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Infineon Technologies BSP300L6327HUSA1

Part No.:
BSP300L6327HUSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBSP300L6327HUSA1.pdf
Description:
MOSFET N-CH 800V 190MA SOT223-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,551

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Product details

Overview

BSP300L6327HUSA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS® small-signal transistor rated for 800 V drain-source breakdown voltage, 0.19 A continuous drain current, and 20 Ω RDS(on) at VGS = 10 V. It features avalanche energy rating (36 mJ), ±20 V gate-source voltage tolerance, and operates across –55 °C to +150 °C junction temperature - used in high-voltage flyback snubber circuits and offline AC-DC auxiliary power supplies.

For engineers reviewing the BSP300L6327HUSA1 datasheet, BSP300L6327HUSA1 pinout, BSP300L6327HUSA1 application, or BSP300L6327HUSA1 equivalent, key selection criteria include its 800 V V(BR)DSS, 2.0–4.0 V gate threshold range, 1.8 W power dissipation at 25 °C, avalanche ruggedness, and PG-SOT223 package thermal performance.

Technical Context

This device implements a planar SIPMOS® structure optimized for high-voltage switching with controlled transconductance (gfs = 0.06–0.27 S) and low output capacitance (Coss = 20–30 pF). Its gate threshold voltage (2.0–4.0 V) enables direct drive from 3.3 V or 5 V logic with margin against spurious turn-on.

The integrated body diode supports unidirectional freewheeling with VSD = 1.0–1.4 V at 0.38 A and trr = 95 ns, while RthJA ≤ 70 K/W ensures thermal stability on standard 40 mm × 40 mm PCBs with 6 cm² copper pour.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS800 V - Withstands 800 V drain-source blocking voltage before avalanche onset, enabling use in 600 V-class mains-connected circuits with safety margin.
ID (continuous)0.19 A - Maximum DC current at TA = 25 °C; derates to zero at ~120 °C ambient per published curve.
RDS(on)15–20 Ω - On-resistance at VGS = 10 V and ID = 0.19 A; defines conduction loss in linear or switching operation.
EAS36 mJ - Single-pulse avalanche energy rating at Tj = 25 °C; validates robustness against inductive switching stress.
VGS(th)2.0–4.0 V - Gate threshold range ensures reliable turn-on with 3.3 V/5 V controllers while rejecting noise below 2 V.
Ciss170–230 pF - Input capacitance at VDS = 25 V; determines gate drive strength requirement and switching speed trade-off.
Ptot1.8 W - Total power dissipation at TA = 25 °C; sets thermal design baseline for heatsinking or layout.

Pinout & Package

Package: PG-SOT223 (standardized JEDEC TO-261AA variant with exposed drain pad for thermal conduction).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1Gate (G)Control terminal; requires <20 V absolute max; threshold activation begins at ≥2.0 V.
Pin 2Drain (D)High-voltage power input/output node; electrically connected to exposed tab for thermal path.
Pin 3Source (S)Reference node for gate drive and current return; tied to ground or low-side switch node.
Pin 4Drain (D)Second drain connection - paralleled with Pin 2 to reduce package inductance and improve thermal spreading.

Key Features

FeatureDesign Value
Avalanche-rated operation36 mJ single-pulse EAS validated per JEDEC JESD22-A114-HBM Class 1a - eliminates need for external clamping in inductive load switching.
High-voltage blocking800 V V(BR)DSS with <±0.5 %/°C tempco - maintains safe margin above 650 V rectified mains peaks.
Thermal robustnessRthJA ≤ 70 K/W on 40 mm × 40 mm PCB with 6 cm² copper - enables compact layout without forced air or heatsink in low-power aux supplies.
Logic-level compatible gateVGS(th) min = 2.0 V - ensures full enhancement with 3.3 V microcontroller GPIO or optocoupler outputs.

Applications

AC-DC Auxiliary Power SupplyFlyback Snubber Circuit

Use Scenario: Provides primary-side switching in <5 W offline auxiliary supplies powering control ICs and bias rails.

IC Role / Device Role / Timing Role: High-voltage MOSFET switch operating in discontinuous conduction mode (DCM) at 65–100 kHz.

Use Value: 800 V rating accommodates 265 VAC input surges; 36 mJ EAS absorbs leakage inductance spikes without external TVS.

Use Scenario: Clamps voltage overshoot across main power MOSFET during turn-off in flyback converters.

IC Role / Device Role / Timing Role: Passive snubber switch activated by reflected voltage spike, not actively driven.

Use Value: Avalanche capability sustains repeated 50–100 V transients without degradation; low Coss minimizes snubber losses.

