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Infineon Technologies BSP372L6327HTSA1
- Part No.:
- BSP372L6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP372L6327HTSA1.pdf
- Description:
- MOSFET N-CH 100V 1.7A SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:7,366
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Product details
Overview
BSP372L6327HTSA1 from Infineon Technologies is an N-channel logic-level SIPMOS® small-signal power MOSFET in PG-SOT223 package, rated for 100 V VDS, 1.7 A continuous drain current, and 0.31 Ω RDS(on) at VGS = 5 V. It features avalanche-rated ruggedness, ±14 V gate-source voltage rating, and AEC-Q101 qualification for automotive use.
For engineers reviewing the BSP372L6327HTSA1 datasheet, BSP372L6327HTSA1 pinout, BSP372L6327HTSA1 application, or BSP372L6327HTSA1 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 0.8–2.0 V), low RDS(on) at 5 V, integrated body diode with trr = 65 ns, and thermal resistance RthJA ≤ 70 K/W on standard PCB layout.
Technical Context
This device operates in enhancement mode with a threshold voltage range of 0.8–2.0 V, enabling direct drive from 3.3 V or 5 V microcontrollers without level-shifting. Its SIPMOS® process delivers low gate charge and fast switching: td(on) = 20–30 ns, tr = 35–55 ns, and Ciss = 415–520 pF at 25 V.
The integrated body diode supports bidirectional current flow with VSD = 0.85–1.1 V at IF = 1.7 A and reverse recovery charge Qrr = 0.11 μC, making it suitable for flyback, buck, and half-bridge topologies requiring controlled commutation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 24 V and 48 V industrial bus systems with margin against transients |
| ID (continuous) | 1.7 A at TA = 28 °C - enables compact load switching up to ~20 W with minimal heatsinking |
| RDS(on) | 0.24–0.31 Ω at VGS = 5 V - ensures <1 W conduction loss at full current under logic-level drive |
| VGS(th) | 0.8–2.0 V - guarantees turn-on with 3.3 V GPIOs and robust noise immunity |
| EAS | 45 mJ at Tj = 25 °C - provides single-pulse avalanche energy handling for inductive load interruption |
| Ciss | 415–520 pF - limits gate drive power requirement and enables >1 MHz switching in optimized layouts |
| trr | 65 ns - reduces switching losses and EMI in synchronous rectification and PWM control |
Pinout & Package
PG-SOT223 package with exposed drain pad for thermal performance; 4-pin configuration with dual drain terminals for current sharing and reduced parasitic inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | Control input; accepts logic-level voltages; requires no external level shifter for 3.3 V/5 V MCU drive |
| Pin 2 | Drain (D) | Main high-side or low-side current path; connected to exposed pad for thermal conduction |
| Pin 3 | Source (S) | Reference node for gate drive and current sensing; ties to ground or low-side return path |
| Pin 4 | Drain (D) | Second drain terminal-paralleled with Pin 2 to halve effective bondwire inductance and improve SOA |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V, compatible with standard microcontroller outputs |
| Avalanche-rated | Guaranteed single-pulse EAS = 45 mJ supports reliable operation in inductive switching without snubbers |
| AEC-Q101 qualified | Validated for automotive applications including body electronics and power distribution modules |
| Low thermal resistance | RthJA ≤ 70 K/W on 40 mm × 40 mm PCB with 6 cm² copper - simplifies thermal design in space-constrained modules |
| Integrated body diode | VSD = 0.85 V typ at 1.7 A enables efficient freewheeling without external diode in DC-DC converters |
Applications
| Automotive Body Control Module | Industrial 24 V Load Switch |
|---|---|
Use Scenario: Driving solenoids, relays, and LED arrays in door modules and lighting control units. IC Role / Device Role / Timing Role: Low-side switch with integrated diode for inductive kickback suppression and fast turn-off. Use Value: Eliminates need for external flyback diode; VGS(th) tolerance ensures reliable activation across battery voltage range (9–16 V). | Use Scenario: Remote ON/OFF control of sensors, actuators, and fieldbus peripherals in factory automation. IC Role / Device Role / Timing Role: High-reliability load switch with overtemperature and avalanche protection. Use Value: RDS(on) stability over temperature and AEC-Q101 qualification ensure long-term field reliability in uncontrolled environments. |
| USB-C Power Delivery Sink | Medical Portable Equipment Power Path |
