Infineon Technologies BSP315PL6327HTSA1
- Part No.:
- BSP315PL6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP315PL6327HTSA1.pdf
- Description:
- MOSFET P-CH 60V 1.17A SOT223-4
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BSP315PL6327HTSA1 from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ small-signal MOSFET in SOT-223 package, rated for −60 V drain-source voltage, 0.8 Ω RDS(on) at VGS = −4.5 V, and −1.17 A continuous drain current. It features logic-level gate drive, avalanche rating (24 mJ single-pulse), and dv/dt ruggedness-used in low-power DC-DC load switching and reverse polarity protection circuits.
For engineers reviewing the BSP315PL6327HTSA1 datasheet, BSP315PL6327HTSA1 pinout, BSP315PL6327HTSA1 application, or BSP315PL6327HTSA1 equivalent, key selection criteria include verified −60 V VBS rating, guaranteed RDS(on) ≤ 0.8 Ω at −4.5 V gate drive, SOT-223 thermal performance with RthJA = 70 K/W (6 cm² copper), and integrated body diode with trr ≤ 46 ns and Qrr ≤ 54 µC.
Technical Context
This device operates as a normally-off P-channel switch requiring negative gate-to-source bias to conduct. Its threshold voltage (VGS(th)) ranges from −1.0 V to −2.0 V at Tj = 25 °C, enabling direct interface with 3.3 V/5 V logic controllers via level-shifting or open-drain drivers. The MOSFET supports fast switching with td(on) = 24 ns, tr = 9 ns, and Qg = 5.2 nC (VGS = 0 to −10 V).
Thermal design relies on Pin 4 (drain) soldered to ≥6 cm² PCB copper area, delivering RthJA = 70 K/W under natural convection. Avalanche capability is validated at ID = −1.17 A, VDD = −25 V, RGS = 25 Ω, ensuring robustness against inductive turn-off transients in relay drivers and motor control interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −60 V - Maximum blocking voltage for 24 V automotive and industrial bus protection |
| RDS(on) @ VGS = −4.5 V | 0.8 Ω - Enables <1 W conduction loss at −1.17 A, suitable for thermally constrained PCBs |
| ID (continuous) | −1.17 A @ TA = 25 °C - Rated current for sustained load switching without forced cooling |
| EAS | 24 mJ - Single-pulse avalanche energy tolerance for unclamped inductive switching |
| trr / Qrr | 46 ns / 54 µC - Fast body diode recovery supporting synchronous rectification and flyback snubbing |
| Ciss | 160 pF - Input capacitance defining gate drive strength requirement for 100 kHz–1 MHz switching |
| RthJA | 70 K/W - Thermal resistance with 6 cm² copper, enabling 1.8 W dissipation at ΔT = 126 K |
Pinout & Package
SOT-223 package with exposed drain pad (Pin 4) for thermal conduction and mechanical anchoring. Standard 4-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source, Pin 4 = Drain (solderable thermal pad). Mounting requires full-surface soldering of Pin 4 to ≥6 cm² copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; accepts −4.5 V to −10 V logic-level drive for full enhancement |
| Pin 2 | Drain (tab) | Main high-side current path; electrically and thermally connected to Pin 4 |
| Pin 3 | Source | Reference node for gate drive and current return; tied to system ground in high-side switches |
| Pin 4 | Drain (thermal pad) | Primary thermal path to PCB; must be soldered to ≥6 cm² copper for rated power dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Full enhancement at VGS = −4.5 V enables direct interface with 3.3 V microcontrollers |
| Avalanche-rated operation | 24 mJ single-pulse EAS eliminates need for external clamping in inductive load switching |
| dv/dt ruggedness | 6 kV/µs rating prevents false turn-on during high-slew-rate voltage transients |
| Integrated body diode | Qrr = 54 µC and trr = 46 ns support efficient freewheeling in buck and flyback topologies |
| SIPMOS™ technology | Optimized for low RDS(on)/area ratio and stable parametric drift over temperature |
Applications
| Reverse Polarity Protection | Low-Side Load Switch |
|---|---|
Use Scenario: Protecting 12–24 V battery-powered equipment from accidental reverse connection. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by voltage divider or dedicated controller. Use Value: Eliminates need for series Schottky diode, reducing forward drop from ~0.4 V to <0.9 V at −1.17 A and improving efficiency by >3%. | Use Scenario: Enabling/disabling peripheral modules (e.g., sensors, displays) in embedded systems. IC Role / Device Role / Timing Role: Low-side switch controlled by GPIO, sinking current to ground when active. Use Value: RDS(on) ≤ 0.8 Ω ensures <1.1 W loss at −1.17 A, allowing compact layout without heatsinking. |