Isolated Gate Driver BiasHigh-Voltage Sensor Interface

Use Scenario: Generates isolated +12 V or +15 V bias for IGBT or SiC gate drivers in industrial inverters.

IC Role / Device Role / Timing Role: Linear regulator pass element or self-oscillating flyback switch.

Use Value: 150 °C max junction temperature allows placement near hot power stages; RDS(on) stability over temperature ensures consistent regulation.

Use Scenario: Level-shifts and isolates high-side voltage sense signals in battery management or HV DC link monitoring.

IC Role / Device Role / Timing Role: High-impedance voltage divider switch enabling periodic sampling of >400 V nodes.

Use Value: 800 V V(BR)DSS and low IDSS (<100 nA at 125 °C) preserve measurement accuracy under sustained HV bias.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage small-signal MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP3NK80ZFP800 V V(BR)DSS, 3 A ID, 3.5 Ω RDS(on), TO-220FP packageHigher current handling but larger footprint and higher gate charge - unsuitable for space-constrained aux supplies.Select when >0.5 A continuous current or lower RDS(on) is required; verify thermal interface for TO-220FP mounting.
IXTP01N800800 V V(BR)DSS, 0.15 A ID, 25 Ω RDS(on), TO-92 packageSame voltage class but lower current and no avalanche rating - limited to non-inductive or low-energy switching.Choose only for ultra-low-cost, non-avalanche-critical signal switching; avoid in snubber or flyback roles.

Compared with STP3NK80ZFP and IXTP01N800, BSP300L6327HUSA1 uniquely balances 800 V rating, avalanche ruggedness, SOT223 thermal efficiency, and logic-level gate drive - making it optimal for compact, reliable auxiliary power stages where size and transient immunity are co-constrained.

Availability

BSP300L6327HUSA1 is available at Aetrix Electronics and suitable for AC-DC auxiliary power supplies, flyback snubber circuits, isolated gate driver bias rails, and high-voltage sensor interfaces requiring stable component supply and long-term industrial availability.

Supply support for BSP300L6327HUSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BSP300 belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered for high-voltage, low-power switching applications demanding avalanche robustness, thermal reliability, and compatibility with standard logic-level drivers.

FAQ

What is the maximum gate-source voltage for BSP300L6327HUSA1?

The absolute maximum gate-source voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Designers must ensure gate drive circuits limit VGS to ≤20 V during transients, including ringing or undershoot, using clamping diodes or resistor-divider networks where necessary.

Does BSP300L6327HUSA1 have an integrated body diode?

Yes, it includes a monolithic parasitic body diode with forward voltage VSD = 1.0–1.4 V at 0.38 A and reverse recovery time trr = 95 ns. This diode supports freewheeling in flyback and snubber topologies but is not rated for continuous bidirectional conduction.

Can BSP300L6327HUSA1 be used in automotive applications?

Yes - it is qualified per AEC-Q101 for stress testing and RoHS compliant. However, its 0.19 A ID and 1.8 W Ptot limit use to low-power automotive auxiliary functions such as HVAC control bias supplies or sensor interface switches, not main power conversion.

How does thermal resistance change with PCB copper area?

RthJA is specified ≤70 K/W for a 40 mm × 40 mm board with 6 cm² copper on the drain pad. Reducing copper area increases RthJA nonlinearly - e.g., halving copper area may raise RthJA by >30 %. Thermal simulation or IR imaging is recommended for non-standard layouts.

BSP300L6327HUSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
20Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
230 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223-4-21

BSP300L6327HUSA1 FAQ

1.How can I place an order for BSP300L6327HUSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP300L6327HUSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP300L6327HUSA1 reliable?

The price and inventory of BSP300L6327HUSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP300L6327HUSA1 is usually 5 days.

3.What payment methods are accepted for BSP300L6327HUSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP300L6327HUSA1 transactions.

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4.How is shipping managed for BSP300L6327HUSA1?

BSP300L6327HUSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP300L6327HUSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP300L6327HUSA1?

For technical support, including BSP300L6327HUSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP300L6327HUSA1 requirements.

6.How does Aetrix verify that BSP300L6327HUSA1 is sourced from the original manufacturer or authorized distributors?

All BSP300L6327HUSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP300L6327HUSA1 meets industry standards.

7.What is the process for return or replacement of BSP300L6327HUSA1?

All BSP300L6327HUSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP300L6327HUSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP300L6327HUSA1 part is unused and in its original packaging.

Return procedure for BSP300L6327HUSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSP300L6327HUSA1 Tags

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