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Infineon Technologies BSP316PE6327T
- Part No.:
- BSP316PE6327T
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP316PE6327T.pdf
- Description:
- MOSFET P-CH 100V 680MA SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:7,829
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Product details
Overview
BSP316PE6327T from Infineon Technologies is a P-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET rated for −100 V drain-source voltage, 1.8 Ω RDS(on) at −10 V VGS, and −0.68 A continuous drain current. It features dv/dt ruggedness (6 kV/µs), operates down to −55 °C, and is optimized for low-voltage gate drive in load switching and power management circuits.
For engineers reviewing the BSP316PE6327T datasheet, BSP316PE6327T pinout, BSP316PE6327T application, or BSP316PE6327T equivalent, key selection criteria include its logic-level gate threshold (−1.5 V typ), thermal resistance (RthJA = 48 K/W with 6 cm² copper), reverse diode capability (−0.68 A continuous), and SOT-223-4 package with drain-connected pins 2 and 4.
Technical Context
This MOSFET uses a planar SIPMOS™ process enabling stable enhancement-mode operation with tightly controlled VGS(th) (−1 to −2 V) and low RDS(on) temperature coefficient. Its dv/dt rating ensures robustness against parasitic turn-on in inductive switching environments.
The integrated body diode supports bidirectional current flow with trr = 44.2–55.3 ns and Qrr = 56.3–70.4 nC, while gate charge parameters (Qg = −5.1 to −6.4 nC, Qgd = −1.87 to −2.8 nC) support efficient high-frequency switching up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −100 V - supports DC bus isolation and flyback snubbing in ≤100 V systems |
| RDS(on) @ VGS = −10 V | 1.4–1.8 Ω - enables <1.2 W conduction loss at −0.68 A, suitable for thermally constrained PCB layouts |
| VGS(th) | −1 to −2 V - fully enhanced with 3.3 V logic-level microcontroller outputs |
| ID (continuous) | −0.68 A @ TA = 25 °C - fits compact load-switching applications without forced cooling |
| dv/dt rating | 6 kV/µs - prevents false triggering during fast voltage transients in motor or relay drivers |
| Qg | −5.1 to −6.4 nC - allows <100 ns switching transitions with 10 Ω gate resistor |
| tr/tf | 7.5/25.9 ns typ - supports clean edge control in PWM dimming and digital power sequencing |
Pinout & Package
Package: P-SOT223-4-1 (SMD, 4-pin, drain-connected pins 2 and 4, exposed drain pad for thermal conduction).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Logic-level input node; requires no level-shifting when driven by 3.3 V or 5 V MCU GPIO |
| Pins 2 & 4 | Drain | Internally connected; primary high-side switching node and thermal path to PCB copper |
| Pin 3 | Source | Reference node for gate drive; connects to system ground or load return path |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with VGS ≥ −4.5 V, compatible with standard microcontroller I/O |
| dv/dt ruggedness | Rated 6 kV/µs - eliminates need for external gate clamping in inductive load switching |
| Integrated body diode | Rated −0.68 A continuous, 44.2 ns trr - supports freewheeling in buck/boost and H-bridge topologies |
| Thermal performance | RthJA = 48 K/W with 6 cm² copper - enables >1 W dissipation on standard FR4 without heatsink |
Applications
| LED Constant-Current Driver | USB Power Switch |
|---|---|
Use Scenario: Regulating current through high-brightness LED strings in automotive interior lighting. IC Role / Device Role / Timing Role: Low-side constant-current switch controlling LED cathode path with PWM dimming. Use Value: Logic-level gate enables direct STM32 GPIO control; RDS(on) stability over temperature maintains ±3% current accuracy across −40 to +85 °C. | Use Scenario: Enabling/disabling VBUS power to downstream USB peripherals in embedded host designs. IC Role / Device Role / Timing Role: Load switch isolating 5 V supply with controlled inrush and reverse-current blocking. Use Value: Integrated body diode blocks reverse current; dv/dt rating prevents false turn-on during hot-plug transients. |
| Industrial Sensor Power Gate | Low-Voltage DC Motor Brake |
Use Scenario: Sequencing power to analog sensor modules (e.g., pressure, temperature) in programmable logic controllers. IC Role / Device Role / Timing Role: High-side or low-side enable switch with precise ON/OFF timing and leakage control. Use Value: Ultra-low IDSS (≤−0.2 µA @ 150 °C) ensures sensor bias integrity during standby; −55 °C rating supports outdoor deployment. | Use Scenario: Shorting motor terminals to dissipate kinetic energy during emergency stop in 24 V brushed DC motor systems. IC Role / Device Role / Timing Role: Bidirectional freewheeling switch conducting reverse current during deceleration. Use Value: Body diode forward voltage ≤−1.2 V at −0.68 A minimizes braking energy loss; 6 kV/µs dv/dt withstands back-EMF spikes up to 100 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UX-13 | RDS(on) = 45 mΩ higher at −4.5 V; VGS(th) −0.5 to −1.2 V (tighter range); SOT-23 package | Lower current rating (−4.2 A max) but smaller footprint; less thermal mass limits sustained power | Select for space-constrained, lower-current (<−0.5 A) loads where board area outweighs thermal margin |
