Infineon Technologies BSP316PE6327
- Part No.:
- BSP316PE6327
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP316PE6327.pdf
- Description:
- MOSFET P-CH 100V 680MA SOT223-4
- Quantity:
- Payment:

- Shipping:

Inventory:2,727
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Product details
Overview
BSP316PE6327 from Infineon Technologies is a P-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET rated for -100 V VDS, 1.8 Ω RDS(on) at -10 V VGS, and -0.68 A continuous drain current. It features dv/dt ruggedness up to 6 kV/µs and operates across -55 °C to +150 °C, enabling use in industrial power switches and load management circuits where fast switching and robustness against voltage transients are required.
For engineers reviewing the BSP316PE6327 datasheet, BSP316PE6327 pinout, BSP316PE6327 application, or BSP316PE6327 equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = -1.0 to -2.0 V), low RDS(on) at -4.5 V VGS, reverse diode recovery performance (trr = 44.2–55.3 ns), and SOT-223-4 package thermal resistance (RthJA = 48 K/W with 6 cm² copper).
Technical Context
This device implements a planar P-channel MOSFET structure optimized for high dv/dt immunity and stable operation under inductive switching conditions. Its gate threshold voltage range (-1.0 to -2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while the integrated body diode supports freewheeling in half-bridge and buck configurations.
The SOT-223-4 package integrates a dual-drain configuration (pins 2 and 4 electrically connected), reducing source inductance and improving switching consistency. Thermal design is supported by a specified junction-to-soldering-point resistance of 15–25 K/W and validated transient thermal impedance curves for pulse-width-dependent power handling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Maximum blocking voltage for high-side or floating-switch applications |
| RDS(on) @ -10 V VGS | 1.4–1.8 Ω - Enables <1.2 W conduction loss at -0.68 A DC load current |
| VGS(th) | -1.0 to -2.0 V - Ensures full enhancement with 3.3 V microcontroller outputs |
| ID (continuous) | -0.68 A @ TA = 25 °C - Suitable for low-power load switching and signal-level power control |
| dv/dt rating | 6 kV/µs - Confirmed immunity to rapid voltage transients in motor drive and relay replacement |
| tr/tf | 7.5/25.9 ns - Supports >10 MHz switching in PWM-controlled DC-DC stages |
| Qg | -5.1 to -6.4 nC - Low gate charge enables efficient driving with minimal gate driver power |
Pinout & Package
The BSP316PE6327 is housed in a P-SOT223-4-1 surface-mount package with exposed drain pad (pins 2 and 4 tied internally). The package provides enhanced thermal dissipation via soldered drain connection to PCB copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal requiring logic-level negative voltage relative to source |
| Pin 2 & Pin 4 | Drain | Common high-voltage output node; dual pins reduce bondwire inductance and improve current sharing |
| Pin 3 | Source | Reference node for gate drive and load return path; connects to system ground or floating rail |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with -4.5 V VGS, compatible with 3.3 V/5 V microcontrollers without level-shifting |
| dv/dt ruggedness | Rated 6 kV/µs per JEDEC JESD22-A114, eliminating need for external snubbers in inductive loads |
| Integrated body diode | Reverse recovery time trr = 44.2–55.3 ns and Qrr = 56.3–70.4 nC support efficient freewheeling in buck converters |
| SOT-223-4 thermal design | RthJA = 48 K/W with 6 cm² copper reduces junction temperature rise by ~30% vs. standard SOT-223 |
Applications
| Industrial Load Switch | Low-Voltage DC-DC Converter |
|---|---|
Use Scenario: Remote on/off control of 24 V solenoids, relays, or LED arrays in PLC I/O modules. IC Role / Device Role / Timing Role: High-side load switch with fast turn-off to prevent back-EMF latch-up during deactivation. Use Value: Logic-level gate enables direct MCU GPIO drive; dv/dt rating eliminates snubber components and saves board space. | Use Scenario: Synchronous rectification in 5 V input, 3.3 V output buck converter for embedded controllers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction losses. Use Value: RDS(on) ≤ 1.8 Ω at -4.5 V VGS cuts forward drop to <1.2 V, improving efficiency by ≥3% over 0.5 V Schottky. |
| Motor Driver Half-Bridge | Power Supply Sequencing |
