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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSP317PL6327HTSA1

Name: BSP317PL6327HTSA1
Brand: Infineon Technologies
SKU: BSP317PL6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSP317PL6327HTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: BSP317PL6327HTSA1.pdf

Description:: MOSFET P-CH 250V 430MA SOT223-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSP317PL6327HTSA1 from Infineon Technologies is a P-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET rated for −250 V drain-source voltage, 4 Ω R_DS(on) at −4.5 V gate drive, and −0.43 A continuous drain current in SOT-223 package. It features dv/dt ruggedness up to 6 kV/µs and integrated body diode with −0.43 A forward current capability, used in low-power high-voltage DC switching such as industrial sensor interface protection and isolated bias rail control.

For engineers reviewing the BSP317PL6327HTSA1 datasheet, BSP317PL6327HTSA1 pinout, BSP317PL6327HTSA1 application, or BSP317PL6327HTSA1 equivalent, key selection criteria include verified −250 V V_BRDSS rating, logic-level gate threshold (−1.5 V typ), R_DS(on) stability over temperature, SOA compliance at T_A = 70 °C, and SOT-223 thermal resistance (R_thJA = 48 K/W with 6 cm² copper).

Technical Context

This device operates as a normally-off P-channel switch requiring negative gate-to-source voltage for conduction. Its logic-level gate enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting, while its dv/dt rating ensures immunity to fast transient voltage spikes in inductive load switching.

Thermal performance is defined by junction-to-soldering-point resistance (R_thJS = 15–25 K/W) and validated safe operating area (SOA) curves up to 10 ms pulse width at T_A = 25 °C, supporting reliable operation in intermittent high-voltage switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	−250 V - Withstands sustained reverse drain-source voltage up to rated breakdown without avalanche conduction.
R_DS(on)	3.3–5 Ω @ V_GS = −4.5 V, I_D = −0.39 A - Confirmed on-resistance range enabling predictable power loss in low-current HV switching.
I_D (cont)	−0.43 A @ T_A = 25 °C - Maximum continuous drain current under standard PCB mounting conditions.
dv/dt Rating	6 kV/µs - Validated immunity to rapid voltage transients during switching of inductive loads.
V_GS(th)	−1 to −2 V - Gate threshold voltage window ensuring reliable turn-on with 3.3 V logic-level drive.
Q_g	−11.6 to −15.1 nC - Total gate charge defining required driver strength and switching speed trade-offs.
C_iss	210–262 pF @ V_DS = −25 V - Input capacitance determining gate drive loop stability and rise/fall time behavior.

Pinout & Package

SOT-223 package with exposed drain pad (Pin 2 and Pin 4 internally connected). Standard footprint supports thermal dissipation via soldered drain pad to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts logic-level negative voltage to enable conduction.
Pin 2 & 4	Drain	High-side connection point; electrically tied and thermally coupled to exposed pad for heat transfer.
Pin 3	Source	Reference node for gate drive and current return path; typically tied to system ground or positive rail in high-side configuration.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with V_GS ≤ −4.5 V, compatible with 3.3 V/5 V MCU GPIO without external level shifters.
dv/dt ruggedness	Rated 6 kV/µs per test condition (I_S = −0.43 A, V_DS = −200 V, di/dt = −200 A/µs), preventing false turn-on in noisy environments.
Integrated body diode	Forward voltage V_SD = −0.84 to −1.2 V @ I_F = −0.43 A, enabling freewheeling in inductive load circuits without external diode.
Thermal robustness	R_thJA = 48 K/W with 6 cm² copper area - enables 1.8 W power dissipation at T_A = 70 °C in standard layout.

Applications

Industrial Sensor Interface Protection

Isolated Bias Rail Control

Use Scenario: Protecting analog input stages of PLC modules from field-wiring faults and ESD-induced overvoltage events.

IC Role / Device Role / Timing Role: High-side disconnect switch placed between field connector and signal conditioning circuitry.

Use Value: −250 V blocking capability isolates downstream ICs from >200 V transients; logic-level gate allows direct MCU fault-response activation within <10 µs.

Use Scenario: Enabling/disabling auxiliary 12 V or 15 V bias rails in isolated power supplies for RS-485 transceivers or optocouplers.

IC Role / Device Role / Timing Role: Low-quiescent-current high-voltage switch controlling power delivery to secondary-side regulation circuitry.

