Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BSP324L6327HTSA1

Part No.:
BSP324L6327HTSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBSP324L6327HTSA1.pdf
Description:
MOSFET N-CH 400V 170MA SOT223-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,569

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BSP324L6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS power transistor in SOT-223 package, rated for 400 V drain-source breakdown voltage, 25 Ω RDS(on) at VGS = 10 V / ID = 0.17 A, and 1.8 W power dissipation at TA = 25 °C. It integrates a fast-recovery body diode (trr = 85–127 ns) and is AEC-Q101 qualified for automotive load switching.

For engineers reviewing the BSP324L6327HTSA1 datasheet, BSP324L6327HTSA1 pinout, BSP324L6327HTSA1 application, or BSP324L6327HTSA1 equivalent, key selection factors include its dv/dt rating (6 kV/µs), gate threshold voltage range (1.3–2.3 V), low gate charge (Qg = 4.54–5.9 nC), and thermal resistance (RthJA = 45–115 K/W depending on PCB layout).

Technical Context

This device operates as a single N-channel MOSFET switch with logic-level gate drive compatibility (VGS(th) ≤ 2.3 V), enabling direct interface with 3.3 V or 5 V microcontrollers. Its dv/dt immunity (6 kV/µs) and robust SOA support reliable operation in inductive load switching without external snubbers.

The integrated body diode exhibits low forward voltage (VSD = 0.8–1.2 V at IF = 0.17 A) and controlled reverse recovery (Qrr = 104–156 nC), making it suitable for freewheeling and flyback applications where diode conduction occurs during turn-off transitions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating400 V - supports off-state blocking in 24–48 V industrial control and automotive battery-fed circuits up to 320 V DC bus.
RDS(on)13.6–25 Ω @ VGS = 10 V - determines on-state power loss (Ploss ≈ I² × R) in low-current (<170 mA) switching loads.
ID Continuous0.17 A @ TA = 25 °C - defines maximum steady-state current under natural convection on standard FR4 PCB.
Qg4.54–5.9 nC - sets gate driver current requirement and switching speed; enables <100 ns turn-on with 6 Ω gate resistor.
trr85–127 ns - limits reverse recovery energy loss and EMI generation when used as freewheeling diode in inductive switching.
VGS(th)1.3–2.3 V - ensures full enhancement with 3.3 V logic; avoids partial turn-on in noisy environments due to tight threshold distribution.
Ptot1.8 W @ TA = 25 °C - constrains usable power envelope without heatsink; derates to 0.14 W at TA = 120 °C.

Pinout & Package

SOT-223 package with 4 terminals: pins 1–3 are Gate, Drain, Source respectively; pin 4 is Drain tab (soldered to PCB for thermal and electrical connection). Standard footprint per JEDEC TO-261AA.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)GateLogic-level input controlling channel conduction; requires <20 V absolute max; low input capacitance (Ciss = 103–154 pF).
Pin 2 (D)DrainMain high-side switching node; connected internally to metal tab (Pin 4); carries load current and withstands 400 V transients.
Pin 3 (S)SourceReference node for gate drive and current sensing; tied to system ground or low-side return path.
Pin 4 (D Tab)Drain Thermal PadPrimary thermal path to PCB copper; reduces RthJS to 16–25 K/W; must be soldered to ≥6 cm² copper area for rated Ptot.

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) ≤ 2.3 V enables direct MCU GPIO control without level-shifting, reducing BOM count in space-constrained designs.
dv/dt rated6 kV/µs immunity prevents false turn-on during fast voltage transients in motor drives and relay coils.
AEC-Q101 qualifiedValidated for automotive temperature range (−55 °C to +150 °C) and reliability stress tests, supporting under-hood use.
Integrated fast body diodeReverse recovery time trr = 85–127 ns and Qrr = 104–156 nC allow efficient freewheeling without external diode in low-power flyback or solenoid drivers.

Applications

Automotive Interior Lighting ControlIndustrial Sensor Power Switching

Use Scenario: PWM dimming of LED map lights and courtesy lamps in 12 V vehicle systems.

IC Role / Device Role / Timing Role: Low-side switch controlling current path to LED string; handles repetitive 100–1 kHz switching with minimal gate drive overhead.

Use Value: Logic-level VGS(th) ensures full turn-on from automotive MCU outputs; low RDS(on) minimizes thermal rise at 170 mA continuous load.

Use Scenario: Power gating of analog sensor modules (e.g., pressure, temp) in PLC I/O cards to reduce standby current.

IC Role / Device Role / Timing Role: High-side or low-side enable switch isolating sensor supply rail; activated infrequently but requiring robust surge tolerance.

Use Value: 400 V VDS rating provides margin against inductive kickback from nearby relays or solenoids on shared PCB.

Low-Power Flyback Converter Auxiliary SupplySmall-Signal Relay Driver

Use Scenario: Secondary-side synchronous rectification or primary-side auxiliary winding switch in <5 W offline adapters.

