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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSP322PL6327HTSA1

Name: BSP322PL6327HTSA1
Brand: Infineon Technologies
SKU: BSP322PL6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSP322PL6327HTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: BSP322PL6327HTSA1.pdf

Description:: MOSFET P-CH 100V 1A SOT223-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSP322PL6327HTSA1 from Infineon Technologies is a P-channel enhancement-mode logic-level SIPMOS® small-signal MOSFET rated for -100 V V_DS, 1 A continuous drain current, and 800 mΩ R_DS(on) at V_GS = −10 V. It features avalanche ruggedness, AEC-Q101 qualification, and operates in automotive body control modules requiring robust low-side switching of resistive/inductive loads.

For engineers reviewing the BSP322PL6327HTSA1 datasheet, BSP322PL6327HTSA1 pinout, BSP322PL6327HTSA1 application, or BSP322PL6327HTSA1 equivalent, key selection criteria include its −2.0 to −1.0 V gate threshold voltage, 6 cm² PCB cooling requirement, integrated body diode with 47 ns t_rr, and SOT-223 package thermal resistance of 70 K/W with 6 cm² copper area.

Technical Context

This device implements a trench-based P-channel MOSFET architecture optimized for logic-level drive compatibility down to −4.5 V, enabling direct interfacing with 5 V or 3.3 V microcontroller GPIOs without level-shifting. Its avalanche-rated design supports unclamped inductive switching in automotive load-dump scenarios.

Thermal performance is defined for vertical mounting on FR4 PCBs with 6 cm² single-layer copper (70 µm) under still air; R_thJA drops from 115 K/W (minimal footprint) to 70 K/W with that layout. The integrated body diode exhibits 0.84–1.2 V forward drop at −1 A and 47 ns reverse recovery time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−100 V: Maximum blocking voltage for automotive 24 V systems with transient overvoltage margin.
R_DS(on) max	800 mΩ at V_GS = −10 V, I_D = −1 A: Ensures ≤0.8 W conduction loss at rated current.
V_GS(th)	−2.0 to −1.0 V: Enables reliable turn-on with standard logic-level outputs (e.g., STM32, PIC).
E_AS	55 mJ (single pulse): Supports energy absorption during inductive flyback without failure.
t_rr	47 ns: Limits switching losses and EMI in PWM-driven solenoid/relay drivers.
C_iss	372 pF max: Determines gate drive strength requirement for <10 ns rise/fall times.
R_thJA	70 K/W with 6 cm² copper: Requires defined PCB copper area for thermal compliance in enclosed modules.

Pinout & Package

Package: PG-SOT-223 - surface-mount, 4-pin variant with exposed drain pad (Pin 2) for thermal conduction. Mounting requires vertical orientation on FR4 PCB with ≥6 cm² copper pour connected to Pin 2.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Current return path for P-channel channel	Connected to system ground or higher-potential rail in high-side configuration.
Pin 2 (Drain)	Main power output terminal / thermal pad	Electrically and thermally tied to PCB copper area; must be routed for both current and heat dissipation.
Pin 3 (Gate)	Control input for channel modulation	High-impedance node; requires low-inductance gate resistor (e.g., 10–47 Ω) to damp ringing.
Pin 4 (Source)	Second source connection (common with Pin 1)	Redundant source bond wire; electrically tied to Pin 1 internally-must be connected to same net.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine bay and cabin modules per stress test requirements.
Logic-level gate drive	Turns fully on at V_GS = −4.5 V (R_DS(on) ≤ 1.0 Ω), eliminating need for external level shifters.
Avalanche energy rating	55 mJ single-pulse capability enables safe operation in unclamped inductive switching (e.g., fuel injectors).
Integrated body diode	Rated for −1.0 A continuous and −4.0 A pulsed forward current with 47 ns t_rr and 0.84 V V_SD.
Halogen-free & RoHS	Complies with IEC61249-2-21 and EU RoHS Directive; Pb-free plating compatible with lead-free reflow profiles.

Applications

Automotive Body Control Unit

Industrial Relay Driver

Use Scenario: Switching 12 V/24 V incandescent lamps, HVAC actuators, and door lock solenoids in BCM modules.

IC Role / Device Role / Timing Role: Low-side load switch with integrated protection against load dump and inductive kickback.

Use Value: Eliminates external flyback diode and reduces BOM count while maintaining AEC-Q101 reliability.

Use Scenario: Driving 24 V DC industrial relays controlling motor starters or safety interlocks.

IC Role / Device Role / Timing Role: Logic-compatible power switch with fast 6.5 ns rise time and 12.5 ns fall time for precise PWM timing.

Use Value: Enables 20 kHz+ PWM dimming without excessive switching loss due to low C_iss and Q_g.

