Infineon Technologies BSP316PL6327HTSA1

Overview

BSP316PL6327HTSA1 from Infineon Technologies is a P-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET rated for -100 V drain-source voltage, 1.8 Ω R_DS(on) at -10 V V_GS, and -0.68 A continuous drain current. It features dv/dt ruggedness up to 6 kV/µs and operates across -55 °C to +150 °C, commonly used in low-power DC-DC load switching and reverse polarity protection circuits.

For engineers reviewing the BSP316PL6327HTSA1 datasheet, BSP316PL6327HTSA1 pinout, BSP316PL6327HTSA1 application, or BSP316PL6327HTSA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = -1.0 to -2.0 V), thermal resistance (R_thJA = 48–115 K/W depending on PCB layout), and integrated body diode performance (V_SD ≤ 1.2 V at -0.68 A).

Technical Context

This device implements a planar SIPMOS structure optimized for low-voltage gate drive and robust transient immunity. Its -1.5 V typical gate threshold enables direct interfacing with 3.3 V and 5 V microcontroller outputs without level-shifting, while the dv/dt rating of 6 kV/µs ensures reliable operation in inductive load switching environments.

The SOT-223-4 package integrates dual drain pins (pins 2 and 4) for enhanced thermal conduction and current handling, with the source (pin 3) and gate (pin 1) configured for standard high-side or low-side switching topologies. Dynamic parameters-including 117 pF input capacitance and 4.7 ns turn-on delay-support stable operation up to several hundred kHz in PWM-controlled power stages.

Key Specifications

Pinout & Package

Packaged in P-SOT223-4-1 (SOT-223 variant with 4 terminals), this MOSFET uses a surface-mount plastic package with exposed drain pad for thermal dissipation. Pin 1 is Gate, Pins 2 & 4 are Drain (internally connected), and Pin 3 is Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Compared with DMG2305UVT-7 and IPD250N10N3G, BSP316PL6327HTSA1 uniquely balances logic-level drivability, SOT-223 compactness, and dv/dt ruggedness-making it optimal for space-constrained industrial controls where gate drive simplicity and transient immunity are prioritized over ultra-low R_DS(on).

Availability

BSP316PL6327HTSA1 is available at Aetrix Electronics and suitable for reverse polarity protection, low-voltage load switching, and industrial relay driving requiring stable component supply and long-term manufacturability.

Supply support for BSP316PL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the SIPMOS™ small-signal MOSFET product line, designed specifically for logic-level-driven, thermally efficient switching in space-constrained industrial and automotive subsystems.

FAQ

Is BSP316PL6327HTSA1 suitable for high-side switching configurations?

Yes. As a P-channel MOSFET with V_GS(th) ranging from -1.0 V to -2.0 V, it operates reliably in high-side configurations using simple resistor-based gate pull-up to the supply rail. Its -100 V V_DS rating and dv/dt immunity make it appropriate for 24 V and 48 V bus applications where load disconnect and reverse polarity protection are required.

What is the maximum safe operating temperature for continuous use?

The device supports junction temperatures from -55 °C to +150 °C. For continuous operation, thermal design must ensure T_j remains ≤150 °C under worst-case ambient and power dissipation conditions. With R_thJA = 48 K/W (6 cm² copper), maximum allowable P_tot at 70 °C ambient is approximately 1.67 W.

Does BSP316PL6327HTSA1 include an integrated body diode?

Yes. It features a monolithic parasitic body diode with forward voltage V_SD ≤ 1.2 V at -0.68 A and reverse recovery time t_rr = 44.2–55.3 ns. This diode supports freewheeling in buck converters and reverse-current blocking in protection circuits, though external Schottky diodes may be added for faster recovery if needed.

Can this MOSFET be driven directly from a 3.3 V microcontroller GPIO?

Yes. With a typical V_GS(th) of -1.5 V and guaranteed -1.0 V minimum, the device fully enhances at |V_GS| ≥ 3.3 V. No level shifter or gate driver is required, simplifying PCB layout and reducing BOM count in low-power embedded systems.