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Infineon Technologies BSP317PE6327
- Part No.:
- BSP317PE6327
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP317PE6327.pdf
- Description:
- MOSFET P-CH 250V 430MA SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:5,009
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Product details
Overview
BSP317PE6327 from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ small-signal MOSFET in SOT-223 package, rated for −250 V drain-source voltage, 4 Ω RDS(on) at −10 V VGS, and −0.43 A continuous drain current. It features logic-level gate drive (VGS(th) = −1 to −2 V), 6 kV/µs dv/dt rating, and integrated body diode, used in high-voltage DC-DC converter feedback switches and industrial power supply protection circuits.
For engineers reviewing the BSP317PE6327 datasheet, BSP317PE6327 pinout, BSP317PE6327 application, or BSP317PE6327 equivalent, key selection criteria include its −250 V breakdown rating, low gate threshold for 3.3 V/5 V logic compatibility, thermal resistance (RthJA = 48–115 K/W depending on PCB layout), and reverse recovery charge (Qrr = 210–315 nC) in flyback snubber and hold-up switching stages.
Technical Context
This device operates as a high-voltage, low-current P-channel switch with enhancement-mode gate control. Its −1.5 V typical gate threshold enables direct interface with standard logic outputs, while the 6 kV/µs dv/dt rating ensures robustness against fast transient voltage spikes in inductive load switching.
The integrated body diode exhibits VSD = −0.84 to −1.2 V at −0.43 A and trr = 92–138 ns, supporting synchronous rectification and freewheeling in isolated DC-DC topologies where controlled reverse recovery is critical for EMI reduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −250 V: Maximum blocking voltage in high-side switch configurations for industrial 200 V DC bus systems. |
| RDS(on) | 3–4 Ω @ −10 V VGS: Enables <1.7 W conduction loss at −0.43 A, suitable for low-duty-cycle protection switches. |
| VGS(th) | −1 to −2 V: Ensures full enhancement with 3.3 V microcontroller GPIO without level-shifting circuitry. |
| Qg | −11.6 to −15.1 nC: Determines gate driver strength requirement; compatible with low-power logic drivers (e.g., TC4420). |
| trr | 92–138 ns: Limits reverse recovery energy dissipation during hard-switched transitions in flyback converters. |
| Ptot | 1.8 W @ TA = 25 °C: Requires ≥6 cm² copper pour on FR4 PCB for thermal management in sealed enclosures. |
Pinout & Package
SOT-223 package with exposed drain pad (Pin 2/4) for thermal conduction; standard 4-pin configuration with Gate (Pin 1), Drain (Pins 2 & 4), Source (Pin 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Logic-level input node; requires ≤20 V |VGS| rating and minimal gate charge (Qgs = −0.5 to −0.65 nC). |
| Pins 2 & 4 | Drain | High-voltage output node tied to PCB copper pour; dual pins reduce current density and improve thermal transfer to heatsink. |
| Pin 3 | Source | Reference node for gate drive; connects to system ground or floating bias rail in high-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| dv/dt rated | 6 kV/µs immunity supports reliable operation in noisy industrial environments with fast-switching inductive loads. |
| Logic-level gate | VGS(th) ≤ −2 V allows direct drive from 3.3 V/5 V MCUs without external level shifters or gate drivers. |
| Integrated body diode | VSD ≤ −1.2 V and Qrr ≤ 315 nC enable use as freewheeling path in non-synchronous buck or flyback converters. |
| SIPMOS™ technology | Optimized for low RDS(on)/gate charge trade-off, reducing total switching + conduction losses in low-frequency (<100 kHz) SMPS. |
Applications
| Industrial Power Supply Protection | High-Voltage DC-DC Feedback Switch |
|---|---|
Use Scenario: Overvoltage crowbar circuit in 200 V DC input industrial power supplies. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as fast-acting shunt switch triggered by comparator output. Use Value: −250 V VDS rating provides 25% margin above 200 V bus; 6 kV/µs dv/dt withstand prevents false triggering during line transients. | Use Scenario: Voltage feedback path switch in isolated flyback converter for remote sensing. IC Role / Device Role / Timing Role: Precision analog switch isolating optocoupler feedback loop during startup or fault conditions. Use Value: Low RDS(on) (≤4 Ω) minimizes voltage drop error in feedback divider; logic-level gate simplifies MCU-controlled enable sequencing. |
| Programmable Load Switch | Low-Frequency Inverter Stage |