Use Value: R_DS(on) ≤ 5 Ω limits dropout to <2.2 V at 0.4 A load; SOA curve validates safe 100 ms inrush handling during rail startup.

Low-Power HV Signal Switching

Microcontroller-Driven Relay Driver

Use Scenario: Routing reference voltages or calibration signals across multiple test channels in automated test equipment (ATE).

IC Role / Device Role / Timing Role: Precision analog switch with minimal channel crosstalk and leakage (<100 nA at 150 °C).

Use Value: I_DSS ≤ −0.2 µA at 150 °C ensures <1 LSB error in 16-bit DAC output paths; C_oss = 30–37 pF minimizes signal feedthrough.

Use Scenario: Driving coil of miniature 24 VDC electromagnetic relays in building automation controllers.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay drivers, reducing bounce and contact wear.

Use Value: Q_gd = −4 to −5.2 nC enables clean turn-off with <100 ns fall time; integrated diode clamps inductive kickback without external snubber.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD250N10N3G	100 V V_BRDSS, 2.5 mΩ R_DS(on), TO-252 package	Lower voltage rating; higher current capacity; unsuitable for >150 V systems	Select only when system max V_DS ≤ 80 V and thermal budget allows larger package.
DMN3026LFG-7	30 V V_BRDSS, 26 mΩ R_DS(on), SOT-23 package	Not rated for HV operation; limited to ≤24 V bias rails	Use only for ultra-low-voltage logic switching where footprint and cost outweigh voltage requirements.

Compared with IPD250N10N3G and DMN3026LFG-7, BSP317PL6327HTSA1 uniquely delivers −250 V blocking with logic-level gate compatibility in SOT-223 - filling a niche for compact, MCU-driven HV switching where alternatives either lack voltage rating or require external level shifting.

Availability

BSP317PL6327HTSA1 is available at Aetrix Electronics and suitable for industrial sensor interface protection, isolated bias rail control, and low-power HV signal switching requiring stable component supply and long-term manufacturability.

Supply support for BSP317PL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q standards.

The BSP317P belongs to Infineon's SIPMOS™ small-signal transistor family, designed specifically for reliable high-voltage logic-level switching in space-constrained industrial and automation equipment where thermal efficiency and transient immunity are critical.

FAQ

What is the maximum allowable gate-source voltage for BSP317PL6327HTSA1?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable logic-level drive, maintain V_GS between −4.5 V and −10 V to ensure full enhancement while staying within safe margin. Transient overshoot must be clamped below ±20 V using Zener or resistor-divider networks.

Can BSP317PL6327HTSA1 replace an N-channel MOSFET in high-side switching?

Yes - as a P-channel device, it is inherently suited for high-side switching without bootstrap circuitry. Unlike N-channel counterparts, it requires only a referenced negative gate drive relative to source, simplifying control in floating-rail applications such as isolated DC-DC bias sequencing.

How does the body diode performance affect design in inductive load applications?

The integrated body diode has V_SD = −0.84 to −1.2 V at −0.43 A and t_rr = 92–138 ns, enabling efficient freewheeling. Its Q_rr of 210–315 nC must be accounted for in snubberless designs, as excessive stored charge can increase switching losses and EMI during turn-on.

What PCB layout practices optimize thermal performance of BSP317PL6327HTSA1?

Maximize copper area connected to Pin 2/4 (drain) using ≥6 cm² of 70 µm thick FR4 copper on one layer, oriented vertically without forced airflow. Avoid thermal vias beneath the pad unless backed by internal ground planes; ensure solder mask opening matches pad dimensions to maximize solder volume and thermal transfer.

BSP317PL6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 430mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4Ohm @ 430mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 370µA

Gate Charge (Qg) (Max) @ Vgs:: 15.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 262 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-4-21

BSP317PL6327HTSA1 FAQ

1.How can I place an order for BSP317PL6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP317PL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP317PL6327HTSA1 reliable?

The price and inventory of BSP317PL6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP317PL6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSP317PL6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP317PL6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP317PL6327HTSA1?

BSP317PL6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP317PL6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP317PL6327HTSA1?

For technical support, including BSP317PL6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP317PL6327HTSA1 requirements.

6.How does Aetrix verify that BSP317PL6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSP317PL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP317PL6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSP317PL6327HTSA1?

All BSP317PL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP317PL6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP317PL6327HTSA1 part is unused and in its original packaging.

Return procedure for BSP317PL6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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