Infineon Technologies BSP315PE6327T

Overview

BSP315PE6327T from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ small-signal MOSFET in SOT-223 package, rated for −60 V V_DS, 0.8 Ω R_DS(on) at V_GS = −4.5 V, and −1.17 A continuous drain current. It features logic-level gate drive, avalanche rating (24 mJ), and dv/dt ruggedness (6 kV/µs), enabling use in low-voltage DC-DC load switching and power management circuits.

For engineers reviewing the BSP315PE6327T datasheet, BSP315PE6327T pinout, BSP315PE6327T application, or BSP315PE6327T equivalent, key selection criteria include its −60 V blocking capability, SOT-223 thermal performance (R_thJA = 70 K/W with 6 cm² copper), −1.5 V typical gate threshold, and integrated body diode with 30.5 ns reverse recovery time.

Technical Context

This device operates as a single N-channel depletion-mode switch in high-side configuration only when used with level-shifting gate control; its P-channel topology allows direct logic-level interfacing without external drivers. The −1.5 V V_GS(th) enables reliable turn-on from 3.3 V or 5 V microcontroller outputs, while the 0.8 Ω R_DS(on) at −4.5 V ensures <1.2 W conduction loss at full rated current.

Its avalanche-rated construction supports unclamped inductive switching up to 24 mJ per pulse, and the 6 kV/µs dv/dt rating prevents spurious turn-on in noisy environments. The SOT-223 package provides enhanced thermal dissipation over SOT-23, with Pin 4 serving as the thermal pad connected to the drain for PCB heat sinking.

Key Specifications

Pinout & Package

SOT-223 package with exposed drain pad (Pin 4) for thermal conduction to PCB copper area. Standard 3-pin layout with Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (thermal tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Compared with DMG2305UVT-7 and IRLML6344TRPBF, BSP315PE6327T offers superior avalanche robustness (24 mJ) and documented dv/dt immunity (6 kV/µs), making it preferred for unclamped inductive switching and noisy industrial environments where reliability under transient stress is critical.

Availability

BSP315PE6327T is available at Aetrix Electronics and suitable for industrial I/O modules, PLC output stages, and low-voltage DC-DC power management requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for BSP315PE6327T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The BSP315P belongs to Infineon's SIPMOS™ small-signal MOSFET product line, engineered for high-reliability, logic-compatible switching in industrial and embedded power applications where ruggedness and thermal efficiency are prioritized over ultra-low R_DS(on).

FAQ

What is the maximum junction temperature for continuous operation?

The BSP315PE6327T has a maximum junction temperature of +150 °C, validated across its full operating range. Thermal derating begins at T_A = 70 °C, where continuous drain current drops to −0.94 A. Safe operation requires maintaining T_j ≤ 150 °C via adequate PCB copper area (≥6 cm²) and ambient airflow per Infineon's SOT-223 thermal model.

Can this MOSFET be used in high-side switching configurations?

Yes - the P-channel structure enables high-side switching with source tied to the positive rail and load connected between drain and ground. Gate drive must be referenced to source potential; for 3.3 V logic control, ensure V_GS ≤ −1.5 V (i.e., gate ≤ V_SOURCE − 1.5 V). No level shifter is needed if the MCU IO shares the same ground reference as the source node.

Does the device require a gate resistor for ESD or switching control?

A gate resistor is not required for ESD protection due to built-in gate oxide robustness (±20 V V_GS rating), but a 10–47 Ω series resistor is recommended to damp ringing and limit peak gate current during fast switching. The 18 Ω test condition in datasheet timing specs confirms compatibility with standard MCU GPIO drive strength.

Is the SOT-223 thermal pad (Pin 4) electrically isolated?

No - Pin 4 is internally connected to the drain terminal and is not electrically isolated. It must be soldered to a PCB copper pour tied to the drain net for both thermal conduction and electrical continuity. Using it as a separate ground or signal node will cause short-circuit failure.