296E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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