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Infineon Technologies BSP315P-E6327

Part No.:
BSP315P-E6327
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBSP315P-E6327.pdf
Description:
MOSFET P-CH 60V 1.17A SOT223-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,407

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Product details

Overview

BSP315P-E6327 from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ small-signal MOSFET rated for −60 V drain-source voltage, 0.8 Ω RDS(on) at VGS = −4.5 V, and −1.17 A continuous drain current. It features logic-level gate drive, avalanche ruggedness, and dv/dt immunity-designed for low-power load switching in industrial control and power management circuits.

For engineers reviewing the BSP315P-E6327 datasheet, BSP315P-E6327 pinout, BSP315P-E6327 application, or BSP315P-E6327 equivalent, key selection criteria include its SOT-223 package thermal performance, −1.5 V typical gate threshold, reverse diode forward voltage of −0.97 V, and 24 mJ single-pulse avalanche energy rating.

Technical Context

This device operates as a normally-off P-channel switch with a gate threshold voltage centered at −1.5 V and specified down to −2 V at Tj = 25 °C. Its RDS(on) remains stable across temperature (0.5–0.8 Ω at VGS = −10 V), supporting reliable operation up to 150 °C junction temperature.

The integrated body diode exhibits trr = 30.5–46 ns and Qrr = 36–54 µC under defined conditions, enabling moderate-speed freewheeling in DC-DC converters and motor drivers without external diode supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDS−60 V - maximum blocking voltage for low-voltage DC bus isolation
RDS(on) @ VGS = −4.5 V0.8 Ω - enables <1 W conduction loss at −1.17 A, suitable for thermally constrained PCB layouts
ID (continuous)−1.17 A @ TA = 25 °C - defines steady-state load capacity on standard FR4 with 6 cm² copper
EAS24 mJ - quantifies single-pulse avalanche robustness during inductive turn-off transients
VGS(th)−1.5 V (typ) - ensures full enhancement with 3.3 V logic-level microcontroller outputs
tr/tf9–14 ns / 19–28 ns - supports switching frequencies up to ~1 MHz in non-resonant topologies
VSD−0.97 V @ IF = −1.17 A - low forward drop reduces freewheeling losses in buck or H-bridge configurations

Pinout & Package

SOT-223 package with exposed drain pad (Pin 4) for enhanced thermal dissipation; footprint optimized for 6 cm² copper area on FR4 PCB.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1Gate (G)Control input; accepts logic-level −4.5 V to fully enhance channel
Pin 2 & Pin 4Drain (D)High-side switched node; electrically tied and thermally connected to soldering point
Pin 3Source (S)Reference terminal for gate drive; connects to system ground or floating return path

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced with −4.5 V gate bias, compatible with 3.3 V/5 V MCU GPIOs
Avalanche-rated24 mJ single-pulse EAS enables reliable operation under inductive load switching stress
dv/dt immuneRated to 6 kV/µs-prevents false turn-on during fast transient voltage spikes
Integrated body diodeLow VSD (−0.97 V) and controlled Qrr support efficient freewheeling without external diode

Applications

Industrial Power SequencingUSB Port Protection

Use Scenario: Controlled power-up/down sequencing of multiple 5–24 V rails in PLC I/O modules.

IC Role / Device Role / Timing Role: High-side load switch managing rail enable timing and fault isolation.

Use Value: −1.5 V VGS(th) ensures precise turn-on with 3.3 V sequencer outputs; 24 mJ EAS absorbs inrush-induced transients.

Use Scenario: Reverse-current and overvoltage protection for downstream USB peripherals.

IC Role / Device Role / Timing Role: P-channel high-side switch placed between upstream supply and USB VBUS line.

Use Value: Low RDS(on) (0.8 Ω) limits voltage drop below 1 V at 1 A; −60 V VDS provides margin against hot-swap surges.

LED Driver Current SinkLow-Power Motor Control

Use Scenario: Constant-current sinking for indicator LEDs in battery-powered instrumentation.

IC Role / Device Role / Timing Role: Ground-referenced current sink with PWM-controlled gate drive.

