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Infineon Technologies BSP299 E6327

Part No.:
BSP299 E6327
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBSP299 E6327.pdf
Description:
MOSFET N-CH 500V 400MA SOT223-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,876

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Product details

Overview

BSP299 E6327 from Infineon Technologies is an N-channel enhancement-mode SIPMOS® small-signal power MOSFET rated for 500 V drain-source voltage, 0.4 A continuous drain current, and 4 Ω RDS(on) at VGS = 10 V. It features avalanche energy rating (130 mJ), AEC-Q101 Class 1b qualification, and integrated body diode with 0.9–1.2 V forward voltage - deployed in automotive LED lighting drivers and industrial auxiliary power supply switches.

For engineers reviewing the BSP299 E6327 datasheet, BSP299 E6327 pinout, BSP299 E6327 application, or BSP299 E6327 equivalent, key selection criteria include its 500 V blocking capability, 1.8 W power dissipation at 25 °C, ±20 V gate-source voltage tolerance, -55 to +150 °C operating temperature range, and SOT-223 package thermal resistance (RthJA ≤ 70 K/W).

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage of 2.1–4.0 V, enabling reliable turn-on control in low-power switching circuits. Its avalanche-rated construction supports unclamped inductive switching events without failure, critical for relay replacement and solenoid drive applications.

The device integrates a fast-recovery body diode (trr = 300 ns, Qrr = 2.5 µC) and exhibits dynamic parameters including Ciss = 300–400 pF and gfs = 0.3–1.2 S, supporting efficient high-frequency PWM operation up to several hundred kHz in DC-DC auxiliary rails.

Key Specifications

ParameterValue and Actual Design Meaning
VDS500 V - supports primary-side switching in 24–48 V industrial systems with 2× safety margin against transients
ID (continuous)0.4 A - suitable for low-current load switching such as status indicators, sensor biasing, and fan control
RDS(on)3.1–4 Ω @ VGS = 10 V - ensures <160 mW conduction loss at full rated current, minimizing self-heating
EAS130 mJ - enables robust operation in inductive load switching without external snubbers
Tj range-55 to +150 °C - qualified for under-hood automotive environments and industrial enclosures
RthJA≤ 70 K/W - requires ≥6 cm² copper pour on PCB for thermal compliance at full power
VGS(th)2.1–4.0 V - compatible with 3.3 V and 5 V logic-level gate drivers without level-shifting

Pinout & Package

SOT-223 package with exposed drain tab for thermal conduction and mechanical stability. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (redundant connection).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl terminal; accepts 0–10 V logic signal; requires ≤20 V absolute max to avoid oxide damage
Pin 2DrainMain high-side current path; electrically and thermally connected to exposed pad; ties to HV rail
Pin 3SourceReference node for gate drive; connects to ground or low-side return path
Pin 4Drain (duplicate)Secondary drain connection enhancing thermal transfer and current sharing in PCB layout

Key Features

FeatureDesign Value
Avalanche energy rating130 mJ single-pulse - eliminates need for external clamping in relay/solenoid driver designs
AEC-Q101 Class 1b qualificationValidated for automotive electronics per stress test requirements - supports under-dash and lighting modules
Body diode recoverytrr = 300 ns, Qrr = 2.5 µC - reduces switching losses and EMI in flyback auxiliary supplies
Pb-free & RoHS compliantLead-free plating and halogen-free packaging - meets global environmental compliance mandates
Thermal resistanceRthJS ≤ 25 K/W - enables direct soldering to heatsink via exposed drain pad

Applications

Automotive LED Headlamp SwitchingIndustrial Auxiliary Power Supply

Use Scenario: High-side switching of 12–48 V LED strings in adaptive front-lighting systems (AFS).

IC Role / Device Role / Timing Role: N-channel MOSFET used as controlled current sink with PWM dimming at 1–10 kHz.

Use Value: Avalanche rating absorbs inductive kickback from LED driver inductors; 500 V rating accommodates load dump transients up to ISO 7637-2 Pulse 5a.

Use Scenario: Secondary-side synchronous rectifier or bias supply switch in isolated DC-DC converters.

IC Role / Device Role / Timing Role: Low-duty-cycle high-voltage switch controlling 24 V auxiliary rail startup sequencing.

