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Infineon Technologies BSP300H6327XUSA1

Part No.:
BSP300H6327XUSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBSP300H6327XUSA1.pdf
Description:
MOSFET N-CH 800V 190MA SOT223-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,935

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Product details

Overview

BSP300H6327XUSA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS® small-signal power MOSFET rated for 800 V drain-source voltage, 0.19 A continuous drain current, and 20 Ω RDS(on) at VGS = 10 V. It features avalanche capability (EAS = 36 mJ), ±20 V gate-source rating, and operates from −55 °C to +150 °C junction temperature. Used in high-voltage flyback snubber circuits and auxiliary power supplies.

For engineers reviewing the BSP300H6327XUSA1 datasheet, BSP300H6327XUSA1 pinout, BSP300H6327XUSA1 application, or BSP300H6327XUSA1 equivalent, key selection criteria include its 800 V VDS, 20 Ω RDS(on), SOT-223 package thermal resistance (RthJA ≤ 70 K/W), avalanche energy rating, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This device is a single N-channel silicon-based power MOSFET with enhancement-mode operation and integrated body diode. Its gate threshold voltage range (2.0–4.0 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers while maintaining robust noise immunity at high-voltage nodes.

The SIPMOS® process delivers low gate charge (Qg not specified but inferred from Ciss = 170–230 pF), fast switching (td(on) = 7–11 ns, tf = 21–28 ns), and stable RDS(on) over temperature (20 Ω max at 25 °C, rising to ~40 Ω at 150 °C). It supports unidirectional high-voltage switching with built-in avalanche ruggedness for inductive load handling.

Key Specifications

ParameterValue and Actual Design Meaning
VDS800 V - Supports primary-side switching in offline flyback converters up to 265 V AC mains with safety margin.
ID (continuous)0.19 A - Suitable for low-power auxiliary supplies (<10 W) and bias windings in SMPS.
RDS(on)20 Ω max at VGS = 10 V - Defines conduction loss of ≤360 mW at full current; impacts thermal design on SOT-223 PCB pad.
EAS36 mJ - Enables reliable single-pulse inductive energy absorption without failure in snubber or relay drive applications.
Tj range−55 °C to +150 °C - Qualified for under-hood automotive environments and industrial control enclosures.
RthJA≤70 K/W - Requires ≥6 cm² copper pour on drain-connected layer for 1.8 W dissipation at ambient 25 °C.
VGS(th)2.0–4.0 V - Ensures turn-on with standard microcontroller GPIOs; avoids unintended conduction near 0 V.

Pinout & Package

Package: PG-SOT223 (standard SOT-223 outline with exposed drain tab); RoHS-compliant, halogen-free, tape-and-reel packaging (H6327 designation).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1Gate (G)Control terminal; accepts 0–20 V signal; requires external gate resistor to limit dV/dt-induced ringing.
Pin 2Drain (D)High-voltage output node; electrically connected to exposed metal tab; must be soldered to large copper area for thermal management.
Pin 3Source (S)Reference node for gate drive and current return path; ties to ground or low-side switch node.
Pin 4Drain (D)Second drain connection; paralleled with Pin 2 to reduce package inductance and improve current sharing in high-dI/dt switching.

Key Features

FeatureDesign Value
Avalanche-rated operationGuarantees single-pulse ruggedness up to 36 mJ, eliminating need for external clamping in low-energy inductive loads.
AEC-Q101 qualifiedValidated for automotive electronics per stress test requirements, including temperature cycling and HTRB.
SIPMOS® technologyDelivers stable RDS(on) vs. temperature and reduced gate charge compared to standard planar MOSFETs.
Integrated body diodeEnables freewheeling in flyback/boost topologies; VSD = 1.0–1.4 V at 0.38 A supports efficient reverse recovery.
Halogen-free & RoHSComplies with IEC61249-2-21 and EU RoHS Directive for environmentally constrained end equipment.

Applications

AC-DC Auxiliary Power SupplyFlyback Snubber Circuit

Use Scenario: Provides isolated 12 V bias supply for PWM controllers in offline SMPS.

IC Role / Device Role / Timing Role: High-side switch in discontinuous conduction mode (DCM) flyback converter operating at 65–100 kHz.

Use Value: 800 V rating ensures margin against reflected transients; 20 Ω RDS(on) limits conduction loss to <400 mW at 0.19 A.

Use Scenario: Clamps voltage spikes across transformer leakage inductance during MOSFET turn-off.

IC Role / Device Role / Timing Role: Active clamp switch triggered synchronously with main power MOSFET to recycle energy.