| SI2301BDS-T1-E3 | RDS(on) = 1.2 Ω @ −4.5 V (lower); VGS(th) −0.4 to −1.0 V; SOT-23 package; no dv/dt rating specified | Better RDS(on) at logic levels but uncharacterized dv/dt behavior; unsuitable for inductive switching without external protection | Select only for resistive or capacitive loads with minimal voltage transients; avoid in relay/motor drive |
Compared with DMG2305UX-13 and SI2301BDS-T1-E3, BSP316PE6327T uniquely combines −100 V rating, verified 6 kV/µs dv/dt immunity, and SOT-223 thermal performance-making it the only option among the three qualified for industrial inductive load switching above 48 V.
Availability
BSP316PE6327T is available at Aetrix Electronics and suitable for LED driver design, USB power management, industrial sensor sequencing, and low-voltage motor braking requiring stable component supply and long-term manufacturability.
Supply support for BSP316PE6327T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification under ISO/TS 16949 and AEC-Q101.
The BSP316P belongs to Infineon's SIPMOS™ small-signal MOSFET product line, engineered for reliable logic-level switching in space- and thermally-constrained industrial and automotive subsystems.
FAQ
Is BSP316PE6327T suitable for high-frequency PWM switching?
Yes-it delivers 7.5 ns rise time and 25.9 ns fall time with 6 Ω gate resistance, supporting clean switching up to 500 kHz in low-duty-cycle applications. Its Qg of −5.1 to −6.4 nC ensures low gate-drive power loss, though layout parasitics must be minimized to maintain performance.
What is the maximum safe operating junction temperature?
The absolute maximum junction temperature is +150 °C per the datasheet. Derating begins at TA > 25 °C: at 70 °C ambient, continuous ID drops to −0.54 A. Thermal design must ensure RthJA ≤ 48 K/W using ≥6 cm² copper on FR4, with no forced airflow assumed.
Does BSP316PE6327T have avalanche rating?
No-this device is not rated for repetitive avalanche energy. The datasheet specifies only single-pulse SOA curves and dv/dt ruggedness. For inductive loads with unclamped flyback, external suppression (e.g., TVS, RC snubber) remains mandatory to prevent destructive breakdown.
Can BSP316PE6327T replace N-channel MOSFETs in high-side configurations?
No-it is a P-channel device intended for low-side switching or high-side configuration with gate drive referenced to the source. Direct replacement of an N-channel high-side switch would require redesigning the gate driver to swing above the source potential, which this part does not support.
BSP316PE6327T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 680mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.8Ohm @ 680mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 146 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP316PE6327T FAQ
1.How can I place an order for BSP316PE6327T through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP316PE6327T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP316PE6327T reliable?
The price and inventory of BSP316PE6327T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP316PE6327T is usually 5 days.
3.What payment methods are accepted for BSP316PE6327T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP316PE6327T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSP316PE6327T?
BSP316PE6327T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP316PE6327T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP316PE6327T?
For technical support, including BSP316PE6327T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP316PE6327T requirements.
6.How does Aetrix verify that BSP316PE6327T is sourced from the original manufacturer or authorized distributors?
All BSP316PE6327T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP316PE6327T meets industry standards.
7.What is the process for return or replacement of BSP316PE6327T?
All BSP316PE6327T units undergo pre-shipment inspection (PSI). If there is an issue with BSP316PE6327T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP316PE6327T part is unused and in its original packaging.
Return procedure for BSP316PE6327T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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