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Infineon Technologies BSP317PE6327T
- Part No.:
- BSP317PE6327T
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP317PE6327T.pdf
- Description:
- MOSFET P-CH 250V 430MA SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:5,986
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Product details
Overview
BSP317PE6327T from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ small-signal MOSFET in SOT-223 package, rated for −250 V drain-source breakdown voltage, 4 Ω maximum RDS(on) at −10 V VGS, and −0.43 A continuous drain current. It features logic-level gate drive (VGS(th) = −1 to −2 V), 6 kV/µs dv/dt rating, and integrated body diode with 92–138 ns reverse recovery time - deployed in high-voltage DC-DC converter feedback switches and industrial relay drivers.
For engineers reviewing the BSP317PE6327T datasheet, BSP317PE6327T pinout, BSP317PE6327T application, or BSP317PE6327T equivalent, key selection criteria include verified −250 V blocking capability, thermal resistance RthJA of 48–115 K/W on PCB, gate plateau voltage of −2.8 V, and confirmed SOT-223 pin assignment with drain connected to pins 2 and 4.
Technical Context
This device operates as a high-voltage, low-current P-channel switching transistor optimized for logic-level gate control in space-constrained industrial power stages. Its −1.5 V typical gate threshold enables direct interfacing with 3.3 V or 5 V microcontroller outputs without level-shifting circuitry.
The MOSFET integrates a fast-recovery body diode (Qrr = 210–315 nC, trr = 92–138 ns) and exhibits robust dv/dt immunity (6 kV/µs), making it suitable for inductive load switching where voltage transients exceed 200 V under controlled di/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | −250 V - supports isolation in 200 V DC bus systems with 25 % safety margin |
| RDS(on) max | 4 Ω @ VGS = −10 V - delivers ≤180 mW conduction loss at −0.43 A |
| ID cont. | −0.43 A @ TA = 25 °C - suitable for low-power auxiliary supply and bias rail switching |
| VGS(th) | −1 to −2 V - ensures reliable turn-on with standard logic-level outputs |
| trr | 92–138 ns - limits switching losses during diode commutation in flyback snubbers |
| dv/dt Rating | 6 kV/µs - suppresses false triggering in high-noise motor control environments |
| Ptot | 1.8 W @ TA = 25 °C - requires minimal heatsinking on FR4 with 6 cm² copper pour |
Pinout & Package
SOT-223 package with exposed drain pad (pins 2 and 4 electrically common), standard 4-pin footprint, and JEDEC MS-012AC compliant outline. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (thermal and electrical connection).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Logic-level control input; requires ≤15.1 nC total gate charge for full turn-on |
| Pin 2 & Pin 4 | Drain | High-voltage output node; dual-pin layout improves thermal dissipation and current sharing |
| Pin 3 | Source | Reference node for gate drive; connects to system ground or negative rail in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with −4.5 V VGS; eliminates need for gate driver IC in 3.3 V/5 V systems |
| dv/dt rated | Withstands 6 kV/µs transient slew rates without spurious turn-on in noisy industrial settings |
| Integrated fast body diode | Reverse recovery time <140 ns and Qrr <320 nC enable efficient freewheeling in discontinuous conduction mode |
| Thermally enhanced SOT-223 | RthJA as low as 48 K/W with 6 cm² copper area - reduces thermal derating in compact layouts |
Applications
| Industrial Relay Driver | High-Voltage Bias Switch |
|---|---|
Use Scenario: Driving coil of 24 V/48 V industrial electromechanical relays in PLC I/O modules. IC Role / Device Role / Timing Role: High-side P-channel switch controlling relay coil current path with logic-level enable. Use Value: −250 V VDS rating prevents breakdown during relay coil flyback spikes up to −200 V. | Use Scenario: Enabling/disabling high-voltage bias rails (e.g., −150 V) in analog front-end instrumentation. IC Role / Device Role / Timing Role: Precision on/off control of negative bias supply with minimal leakage (IDSS ≤ −0.2 µA at 150 °C). Use Value: Ultra-low gate leakage (IGSS ≤ −100 nA) ensures stable bias voltage over temperature and time. |
| Flyback Snubber Switch | Low-Power DC-DC Feedback |