LED Lighting Power Stage

Power Supply OR-ing Circuit

Use Scenario: Constant-current sink for high-brightness LED strings in commercial signage and headlamp modules.

IC Role / Device Role / Timing Role: Precision current-regulating switch with tight R_DS(on) tolerance (±20%) across temperature.

Use Value: Delivers stable LED brightness over −40 °C to +125 °C ambient without feedback compensation.

Use Scenario: Reverse-polarity protection and supply redundancy in dual-input 24 V power supplies.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode with low V_SD (0.84 V) and fast t_rr.

Use Value: Reduces forward voltage drop by >60% versus Schottky diodes, cutting conduction loss and heat generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	R_DS(on) = 48 mΩ @ −4.5 V (lower), but V_DS = −20 V (significantly lower voltage rating)	Suitable only for 5 V/12 V logic systems; not viable for 24 V automotive transients	Select only if operating voltage stays below 15 V and higher efficiency at low V_GS is critical.
IPD140N10N3GATMA1	V_DS = −100 V (same), but R_DS(on) = 14 mΩ @ −10 V (much lower), TO-252 package (larger footprint)	Requires larger PCB area and different thermal layout; not pin-compatible with SOT-223	Choose when <100 mΩ R_DS(on) is mandatory and board space allows DPAK mounting.

Compared with DMG2305UVT-7 and IPD140N10N3GATMA1, BSP322PL6327HTSA1 uniquely balances −100 V rating, SOT-223 compactness, logic-level drive, and AEC-Q101 qualification-making it optimal for space-constrained automotive modules where voltage margin and qualification outweigh ultra-low R_DS(on).

Availability

BSP322PL6327HTSA1 is available at Aetrix Electronics and suitable for automotive body control units, industrial relay drivers, and LED lighting power stages requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BSP322PL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial MOSFETs, with global manufacturing and quality certification aligned to ISO/TS 16949.

The SIPMOS® small-signal transistor product line delivers rugged, logic-compatible P- and N-channel MOSFETs engineered specifically for automotive body electronics and industrial control applications demanding AEC-Q101 reliability and defined thermal behavior.

FAQ

Is BSP322PL6327HTSA1 suitable for high-side switching configurations?

Yes-it is a P-channel MOSFET designed for high-side switching. With V_GS(th) between −2.0 V and −1.0 V, it turns on when gate voltage is pulled below source by ≥2 V. In 24 V systems, this requires a gate driver capable of sinking current to pull the gate toward ground while source sits at 24 V. Layout must minimize gate loop inductance to prevent oscillation.

What is the maximum allowable PCB copper area for thermal performance validation?

The datasheet specifies thermal resistance R_thJA = 70 K/W under defined conditions: vertical mounting on 40 mm × 40 mm × 1.5 mm FR4 PCB with exactly 6 cm² (one-layer, 70 µm thick) copper area connected to the drain pad (Pin 2). Exceeding this area yields marginal improvement; reducing it degrades thermal performance nonlinearly-designs must replicate this layout for guaranteed specs.

Does the integrated body diode support synchronous rectification?

No-the body diode is optimized for freewheeling and protection, not synchronous rectification. Its 47 ns t_rr and 0.84–1.2 V V_SD result in higher conduction and switching losses than discrete Schottky or GaN FETs used in active rectification. It is appropriate for clamp/freewheel paths in relay, solenoid, or lamp drivers-but not for high-frequency, high-efficiency DC-DC topologies.

How does avalanche rating impact real-world circuit design?

The 55 mJ single-pulse E_AS rating means the device can absorb defined inductive energy without failure during one unclamped event-e.g., relay coil de-energization with no external diode. Designers must ensure worst-case stored energy (½L·I²) remains below 55 mJ and limit repetitive events using snubbers or clamps. It is not intended for continuous avalanche operation.

BSP322PL6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 1A, 10V

Vgs(th) (Max) @ Id:: 1V @ 380µA

Gate Charge (Qg) (Max) @ Vgs:: 16.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 372 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-4-21

BSP322PL6327HTSA1 FAQ

1.How can I place an order for BSP322PL6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP322PL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP322PL6327HTSA1 reliable?

The price and inventory of BSP322PL6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP322PL6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSP322PL6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP322PL6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP322PL6327HTSA1?

BSP322PL6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP322PL6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP322PL6327HTSA1?

For technical support, including BSP322PL6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP322PL6327HTSA1 requirements.

6.How does Aetrix verify that BSP322PL6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSP322PL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP322PL6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSP322PL6327HTSA1?

All BSP322PL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP322PL6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP322PL6327HTSA1 part is unused and in its original packaging.

Return procedure for BSP322PL6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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