Infineon Technologies BSP298L6327HUSA1

Overview

BSP298L6327HUSA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS® small-signal power MOSFET rated for 400 V drain-source voltage, 0.5 A continuous drain current, and 3 Ω maximum R_DS(on) at V_GS = 10 V. It features avalanche capability, ±20 V gate-source rating, and is qualified to AEC-Q101 for automotive use in high-voltage switching circuits such as LED drivers and auxiliary power supplies.

For engineers reviewing the BSP298L6327HUSA1 datasheet, BSP298L6327HUSA1 pinout, BSP298L6327HUSA1 application, or BSP298L6327HUSA1 equivalent, key selection criteria include its 400 V V_DS, 2.1–4.0 V gate threshold range, 130 mJ single-pulse avalanche energy, and PG-SOT223 package thermal performance with R_thJA ≤ 70 K/W.

Technical Context

This MOSFET operates in enhancement mode with a silicon-based SIPMOS® structure optimized for fast switching and robust unclamped inductive switching (UIS) performance. Its transconductance (g_fs) of 0.5–1.2 S and low output capacitance (C_oss = 50–75 pF) support efficient operation in 30–100 kHz switching topologies.

The device integrates an intrinsic body diode with 0.95–1.2 V forward voltage at 1 A and 300 ns reverse recovery time, enabling synchronous rectification or freewheeling roles without external diodes in low-power DC-DC converters and relay drivers.

Key Specifications

Pinout & Package

Package: PG-SOT223 (4-pin variant with dual drain terminals), surface-mount, RoHS-compliant, Pb-free plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 400 V small-signal MOSFET applications.

Compared with STP1NK60ZFP and IRF640NPBF, BSP298L6327HUSA1 uniquely balances 400 V capability, AEC-Q101 compliance, SOT223 thermal efficiency, and logic-level drive-making it optimal for space-constrained, automotive-grade 12–24 V switching where voltage margin and reliability are critical.

Availability

BSP298L6327HUSA1 is available at Aetrix Electronics and suitable for automotive interior lighting, industrial relay drivers, LED driver circuits, and AC/DC auxiliary power supplies requiring stable component supply and long-term lifecycle assurance.

Supply support for BSP298L6327HUSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BSP298 belongs to Infineon's SIPMOS® small-signal MOSFET product line, designed specifically for reliable, high-voltage switching in automotive and industrial environments where avalanche ruggedness and AEC-Q101 compliance are essential.

FAQ

What is the maximum safe operating voltage for BSP298L6327HUSA1 in continuous DC operation?

The absolute maximum drain-source voltage (V_DS) is 400 V under all conditions per datasheet Rev. 2.5. For reliable long-term operation, design should maintain V_DS ≤ 320 V in DC applications to provide 20% derating margin against transients and temperature-induced drift. At T_j = 150 °C, V_(BR)DSS drops to ~385 V, confirming the 320 V design limit.

Can BSP298L6327HUSA1 be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(th)) ranges from 2.1 V to 4.0 V, and R_DS(on) remains ≤3 Ω at V_GS = 3.3 V (typical 2.6 Ω per curve data). Full enhancement occurs at ~4.5 V, so 3.3 V drive yields ~80% of rated current capability, sufficient for 0.4 A loads with acceptable conduction loss.

Does BSP298L6327HUSA1 require an external flyback diode when switching inductive loads?

No - it includes an integrated body diode with 0.5 A continuous forward current rating and 2 A pulsed capability. The diode's 300 ns reverse recovery time and 2.5 µC Q_rr are suitable for ≤100 kHz switching; however, for high-efficiency or high-frequency (>50 kHz) freewheeling, an external Schottky may still be preferred to reduce losses.

What is the thermal resistance from junction to ambient (R_thJA) for BSP298L6327HUSA1 on a standard PCB?

R_thJA is ≤70 K/W when mounted on a 40 mm × 40 mm × 1.5 mm FR4 board with 6 cm² copper area connected to the drain pins (Pins 2 & 4). This value assumes natural convection only; adding forced airflow or thermal vias can reduce it further. Junction temperature must stay ≤150 °C for rated lifetime per AEC-Q101 stress testing.