Use Value: Stable RDS(on) vs. temperature enables accurate current regulation; SOT-223 allows compact layout near LED pads.

Use Scenario: Half-bridge high-side driver for brushed DC motors in portable tools.

IC Role / Device Role / Timing Role: High-side switch in discrete H-bridge controlling motor direction and braking.

Use Value: Body diode trr ≤ 46 ns minimizes shoot-through risk during commutation; dv/dt rating prevents spurious turn-on during motor back-EMF spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMG2305U-7RDS(on) = 0.45 Ω @ −4.5 V; lower VGS(th) (−0.9 V typ); SOT-23 packageHigher current density but limited thermal mass; unsuitable for >0.5 A continuous loadsSelect when board space is critical and power dissipation <0.3 W
SI2305DS-T1-E3RDS(on) = 0.85 Ω @ −4.5 V; no avalanche rating; 1.25 W PtotLacks EAS specification-requires external clamping for inductive loadsSelect only for purely resistive or capacitive switching with no inductive energy storage

Compared with DMG2305U-7 and SI2305DS-T1-E3, BSP315P-E6327 delivers superior thermal robustness via SOT-223 packaging, guaranteed avalanche capability, and tighter VGS(th) distribution-making it preferred for industrial-grade reliability where transient immunity and long-term stability are required.

Availability

BSP315P-E6327 is available at Aetrix Electronics and suitable for industrial power sequencing, USB port protection, LED driver current sinks, and low-power motor control requiring stable component supply and long-lifecycle support.

Supply support for BSP315P-E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BSP315P belongs to Infineon's SIPMOS™ small-signal MOSFET product line, engineered for high-reliability, logic-compatible switching in space-constrained industrial and consumer power systems.

FAQ

What is the maximum safe operating voltage for BSP315P-E6327?

The absolute maximum drain-source voltage is −60 V, verified per JEDEC JESD78A. Operation beyond this rating risks irreversible avalanche breakdown. Derating to −48 V is recommended for designs requiring >10⁵ cycle lifetime under repetitive transient stress.

Can BSP315P-E6327 be driven directly by a 3.3 V microcontroller?

Yes-its typical gate threshold voltage is −1.5 V, and it achieves full enhancement at −4.5 V. A 3.3 V GPIO pulling the gate to ground (with source at VIN) yields VGS = −3.3 V, sufficient for RDS(on) ≤ 1.4 Ω and reliable switching at ≤500 kHz.

Does BSP315P-E6327 require a gate resistor for stability?

A gate resistor (10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance and PCB inductance. The datasheet specifies switching times using RG = 18 Ω; omitting it may cause overshoot, increased EMI, or localized heating during fast transitions.

Is the SOT-223 package lead-free and RoHS-compliant?

Yes-BSP315P-E6327 is manufactured in a lead-free, RoHS-compliant process per EU Directive 2011/65/EU and IPC/JEDEC J-STD-020 moisture sensitivity level 1, with peak reflow temperature tolerance up to 260 °C.

BSP315P-E6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
1.17A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
800mOhm @ 1.17A, 10V
Vgs(th) (Max) @ Id:
2V @ 160µA
Gate Charge (Qg) (Max) @ Vgs:
7.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
160 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta)
Operating Temperature:
-55°C ~ 155°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223-4

BSP315P-E6327 FAQ

1.How can I place an order for BSP315P-E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP315P-E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP315P-E6327 reliable?

The price and inventory of BSP315P-E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP315P-E6327 is usually 5 days.

3.What payment methods are accepted for BSP315P-E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP315P-E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP315P-E6327?

BSP315P-E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP315P-E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP315P-E6327?

For technical support, including BSP315P-E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP315P-E6327 requirements.

6.How does Aetrix verify that BSP315P-E6327 is sourced from the original manufacturer or authorized distributors?

All BSP315P-E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP315P-E6327 meets industry standards.

7.What is the process for return or replacement of BSP315P-E6327?

All BSP315P-E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSP315P-E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP315P-E6327 part is unused and in its original packaging.

Return procedure for BSP315P-E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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