Use Scenario: Active snubbing of transformer leakage in isolated flyback converters operating at 65–100 kHz. IC Role / Device Role / Timing Role: Fast-turning P-channel switch clamping voltage overshoot across primary winding. Use Value: 92–138 ns trr and 6 kV/µs dv/dt rating minimize energy loss and EMI during snubbing transitions. | Use Scenario: Isolated feedback path control in medical-grade AC-DC adapters requiring reinforced insulation. IC Role / Device Role / Timing Role: Optocoupler-isolated secondary-side switch regulating primary controller via voltage divider. Use Value: Confirmed RDS(on) stability over −55 to +150 °C ensures consistent feedback accuracy across environmental stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD250N15N3G | 150 V VDS, 0.25 Ω RDS(on), TO-252 package - lower voltage rating but higher current capability | Not suitable for >180 V systems; better for 12–48 V industrial loads | Select only if system VDS peak remains ≤135 V and higher ID is required |
| BSP296P | −200 V VDS, 6 Ω RDS(on), same SOT-223 package - lower voltage rating, higher on-resistance | Acceptable for 100–150 V applications with relaxed thermal constraints | Choose when board space is fixed to SOT-223 and −200 V margin suffices |
Compared with BSP317PE6327T, IPD250N15N3G offers superior current handling but fails at −250 V operation, while BSP296P retains identical packaging and logic compatibility but sacrifices 25 % voltage margin and increases conduction loss by 50 %.
Availability
BSP317PE6327T is available at Aetrix Electronics and suitable for industrial relay drivers, high-voltage bias switches, and flyback snubber circuits requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BSP317PE6327T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The SIPMOS™ small-signal transistor product line targets high-voltage, low-current switching applications demanding logic-level compatibility, robust dv/dt immunity, and thermally efficient SMD packaging.
FAQ
Is BSP317PE6327T pin-compatible with BSP296P?
Yes - both use identical SOT-223 pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain. This allows drop-in replacement in existing layouts, though design verification of −250 V vs. −200 V rating and RDS(on) impact is required before substitution.
What is the maximum safe operating temperature for continuous operation?
The junction temperature must not exceed +150 °C. At ambient temperatures above 70 °C, derating applies: ID drops linearly from −0.43 A at 25 °C to −0.34 A at 70 °C, and power dissipation falls to 1.2 W at 100 °C per the published Ptot vs. TA curve.
Does BSP317PE6327T require a gate resistor for logic-level driving?
A gate resistor is recommended - typically 10–100 Ω - to dampen ringing and limit peak gate current during switching. With 15.1 nC total gate charge and fast rise/fall times (11.1–16.6 ns), uncontrolled edge rates may cause EMI or shoot-through in half-bridge configurations.
Can this MOSFET replace an N-channel device in high-side switching?
Yes - its P-channel architecture and logic-level VGS(th) make it suitable for high-side switching without floating gate drivers. However, source must connect to the positive rail, and load connects between drain and ground, reversing conventional N-channel placement and polarity assumptions.
BSP317PE6327T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 430mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 430mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 370µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 262 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP317PE6327T FAQ
1.How can I place an order for BSP317PE6327T through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP317PE6327T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP317PE6327T reliable?
The price and inventory of BSP317PE6327T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP317PE6327T is usually 5 days.
3.What payment methods are accepted for BSP317PE6327T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP317PE6327T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSP317PE6327T?
BSP317PE6327T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP317PE6327T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP317PE6327T?
For technical support, including BSP317PE6327T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP317PE6327T requirements.
6.How does Aetrix verify that BSP317PE6327T is sourced from the original manufacturer or authorized distributors?
All BSP317PE6327T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP317PE6327T meets industry standards.
7.What is the process for return or replacement of BSP317PE6327T?
All BSP317PE6327T units undergo pre-shipment inspection (PSI). If there is an issue with BSP317PE6327T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP317PE6327T part is unused and in its original packaging.
Return procedure for BSP317PE6327T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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