Use Scenario: Upper-leg switch in 12 V brushed DC motor H-bridge for robotics actuators. IC Role / Device Role / Timing Role: High-side switch with body diode conducting flyback current during PWM off-time. Use Value: Confirmed trr ≤ 55.3 ns and Qrr ≤ 70.4 nC minimize switching loss and voltage overshoot during commutation. | Use Scenario: Controlled power-up sequencing of FPGA core and I/O rails in telecom baseband cards. IC Role / Device Role / Timing Role: Precision enable switch isolating downstream regulators until upstream supply stabilizes. Use Value: Tight VGS(th) distribution (-1.0 to -2.0 V) ensures consistent turn-on timing across temperature and unit variance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305U-7 | RDS(on) = 45 mΩ @ -4.5 V VGS; lower voltage rating (-20 V); SOT-23 package | Not suitable for >24 V systems; limited to low-voltage portable electronics | Select only for 3.3/5 V rail switching where VDS < 20 V and footprint is constrained |
| IPD250P04P4L-1R1 | RDS(on) = 1.1 mΩ @ -10 V VGS; -40 V rating; TO-252 package; higher current (250 A pulsed) | Over-specified for signal-level loads; requires larger layout and gate driver strength | Prefer for high-current 24–40 V industrial switching where thermal margin is critical |
Compared with DMG2305U-7 and IPD250P04P4L-1R1, the BSP316PE6327 uniquely balances -100 V capability, logic-level drive, and SOT-223 thermal performance-making it optimal for mid-voltage industrial control where both voltage headroom and gate simplicity matter.
Availability
BSP316PE6327 is available at Aetrix Electronics and suitable for industrial load switching, low-voltage DC-DC conversion, motor driver half-bridges, and power supply sequencing requiring stable component supply and long-term lifecycle support.
Supply support for BSP316PE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial MOSFETs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.
The BSP316PE6327 belongs to Infineon's SIPMOS™ small-signal MOSFET product line, engineered for robust, logic-compatible switching in industrial automation, building controls, and embedded power systems where reliability under voltage transients is essential.
FAQ
Is BSP316PE6327 suitable for high-frequency PWM applications?
Yes. With turn-on delay of 4.7 ns, rise time of 7.5 ns, and total gate charge of -5.1 to -6.4 nC, the BSP316PE6327 supports clean switching up to 10 MHz in low-duty-cycle applications. Its low Ciss (117–146 pF) and Crss (12–15 pF) minimize Miller effect, enabling stable operation with standard gate drivers.
What is the maximum safe operating temperature for continuous use?
The device is rated for junction temperatures from -55 °C to +150 °C. For continuous operation at full -0.68 A drain current, ambient temperature must remain ≤70 °C when mounted on a 6 cm² copper area, based on RthJA = 48 K/W. Derating curves confirm 0.54 A max at 70 °C ambient.
Does BSP316PE6327 require a gate resistor for stability?
A gate resistor of 6 Ω is used in the datasheet's switching time test conditions and is recommended for EMI control and ringing suppression. While not strictly mandatory for logic-level drive, a 4.7–10 Ω series resistor improves edge control and prevents oscillation when driving inductive loads with fast edges.
Can BSP316PE6327 replace an N-channel MOSFET in high-side configuration?
No-it is a P-channel device designed for high-side switching but cannot substitute for an N-channel part without circuit redesign. Unlike N-channel devices, it turns on with VGS < 0 and requires gate voltage below source. Its use in high-side roles avoids level-shifting but demands careful attention to gate drive polarity and voltage margins.
BSP316PE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 680mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.8Ohm @ 680mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 146 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP316PE6327 FAQ
1.How can I place an order for BSP316PE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP316PE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP316PE6327 reliable?
The price and inventory of BSP316PE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP316PE6327 is usually 5 days.
3.What payment methods are accepted for BSP316PE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP316PE6327 transactions.
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4.How is shipping managed for BSP316PE6327?
BSP316PE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP316PE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP316PE6327?
For technical support, including BSP316PE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP316PE6327 requirements.
6.How does Aetrix verify that BSP316PE6327 is sourced from the original manufacturer or authorized distributors?
All BSP316PE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP316PE6327 meets industry standards.
7.What is the process for return or replacement of BSP316PE6327?
All BSP316PE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSP316PE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP316PE6327 part is unused and in its original packaging.
Return procedure for BSP316PE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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