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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSP296 E6433

Name: BSP296 E6433
Brand: Infineon Technologies
SKU: BSP296 E6433
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSP296 E6433

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: BSP296 E6433.pdf

Description:: MOSFET N-CH 100V 1.1A SOT223-4

Quantity:: RFQ Add To RFQ list

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Inventory:6,863

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Product details

Overview

BSP296 E6433 from Infineon Technologies is an N-channel logic-level enhancement-mode SIPMOS small-signal power MOSFET with V_DS = 100 V, R_DS(on) = 0.8 Ω @ V_GS = 10 V, and I_D = 1 A continuous. It features low gate threshold (V_GS(th) = 0.8–2.0 V), integrated body diode, and SOT-223 package-designed for DC-DC converter high-side switches and load switching in industrial control modules.

For engineers reviewing the BSP296 E6433 datasheet, BSP296 E6433 pinout, BSP296 E6433 application, or BSP296 E6433 equivalent, key selection criteria include logic-level drive compatibility, thermal resistance (R_thJA ≤ 70 K/W), drain-source breakdown voltage stability over temperature, and pulsed current capability (I_Dpuls = 4 A).

Technical Context

This MOSFET operates in enhancement mode with a silicon-based SIPMOS structure optimized for fast switching and low conduction loss at low gate drive voltages. Its gate threshold range (0.8–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic outputs, while its R_DS(on) remains stable across T_j = −55 °C to +150 °C.

Dynamic parameters-including C_iss = 300–400 pF, t_d(on) = 8–12 ns, and t_f = 65–85 ns-support efficient operation in 100–500 kHz switching applications. The integrated body diode exhibits V_SD = 0.95–1.3 V @ I_F = 2 A, enabling synchronous rectification and flyback recovery without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC with margin for transients in industrial power supplies
R_DS(on) @ V_GS = 10 V	0.8 Ω max - limits conduction loss to ≤0.8 W at 1 A DC, critical for thermally constrained PCB layouts
V_GS(th)	0.8–2.0 V - enables direct drive from microcontroller GPIOs without level-shifting circuitry
I_D (continuous)	1 A @ T_A = 42 °C - defines maximum steady-state load current on standard FR4 with minimal copper area
t_f	65–85 ns - determines minimum off-time in PWM control, supporting ≥1 MHz effective switching in burst mode
C_iss	300–400 pF - sets gate drive strength requirement: ~1.2 nC total gate charge at 10 V for <100 ns transition
P_tot	1.8 W @ T_A = 25 °C - establishes thermal derating curve; usable up to 1.0 W at 80 °C ambient with 40 mm × 40 mm copper pour

Pinout & Package

SOT-223 package with exposed drain pad for thermal conduction; 4-pin configuration (Pin 1: Gate, Pin 2: Drain, Pin 3: Source, Pin 4: Drain). Pins 2 and 4 are internally connected to the same drain metallization and must be soldered to a common thermal plane.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires ≤100 nA leakage current and 1.2 nC total gate charge for full enhancement
Pin 2	Drain	Main high-voltage current path; electrically and thermally tied to Pin 4 and exposed copper pad
Pin 3	Source	Reference node for gate drive and current sensing; connects to ground or low-side switch return path
Pin 4	Drain	Secondary drain connection; mandatory parallel routing with Pin 2 to reduce package inductance and thermal resistance

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 3.3 V or 5 V MCU outputs-eliminates need for gate driver ICs in space-constrained designs
Low R_DS(on) at 4.5 V	0.55 Ω max @ V_GS = 4.5 V-enables efficient 5 V rail switching in battery-powered IoT nodes
Integrated body diode	V_SD = 0.95 V typ @ 2 A-supports bidirectional current flow in H-bridge half-cells and reverse-polarity protection circuits
High-temperature operation	T_j rated to +150 °C-ensures reliability in sealed enclosures or near heat-generating components
ESD robustness	HBM Class 1 (≥2 kV)-reduces handling sensitivity during manual assembly and rework

Applications

Industrial Load Switching

DC-DC Converter High-Side Switch

Use Scenario: Remote-controlled 24 V solenoid actuation in PLC I/O modules with limited board space.

IC Role / Device Role / Timing Role: High-side power switch controlled by isolated digital output; handles 1 A resistive load with <10 µs turn-on latency.

Use Value: Logic-level gate eliminates level shifter, reducing BOM count; R_DS(on) < 0.8 Ω keeps self-heating below 1.2 °C/W on 2 cm² copper.

Use Scenario: 12 V to 5 V buck converter in factory automation sensor hubs operating at 300 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode; driven by controller's complementary PWM output.

Use Value: Body diode forward voltage (0.95 V) and low R_DS(on) cut conduction losses by 42% vs. discrete diode solution.