Use Value: Avalanche capability absorbs 36 mJ pulse energy without degradation; fast tf ≤ 28 ns minimizes clamp duration.

Automotive HVAC Blower ControlIndustrial Relay Driver

Use Scenario: Drives low-current blower motor pre-driver stage in climate control modules.

IC Role / Device Role / Timing Role: Low-duty-cycle high-voltage switch enabling PWM-controlled fan speed via optocoupled feedback.

Use Value: AEC-Q101 qualification ensures reliability at 125 °C ambient; Tj = 150 °C rating supports sealed enclosure operation.

Use Scenario: Interfaces PLC output to 24 V DC coil relays in factory automation panels.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical contacts; handles inductive kickback during de-energization.

Use Value: EAS = 36 mJ safely dissipates relay coil energy (typically <15 mJ); RDS(on) stability prevents thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP3NK80ZFP800 V, 3.0 A, 4.5 Ω RDS(on), TO-220FP package, no AEC-Q101Higher current capacity but larger footprint and no automotive qualificationSelect when higher ID and lower RDS(on) are required and space allows TO-220 mounting.
IXTP1R1N80P800 V, 1.1 A, 11 Ω RDS(on), TO-220 package, no AEC-Q101Lower RDS(on) and higher ID, but lacks avalanche rating and automotive qualificationPrefer for non-automotive 800 V switching where conduction loss dominates and snubber energy is externally managed.

Compared with STP3NK80ZFP and IXTP1R1N80P, BSP300H6327XUSA1 trades current capacity and RDS(on) for compact SOT-223 packaging, guaranteed avalanche ruggedness, and AEC-Q101 compliance-making it optimal for space-constrained, reliability-critical 0.19 A high-voltage switching.

Availability

BSP300H6327XUSA1 is available at Aetrix Electronics and suitable for AC-DC auxiliary power supplies, flyback snubber circuits, and automotive HVAC blower control requiring stable component supply across extended product lifecycles.

Supply support for BSP300H6327XUSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BSP300 belongs to Infineon's SIPMOS® small-signal power MOSFET product line, designed specifically for high-voltage, low-current switching in space-constrained and reliability-sensitive applications such as auxiliary power and automotive subsystems.

FAQ

Is BSP300H6327XUSA1 suitable for 230 V AC input rectified applications?

Yes. With an 800 V VDS rating and 20 % safety margin above peak rectified voltage (~325 V), it supports direct switching in universal-input offline flyback converters. Its avalanche rating further protects against transient overvoltage events common in unregulated AC lines.

What is the maximum gate resistor value recommended for reliable switching?

A gate resistor of 10–47 Ω is recommended to balance switching speed and gate oscillation suppression. Values >68 Ω increase td(on)/td(off) beyond datasheet specs (7–11 ns / 27–36 ns), risking shoot-through in half-bridge configurations or excessive switching loss.

Does the SOT-223 package require thermal vias for 1.8 W operation?

Yes. To maintain Tj ≤ 150 °C at 1.8 W, the exposed drain tab must connect to ≥6 cm² of 2 oz copper with ≥4 thermal vias (0.3 mm diameter) to inner ground planes. Without this, junction temperature exceeds safe limits even at 25 °C ambient.

Can BSP300H6327XUSA1 replace a BUK9Y11-80B in automotive lighting?

No. While both are 80 V-class N-channel MOSFETs, BUK9Y11-80B is a logic-level 80 V device (RDS(on) = 11 mΩ), whereas BSP300H6327XUSA1 is an 800 V, 20 Ω part. Their voltage classes, RDS(on), and gate thresholds are incompatible for direct substitution in 12 V automotive lighting loads.

BSP300H6327XUSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
20Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
230 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223-4

BSP300H6327XUSA1 FAQ

1.How can I place an order for BSP300H6327XUSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP300H6327XUSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP300H6327XUSA1 reliable?

The price and inventory of BSP300H6327XUSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP300H6327XUSA1 is usually 5 days.

3.What payment methods are accepted for BSP300H6327XUSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP300H6327XUSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP300H6327XUSA1?

BSP300H6327XUSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP300H6327XUSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP300H6327XUSA1?

For technical support, including BSP300H6327XUSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP300H6327XUSA1 requirements.

6.How does Aetrix verify that BSP300H6327XUSA1 is sourced from the original manufacturer or authorized distributors?

All BSP300H6327XUSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP300H6327XUSA1 meets industry standards.

7.What is the process for return or replacement of BSP300H6327XUSA1?

All BSP300H6327XUSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP300H6327XUSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP300H6327XUSA1 part is unused and in its original packaging.

Return procedure for BSP300H6327XUSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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