Use Scenario: Controlled power-up of auxiliary rails in programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: High-side load switch enabling/disabling 24 V or 48 V subsystems via microcontroller GPIO. Use Value: −0.43 A rating matches typical PLC I/O module current draw; SOT-223 footprint supports compact board layout with thermal relief. | Use Scenario: Half-bridge high-side switch in 50/60 Hz AC inverters for battery backup systems. IC Role / Device Role / Timing Role: Low-frequency (≤1 kHz) high-voltage switch driving transformer primary with unidirectional current. Use Value: Robust body diode (IS = −0.43 A) handles reverse current during dead-time; low Qg reduces gate drive power in low-speed operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3PF50 | VDS = −500 V, RDS(on) = 6.5 Ω @ −10 V, higher Qg (22 nC) | Higher voltage margin but larger conduction loss and slower switching | Preferred when >300 V bus isolation is required; less suitable for logic-level drive due to higher VGS(th) (−2 to −4 V) |
| IRF9540NPBF | VDS = −100 V, RDS(on) = 0.2 Ω @ −10 V, lower voltage rating | Lower cost and better conduction efficiency, but insufficient for 200 V+ systems | Select only for ≤80 V DC applications; incompatible with 200 V bus protection or flyback feedback roles |
Compared with STP3PF50 and IRF9540NPBF, BSP317PE6327 uniquely balances −250 V rating, logic-level gate, and SOT-223 thermal performance-making it optimal for space-constrained, medium-voltage industrial control modules requiring direct MCU interfacing.
Availability
BSP317PE6327 is available at Aetrix Electronics and suitable for industrial power supply protection, high-voltage DC-DC feedback switching, and programmable load switching requiring stable component supply and long-term lifecycle support.
Supply support for BSP317PE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The BSP317PE6327 belongs to Infineon's SIPMOS™ small-signal transistor family, designed specifically for high-voltage, low-current switching in industrial power conversion and protection circuits where logic-level drive and dv/dt robustness are essential.
FAQ
Is BSP317PE6327 suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage of −1 to −2 V and guaranteed enhancement at −4.5 V VGS, the BSP317PE6327 fully turns on using standard 3.3 V GPIO outputs. Its low gate charge (≤15.1 nC) ensures fast switching without requiring external driver buffers in low-frequency applications.
What is the maximum safe operating temperature for continuous operation?
The device supports junction temperatures from −55 °C to +150 °C. For continuous operation at −0.43 A, ambient temperature must be limited to ≤70 °C when mounted on a 6 cm² copper area, per the derated ID vs. TA curve. Thermal resistance RthJA ranges from 48 to 115 K/W depending on PCB layout.
Can BSP317PE6327 replace N-channel MOSFETs in high-side configurations?
No-it is a P-channel device optimized for high-side switching without level-shifting circuitry. Unlike N-channel MOSFETs, it conducts when gate voltage is lower than source, making it inherently suited for high-side use. Substituting an N-channel part would require gate drive above the source potential, adding complexity.
Does the body diode support continuous reverse current in freewheeling mode?
Yes. The integrated body diode is rated for −0.43 A continuous forward current (IS) at 25 °C and −1.72 A pulsed (ISM). Its VSD of −0.84 to −1.2 V and trr of 92–138 ns allow reliable freewheeling in low-frequency (<100 kHz) DC-DC converters without external diode supplementation.
BSP317PE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 430mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 430mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 370µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 262 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP317PE6327 FAQ
1.How can I place an order for BSP317PE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP317PE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP317PE6327 reliable?
The price and inventory of BSP317PE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP317PE6327 is usually 5 days.
3.What payment methods are accepted for BSP317PE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP317PE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSP317PE6327?
BSP317PE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP317PE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP317PE6327?
For technical support, including BSP317PE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP317PE6327 requirements.
6.How does Aetrix verify that BSP317PE6327 is sourced from the original manufacturer or authorized distributors?
All BSP317PE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP317PE6327 meets industry standards.
7.What is the process for return or replacement of BSP317PE6327?
All BSP317PE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSP317PE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP317PE6327 part is unused and in its original packaging.
Return procedure for BSP317PE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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