Use Scenario: Input power path management for 5–20 V USB PD sink circuits with dynamic voltage negotiation. IC Role / Device Role / Timing Role: Reverse-voltage protected, low-RDS(on) pass transistor with fast switching for fault isolation. Use Value: Logic-level gate allows direct control by PD controller; trr = 65 ns minimizes cross-conduction risk during hot-swap events. | Use Scenario: Battery-to-load power gating in portable diagnostic devices requiring low standby leakage and high safety margin. IC Role / Device Role / Timing Role: Always-on, low-IDSS (<100 nA at 125 °C) power switch with medical-grade reliability. Use Value: IDSS ≤ 0.1 μA at 125 °C prevents battery drain during multi-week standby; RoHS-compliant plating meets IEC 60601-1 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60Z | 600 V VDS, higher RDS(on) (12 Ω), not logic-level (VGS(th) = 2–4 V) | Designed for high-voltage SMPS primary side, not low-voltage load switching | Select only if higher breakdown voltage is required and gate drive can support ≥4 V threshold |
| DMN3025LFG-7 | 30 V VDS, lower RDS(on) (22 mΩ), same logic-level drive (VGS(th) = 0.5–1.2 V) | Optimized for 5–12 V consumer power rails; insufficient for 24 V+ industrial transients | Prefer for 3.3/5 V embedded systems where VDS ≤ 30 V suffices and ultra-low RDS(on) is critical |
Compared with STP1NK60Z and DMN3025LFG-7, BSP372L6327HTSA1 uniquely balances 100 V capability, logic-level drive, and automotive qualification-making it optimal for 24 V/48 V automotive and industrial load switches where both voltage margin and MCU compatibility are essential.
Availability
BSP372L6327HTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V load switching, and USB-C power delivery sink designs requiring stable component supply and long lifecycle support.
Supply support for BSP372L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.
This part belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered for high-reliability, logic-compatible switching in automotive and industrial power control applications.
FAQ
Is BSP372L6327HTSA1 suitable for 3.3 V microcontroller gate drive?
Yes. With VGS(th) ranging from 0.8 V to 2.0 V and guaranteed RDS(on) ≤ 0.31 Ω at VGS = 5 V, it achieves full enhancement using standard 3.3 V GPIOs. Measured gfs = 3.7 S at ID = 1.7 A confirms strong transconductance under low-voltage bias.
What is the maximum safe operating junction temperature?
The absolute maximum junction temperature is +150 °C, validated per AEC-Q101 stress testing. Derating curves show Ptot drops linearly above 25 °C ambient, reaching 0 W at 120 °C on standard PCB - consistent with RthJA ≤ 70 K/W specification.
Does this MOSFET include an integrated body diode?
Yes. The device integrates a monolithic body diode with VSD = 0.85–1.1 V at IF = 1.7 A and trr = 65 ns at diF/dt = 100 A/μs. This enables freewheeling in buck converters and inductive load driving without external diodes.
How does avalanche rating impact real-world reliability?
EAS = 45 mJ at Tj = 25 °C means the device withstands one 25 V, 1.7 A inductive energy pulse without failure. This protects against relay coil collapse, motor stall events, and cable disconnect transients in automotive and industrial environments.
BSP372L6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 310mOhm @ 1.7A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±14V
- Input Capacitance (Ciss) (Max) @ Vds:
- 520 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP372L6327HTSA1 FAQ
1.How can I place an order for BSP372L6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP372L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP372L6327HTSA1 reliable?
The price and inventory of BSP372L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP372L6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BSP372L6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP372L6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSP372L6327HTSA1?
BSP372L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP372L6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP372L6327HTSA1?
For technical support, including BSP372L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP372L6327HTSA1 requirements.
6.How does Aetrix verify that BSP372L6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSP372L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP372L6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSP372L6327HTSA1?
All BSP372L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP372L6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP372L6327HTSA1 part is unused and in its original packaging.
Return procedure for BSP372L6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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