| DC-DC Converter Synchronous Rectifier | Relay/Actuator Driver |
Use Scenario: Replacing Schottky diode in non-isolated buck converter output stage. IC Role / Device Role / Timing Role: Synchronously commutated P-channel switch operating at 100–500 kHz. Use Value: Body diode trr ≤ 46 ns and Qrr ≤ 54 µC minimize switching losses and voltage overshoot during dead-time transitions. | Use Scenario: Driving 24 V DC solenoids or latching relays with inductive kick suppression. IC Role / Device Role / Timing Role: High-side switch absorbing inductive energy during turn-off via avalanche mode. Use Value: 24 mJ EAS rating allows safe unclamped turn-off of 100 mH/1 A loads without snubber networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 0.55 Ω @ −4.5 V; SOT-23 package; lower ID = −4.2 A but higher thermal resistance | Higher power density but limited to <0.5 W continuous due to SOT-23 thermal limits | Select for space-constrained PCBs where peak current exceeds 1.17 A but average dissipation is low |
| SI2301DDS-T1-GE3 | RDS(on) = 0.115 Ω @ −4.5 V; SOT-23; VDS = −20 V only | Not suitable for 24 V bus protection; limited to ≤12 V systems | Choose only for low-voltage (<15 V), high-current portable applications where footprint is critical |
Compared with DMG2305UVT-7 and SI2301DDS-T1-GE3, BSP315PL6327HTSA1 uniquely balances −60 V rating, SOT-223 thermal capability, and logic-level drive-making it optimal for industrial 24 V load switching where reliability under avalanche stress and board-level heat spreading are mandatory.
Availability
BSP315PL6327HTSA1 is available at Aetrix Electronics and suitable for reverse polarity protection, low-side load switching, DC-DC synchronous rectification, and relay driver circuits requiring stable component supply across automotive aftermarket, industrial control, and IoT edge devices.
Supply support for BSP315PL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This part belongs to the SIPMOS™ small-signal transistor product line, engineered for high-reliability, logic-compatible P-channel switching in thermally demanding environments such as automotive body electronics and programmable logic controllers.
FAQ
Is BSP315PL6327HTSA1 suitable for high-side switching with 3.3 V microcontroller GPIO?
Yes. With VGS(th) between −1.0 V and −2.0 V and full enhancement at −4.5 V, it can be driven directly using a 3.3 V GPIO through an inverting level shifter or open-drain buffer. A 10 kΩ pull-up to −12 V and 10 kΩ gate resistor ensure reliable turn-on while limiting capacitive current surge.
What is the maximum allowable PCB copper area for Pin 4 to achieve RthJA = 70 K/W?
The datasheet specifies RthJA = 70 K/W is achieved with a 40 mm × 40 mm × 1.5 mm FR4 PCB featuring exactly 6 cm² of 70 µm-thick copper on one layer connected to Pin 4. Reducing copper area increases RthJA linearly; doubling copper to 12 cm² improves it to ~55 K/W under identical test conditions.
Does the body diode support continuous conduction in buck converter applications?
No. The body diode is rated for −1.17 A continuous forward current (IS) only at TA = 25 °C. In buck converters, it conducts only during dead time; sustained conduction causes junction overheating. For continuous freewheeling, use external Schottky diodes or synchronous gate timing that avoids body diode conduction.
Can BSP315PL6327HTSA1 replace BSP315P in existing designs?
Yes-BSP315PL6327HTSA1 is the tape-and-reel packaged variant of BSP315P, sharing identical electrical, thermal, and mechanical specifications. The "L6327" suffix denotes reel packaging per JEDEC standard, and "HTSA1" indicates Infineon's standard RoHS-compliant SOT-223 assembly. No layout or firmware changes are required.
BSP315PL6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 1.17A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 160 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4-21
BSP315PL6327HTSA1 FAQ
1.How can I place an order for BSP315PL6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP315PL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that BSP315PL6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSP315PL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP315PL6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSP315PL6327HTSA1?
All BSP315PL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP315PL6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP315PL6327HTSA1 part is unused and in its original packaging.
Return procedure for BSP315PL6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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