IC Role / Device Role / Timing Role: Freewheeling diode replacement using body diode during transformer reset phase; conducts reverse recovery current.

Use Value: Controlled Qrr (104–156 nC) and trr (85–127 ns) limit EMI and losses compared to standard PN diodes in 65–100 kHz operation.

Use Scenario: Driving 5–12 V coil relays in HVAC control panels and building automation nodes.

IC Role / Device Role / Timing Role: Low-side driver switching relay coil with inductive energy absorption via body diode.

Use Value: dv/dt rating (6 kV/µs) prevents spurious turn-on during relay contact bounce and coil voltage overshoot (>300 V).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BSP320L6327HTSA1Lower RDS(on) (10.5–16 Ω), same VDS (400 V), higher ID (0.2 A), identical SOT-223 package and pinout.Supports slightly higher continuous current; better thermal performance in same footprint.Select when >170 mA load current or lower conduction loss is required without changing layout.
IPB40N03S4L07ATMA1Higher current (40 A), lower RDS(on) (7.5 mΩ), TO-263 package, not pin-compatible; requires PCB redesign.Designed for high-power motor drives; unsuitable for space-constrained SOT-223 layouts.Consider only for new designs needing >1 A current; not a drop-in replacement.

Compared with BSP324L6327HTSA1, BSP320L6327HTSA1 offers improved conduction efficiency at same voltage class and form factor, while IPB40N03S4L07ATMA1 targets entirely different power tiers and packaging constraints-neither alters the core logic-level switching function but differs critically in scalability and integration readiness.

Availability

BSP324L6327HTSA1 is available at Aetrix Electronics and suitable for automotive interior lighting control, industrial sensor power switching, low-power flyback converter auxiliary supplies, and small-signal relay drivers requiring stable component supply across production lifecycles.

Supply support for BSP324L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC standards.

The BSP324 belongs to Infineon's SIPMOS logic-level power transistor product line, engineered for reliable low-current switching in automotive and industrial environments where gate drive simplicity, dv/dt immunity, and AEC-Q101 compliance are mandatory.

FAQ

Is BSP324L6327HTSA1 suitable for 24 V DC motor control?

No. With a continuous drain current rating of only 0.17 A at 25 °C ambient and RDS(on) ≥13.6 Ω, it cannot sustain typical 24 V brushed motor stall currents (>1 A). It is intended for signal-level switching-LEDs, sensors, relays-not motor windings.

What is the maximum gate resistor value for reliable 10 kHz PWM operation?

Based on Qg = 5.9 nC and desired 100 ns rise time, the maximum recommended gate resistor is 17 Ω (calculated as tr/0.35 × Ciss). Using >68 Ω risks incomplete turn-on within PWM period and excessive switching loss at 10 kHz.

Does the SOT-223 package require thermal vias under the drain tab?

Yes. The datasheet specifies RthJA = 45 K/W assumes 6 cm² copper area on a single-layer 70 µm FR4 PCB. Thermal vias (≥6×0.3 mm diameter) connecting the drain tab to inner or back-layer copper planes are essential to achieve this rating and prevent junction overheating above 100 °C.

Can BSP324L6327HTSA1 replace a BC337 transistor in a switching circuit?

No. BC337 is a 0.8 A NPN BJT with different biasing, gain, and saturation behavior. BSP324 is a 400 V MOSFET optimized for voltage-driven switching-not current amplification-and lacks the linear region needed for analog amplification or emitter-follower configurations.

BSP324L6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
400 V
Current - Continuous Drain (Id) @ 25°C:
170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
25Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:
2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs:
5.9 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
154 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223-4-21

BSP324L6327HTSA1 FAQ

1.How can I place an order for BSP324L6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP324L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP324L6327HTSA1 reliable?

The price and inventory of BSP324L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP324L6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSP324L6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP324L6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP324L6327HTSA1?

BSP324L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP324L6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP324L6327HTSA1?

For technical support, including BSP324L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP324L6327HTSA1 requirements.

6.How does Aetrix verify that BSP324L6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSP324L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP324L6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSP324L6327HTSA1?

All BSP324L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP324L6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP324L6327HTSA1 part is unused and in its original packaging.

Return procedure for BSP324L6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSP324L6327HTSA1 Tags

  • BSP324L6327HTSA1
  • BSP324L6327HTSA1 PDF
  • BSP324L6327HTSA1 Datasheet
  • BSP324L6327HTSA1 Specifications
  • BSP324L6327HTSA1 Images
  • Infineon Technologies
  • Infineon Technologies BSP324L6327HTSA1
  • Buy BSP324L6327HTSA1
  • BSP324L6327HTSA1 Price
  • BSP324L6327HTSA1 Distributor
  • BSP324L6327HTSA1 Supplier
  • BSP324L6327HTSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER