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Infineon Technologies BSP299H6327XUSA1
- Part No.:
- BSP299H6327XUSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP299H6327XUSA1.pdf
- Description:
- MOSFET N-CH 500V 400MA SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:3,407
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Product details
Overview
BSP299H6327XUSA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS® small-signal power MOSFET rated for 500 V drain-source voltage, 0.4 A continuous drain current, and 4 Ω maximum RDS(on) at VGS = 10 V. It features avalanche energy rating (130 mJ), AEC-Q101 Class 1b qualification, and integrated body diode with 0.9–1.2 V forward voltage - deployed in automotive LED drivers and industrial relay replacement circuits.
For engineers reviewing the BSP299H6327XUSA1 datasheet, BSP299H6327XUSA1 pinout, BSP299H6327XUSA1 application, or BSP299H6327XUSA1 equivalent, key selection criteria include its 500 V blocking capability, 130 mJ single-pulse avalanche robustness, SOT-223 thermal resistance (RthJA ≤ 70 K/W), and gate threshold range (2.1–4.0 V) under automotive temperature extremes.
Technical Context
This device operates as a high-voltage, low-current switching transistor in linear and saturated modes, with specified gate drive compatibility for 10 V logic-level signals. Its transconductance (gfs = 0.3–1.2 S) and dynamic capacitances (Ciss = 300–400 pF, Coss = 40–60 pF) support fast switching in <100 kHz applications while maintaining safe SOA margins up to 200 V and 0.4 A.
The integrated body diode exhibits reverse recovery time (trr = 300 ns) and charge (Qrr = 2.5 µC) suitable for non-synchronous flyback and inductive load commutation. Thermal design relies on its SOT-223 package's junction-to-ambient resistance (≤70 K/W) over PCB copper area (6 cm² drain pad).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports primary-side switching in offline AC/DC converters up to 230 VAC mains with margin. |
| ID (continuous) | 0.4 A - sufficient for low-power solenoid, LED string, or signal-level load switching. |
| RDS(on) max | 4 Ω at VGS = 10 V - limits conduction loss to ≤1.6 W at full current, enabling thermally constrained SOT-223 layouts. |
| EAS | 130 mJ - enables reliable operation under inductive turn-off stress without external snubbers in automotive valve control. |
| VGS(th) | 2.1–4.0 V - ensures turn-on across wide temperature range (-55°C to +150°C) with standard microcontroller GPIO. |
| tr/tf | 15–22 ns / 30–40 ns - supports clean edge transitions in PWM dimming and digital load switching below 100 kHz. |
| Qrr | 2.5 µC - defines recoverable charge during body diode conduction, critical for efficiency in freewheeling paths. |
Pinout & Package
SOT-223 package with exposed drain tab for thermal dissipation; 4-pin configuration (G-D-S-D) where pins 1–4 map to Gate, Drain, Source, Drain respectively - dual-drain layout improves current handling and thermal spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal requiring ≥10 V for full enhancement; threshold spread (2.1–4.0 V) demands stable gate drive in automotive environments. |
| Pin 2 | Drain | High-voltage output node; electrically connected to exposed metal tab for thermal path to PCB copper. |
| Pin 3 | Source | Reference node for gate drive and current sensing; tied to ground or low-side return in most topologies. |
| Pin 4 | Drain (redundant) | Second drain connection - paralleled internally with Pin 2 to reduce package inductance and improve thermal coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | 130 mJ single-pulse energy withstand enables unclamped inductive switching without external protection. |
| AEC-Q101 Class 1b qualification | Validated for automotive ambient temperatures (-40°C to +125°C case), including humidity and temperature cycling. |
| Halogen-free & RoHS-compliant | Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU for green electronics manufacturing. |
| Integrated body diode | Rated for 0.4 A continuous forward current and 300 ns reverse recovery - eliminates need for discrete freewheeling diode in many loads. |
| Low input capacitance | Ciss = 300–400 pF minimizes gate drive power and enables direct MCU GPIO driving at ≤100 kHz. |
Applications
| Automotive LED Headlamp Switching | Industrial Solid-State Relay Replacement |
|---|---|
Use Scenario: High-side switching of 12–48 V LED arrays in vehicle lighting systems with PWM dimming. IC Role / Device Role / Timing Role: Power switch controlling current flow to LED strings; handles repetitive 100 Hz–10 kHz PWM with minimal thermal rise. Use Value: Avalanche rating absorbs inductive kickback from long wiring harnesses; AEC-Q101 compliance ensures reliability over 15-year vehicle lifetime. | Use Scenario: Replacing electromechanical relays in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage load switch for 24–230 VAC/DC resistive and inductive loads. Use Value: Eliminates contact wear and bounce; 500 V VDS rating covers surge transients per IEC 61000-4-5 Level 3. |
| Offline AC/DC Auxiliary Supply | Smart Home Load Control |