Use Value: 0.4 A rating and 4 Ω RDS(on) limit standby losses; SOT-223 footprint allows compact layout near transformer secondary.

Smart Building Relay ReplacementMedical Equipment Status Indicator

Use Scenario: Solid-state replacement for electromechanical relays in HVAC zone controllers and lighting panels.

IC Role / Device Role / Timing Role: Low-power load switch driving resistive/inductive loads up to 20 W.

Use Value: 130 mJ avalanche energy handles coil de-energization without snubber; AEC-Q101 grade ensures long-term reliability in 24/7 operation.

Use Scenario: Isolated status signaling in patient-connected devices requiring reinforced insulation and low leakage.

IC Role / Device Role / Timing Role: Logic-controlled enable switch for LED indicators powered from isolated 5 V rails.

Use Value: IDSS ≤ 100 nA at 125 °C ensures negligible standby current; RoHS/Pb-free compliance supports medical regulatory submissions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V small-signal MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP2NK50Z500 V, 2 A, RDS(on) = 4.5 Ω, TO-92 package, no AEC-Q101Higher current rating but larger footprint and no automotive qualificationSelect when higher ID is required and board space permits TO-92; not recommended for automotive use
IRF640NPBF500 V, 18 A, RDS(on) = 0.18 Ω, TO-220 package, no avalanche ratingDesigned for high-power linear/switching use; lacks EAS spec and AEC-Q101Choose only for non-automotive, high-current applications where thermal mass offsets lack of avalanche ruggedness

Compared with STP2NK50Z and IRF640NPBF, the BSP299 E6327 uniquely combines AEC-Q101 qualification, 130 mJ avalanche energy, and SOT-223 thermal performance - making it optimal for space-constrained, mission-critical automotive and industrial switching where reliability under transient stress is mandatory.

Availability

BSP299 E6327 is available at Aetrix Electronics and suitable for automotive LED lighting, industrial auxiliary power supplies, smart building relay replacements, and medical equipment status indicators requiring stable component supply across extended product lifecycles.

Supply support for BSP299 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

The BSP299 belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered for high-voltage, low-current switching in automotive and industrial environments where ruggedness, qualification, and thermal efficiency are prioritized over raw current handling.

FAQ

What is the maximum gate-source voltage for BSP299 E6327?

The absolute maximum gate-source voltage is ±20 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 0–10 V during normal switching, with transient spikes clamped below ±15 V using Zener protection or gate resistors.

Does BSP299 E6327 have an integrated body diode?

Yes - it includes a monolithic body diode with typical forward voltage of 0.9–1.2 V at 0.8 A and reverse recovery time of 300 ns. This diode supports freewheeling in inductive loads but is not optimized for high-frequency synchronous rectification.

Is BSP299 E6327 suitable for surface-mount reflow assembly?

Yes - it uses standard SOT-223 leadframe construction with Pb-free (RoHS-compliant) plating, qualified for JEDEC J-STD-020D reflow profiles. Peak temperature must not exceed 260 °C for ≤30 seconds, and thermal pad must be fully soldered for RthJA compliance.

How does the avalanche rating impact circuit design?

The 130 mJ single-pulse avalanche energy rating allows the device to safely absorb inductive energy during unclamped switching events - reducing or eliminating snubber components in relay/solenoid drivers. Designers must verify that actual EAS demand (½·L·I²) stays within this limit at worst-case Tj.

BSP299 E6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223-4-21

BSP299 E6327 FAQ

1.How can I place an order for BSP299 E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP299 E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP299 E6327 reliable?

The price and inventory of BSP299 E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP299 E6327 is usually 5 days.

3.What payment methods are accepted for BSP299 E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP299 E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP299 E6327?

BSP299 E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP299 E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP299 E6327?

For technical support, including BSP299 E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP299 E6327 requirements.

6.How does Aetrix verify that BSP299 E6327 is sourced from the original manufacturer or authorized distributors?

All BSP299 E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP299 E6327 meets industry standards.

7.What is the process for return or replacement of BSP299 E6327?

All BSP299 E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSP299 E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP299 E6327 part is unused and in its original packaging.

Return procedure for BSP299 E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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