Reverse Polarity Protection

Motor Driver Half-Bridge Leg

Use Scenario: Input protection for 12 V/24 V field instruments subject to accidental reverse battery connection.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET configured as ideal diode; gate driven by charge pump derived from input rail.

Use Value: V_GS(th) ≤ 2.0 V ensures reliable enhancement even at cold-start 9 V input; R_DS(on) minimizes voltage drop (<0.8 V @ 1 A).

Use Scenario: 24 V brushed DC motor control in robotic joint actuators requiring bidirectional torque and stall current limiting.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; commutated at ≤20 kHz with dead-time control.

Use Value: Fast fall time (65–85 ns) and low C_oss (60–90 pF) reduce shoot-through risk and switching loss during direction reversal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60ZFP	V_DS = 600 V, R_DS(on) = 12 Ω @ 10 V, TO-92 package	Higher voltage rating but 15× higher R_DS(on); unsuitable for low-voltage, high-current loads	Select only when primary requirement is ultra-high V_DS with minimal current (<100 mA)
DMN2004LK-7	V_DS = 20 V, R_DS(on) = 0.045 Ω @ 4.5 V, SOT-23 package	Lower voltage rating and smaller package; cannot withstand 100 V transients or dissipate 1.8 W	Prefer for 3.3 V/5 V logic-driven loads ≤20 V and <500 mA where footprint is critical

Compared with STP1NK60ZFP and DMN2004LK-7, BSP296 E6433 uniquely balances 100 V blocking, sub-1 Ω R_DS(on), logic-level drive, and SOT-223 thermal capability-making it optimal for 12–48 V industrial switching where both voltage margin and conduction efficiency matter.

Availability

BSP296 E6433 is available at Aetrix Electronics and suitable for industrial load switching, DC-DC converter high-side switching, and reverse polarity protection requiring stable component supply and long-term lifecycle support.

Supply support for BSP296 E6433 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BSP296 belongs to Infineon's SIPMOS small-signal MOSFET product line, engineered for logic-compatible switching in space- and thermally-constrained industrial and automation equipment.

FAQ

What is the maximum safe gate-source voltage for BSP296 E6433?

The absolute maximum V_GS is ±20 V per datasheet ratings. Operation above ±12 V risks oxide damage, while sustained bias beyond ±15 V may cause irreversible gate degradation. For reliable 3.3 V or 5 V logic drive, no external gate resistor or Zener clamp is required-but transient suppression (e.g., 12 V TVS) is recommended in noisy industrial environments.

Can BSP296 E6433 replace a BSS138 in a 3.3 V I²C level-shifter circuit?

No-BSP296 E6433 is not suitable for I²C level shifting. Its R_DS(on) is too high for signal integrity at >100 kHz, and its capacitance (C_iss ≥ 300 pF) exceeds I²C bus capacitance limits. BSS138 offers <10 pF C_iss and 3.5 Ω R_DS(on) at 2.5 V, making it purpose-built for bidirectional signal translation.

Does BSP296 E6433 require a heatsink in typical SOT-223 mounting?

A dedicated heatsink is not required, but thermal performance depends on PCB layout. With 6 cm² of 2 oz copper connected to Pins 2 and 4, R_thJA drops to ≤45 K/W, allowing 1.0 W dissipation at 80 °C ambient. Without extended copper, derating to ≤0.6 W is necessary above 60 °C ambient per the P_tot vs. T_A curve.

Is the body diode in BSP296 E6433 rated for continuous conduction?

Yes-the integrated body diode supports I_S = 1 A continuous at T_A = 25 °C and I_SM = 4 A pulsed. Its V_SD = 0.95–1.3 V at 2 A ensures predictable forward drop in freewheeling paths, but reverse recovery time is not specified, so it is not recommended for high-frequency hard-switched diode replacement.

BSP296 E6433 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 700mOhm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 400µA

Gate Charge (Qg) (Max) @ Vgs:: 17.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 364 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.79W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-4

BSP296 E6433 FAQ

1.How can I place an order for BSP296 E6433 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP296 E6433 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP296 E6433 reliable?

The price and inventory of BSP296 E6433 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP296 E6433 is usually 5 days.

3.What payment methods are accepted for BSP296 E6433?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP296 E6433 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP296 E6433?

BSP296 E6433 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP296 E6433 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP296 E6433?

For technical support, including BSP296 E6433 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP296 E6433 requirements.

6.How does Aetrix verify that BSP296 E6433 is sourced from the original manufacturer or authorized distributors?

All BSP296 E6433 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP296 E6433 meets industry standards.

7.What is the process for return or replacement of BSP296 E6433?

All BSP296 E6433 units undergo pre-shipment inspection (PSI). If there is an issue with BSP296 E6433, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP296 E6433 part is unused and in its original packaging.

Return procedure for BSP296 E6433:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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