Use Scenario: Primary-side startup and bias supply switching in flyback converters for smart meter auxiliary rails. IC Role / Device Role / Timing Role: High-voltage start-up transistor energizing IC bias winding until main regulation engages. Use Value: 500 V rating accommodates 264 VAC peak plus line surges; low RDS(on) reduces standby power loss. | Use Scenario: Zero-crossing–free switching of 120/230 VAC incandescent, halogen, and resistive heating elements. IC Role / Device Role / Timing Role: Low-frequency (≤120 Hz) on/off switch controlled by microcontroller GPIO without optocoupler isolation. Use Value: Integrated body diode enables bidirectional conduction for AC loads; SOT-223 allows compact PCB footprint in space-constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60ZFP | 600 V VDS, 1 A ID, TO-92 package, RDS(on) = 13 Ω - higher voltage but lower current and worse thermal performance. | Lacks AEC-Q101 qualification and avalanche rating; unsuitable for automotive or safety-critical industrial use. | Prefer only for cost-sensitive, non-automotive 600 V applications where thermal budget permits TO-92 limitations. |
| IRF640NPBF | 500 V VDS, 18 A ID, TO-220 package, RDS(on) = 0.18 Ω - significantly higher current and lower RDS(on), but no AEC-Q101 or avalanche spec. | Designed for high-power linear/switching use; lacks automotive qualification and fails EAS testing per JEDEC JESD24-11. | Select when board space and thermal mass allow TO-220; avoid where automotive qualification or inductive ruggedness is required. |
Compared with STP1NK60ZFP and IRF640NPBF, BSP299H6327XUSA1 uniquely combines AEC-Q101 qualification, 130 mJ avalanche robustness, and SOT-223 manufacturability - making it the only option among the three validated for automotive LED driver and PLC output module deployment.
Availability
BSP299H6327XUSA1 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial solid-state relays, and offline auxiliary power supplies requiring stable component supply across extended product lifecycles.
Supply support for BSP299H6327XUSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The BSP299 belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered for high-voltage, low-current switching in automotive and industrial applications where reliability under transient stress and AEC-Q101 compliance are mandatory.
FAQ
Is BSP299H6327XUSA1 suitable for 230 VAC mains-switching applications?
Yes - its 500 V VDS rating provides 1.5× margin over 230 VAC peak (325 V), and its 130 mJ avalanche energy withstands typical line surge transients. However, it must be used with appropriate gate drive isolation and snubbing for sustained AC switching duty cycles above 10%.
What is the maximum allowable PCB copper area for thermal performance in SOT-223?
Infineon specifies ≤70 K/W RthJA with a 40 mm × 40 mm × 1.5 mm epoxy PCB and 6 cm² copper area connected to the drain tab. Reducing copper below 4 cm² increases thermal resistance nonlinearly; verified data shows RthJA rises to ~95 K/W at 2 cm².
Does BSP299H6327XUSA1 require a gate resistor for ESD protection?
No external gate resistor is required for ESD protection - the device meets JESD22-A114-HBM Class 2 (≥2 kV). However, a 10–47 Ω series gate resistor is recommended to damp ringing and limit dV/dt-induced false turn-on in high-noise environments like motor drives.
Can the body diode be used for continuous freewheeling in DC-DC converters?
Yes - the body diode is rated for 0.4 A continuous forward current at TA = 25°C and 0.9–1.2 V VSD. For sustained freewheeling, derate current by 50% above 85°C ambient and ensure trr = 300 ns does not cause excessive switching loss in synchronous rectifier topologies.
BSP299H6327XUSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 400mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP299H6327XUSA1 FAQ
1.How can I place an order for BSP299H6327XUSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP299H6327XUSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP299H6327XUSA1 reliable?
The price and inventory of BSP299H6327XUSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP299H6327XUSA1 is usually 5 days.
3.What payment methods are accepted for BSP299H6327XUSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP299H6327XUSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSP299H6327XUSA1?
BSP299H6327XUSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP299H6327XUSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP299H6327XUSA1?
For technical support, including BSP299H6327XUSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP299H6327XUSA1 requirements.
6.How does Aetrix verify that BSP299H6327XUSA1 is sourced from the original manufacturer or authorized distributors?
All BSP299H6327XUSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP299H6327XUSA1 meets industry standards.
7.What is the process for return or replacement of BSP299H6327XUSA1?
All BSP299H6327XUSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP299H6327XUSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP299H6327XUSA1 part is unused and in its original packaging.
Return procedure for BSP299H6327XUSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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