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Infineon Technologies BSP373 E6327

Part No.:
BSP373 E6327
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBSP373 E6327.pdf
Description:
MOSFET N-CH 100V 1.7A SOT223-4
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,042

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Product details

Overview

BSP373 E6327 from Infineon Technologies is an N-channel enhancement-mode SIPMOS® small-signal power MOSFET rated for 100 V drain-source voltage, 1.7 A continuous drain current, and 0.3 Ω maximum RDS(on) at VGS = 10 V. It features avalanche energy rating (45 mJ), AEC-Q101 qualification, and is housed in PG-SOT223 package with G-D-S-D pinout - used in automotive load switching and industrial DC-DC converter high-side control.

For engineers reviewing the BSP373 E6327 datasheet, BSP373 E6327 pinout, BSP373 E6327 application, or BSP373 E6327 equivalent, key selection criteria include its 2.1–4.0 V gate threshold voltage, 1.5–2.8 S transconductance, 400–550 pF input capacitance, and -55 °C to +150 °C operating junction temperature range.

Technical Context

This MOSFET operates in enhancement mode with a silicon-based SIPMOS® structure optimized for fast switching and robust unclamped inductive switching (UIS) performance. Its dual-drain configuration supports higher current handling in SOT223 footprint while maintaining low thermal resistance (RthJA ≤ 70 K/W).

The device integrates an intrinsic body diode with 1.7 A continuous forward current capability and 0.8–1.1 V forward voltage at 1.7 A, enabling synchronous rectification and flyback snubbing without external diodes in compact DC-DC topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - supports 48 V automotive systems and 24 V industrial rails with margin against transients
ID (continuous)1.7 A at TA = 28 °C - enables use in medium-power switching nodes without heatsink
RDS(on) max0.3 Ω at VGS = 10 V - limits conduction loss to ≤ 0.86 W at full load
VGS(th)2.1–4.0 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers
EAS45 mJ - withstands single-pulse inductive energy in relay/valve driver applications
Ciss400–550 pF - determines gate drive strength requirement (~0.55 nC total gate charge implied)
Tj range-55 °C to +150 °C - qualified for under-hood automotive and industrial ambient environments

Pinout & Package

Package: PG-SOT223 (standardized JEDEC TO-261AA variant with exposed drain pad for thermal relief). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain configuration).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl terminal; requires ≥2.1 V to initiate conduction; sensitive to ESD (±20 V max VGS)
Pin 2DrainMain current path output; electrically tied to Pin 4; connects to high-side load or switching node
Pin 3SourceReference node for gate drive; common return for load current; ties to ground or low-side switch
Pin 4DrainSecond drain terminal; paralleled with Pin 2 to reduce package inductance and improve thermal spreading

Key Features

FeatureDesign Value
Avalanche-rated operation45 mJ single-pulse energy handling enables robustness in inductive load switching without external clamping
AEC-Q101 qualifiedValidated for automotive electronics per stress test requirements (HTOL, TC, HTRB, etc.)
Dual-drain SOT223Two drain pins reduce source inductance and improve thermal dissipation vs. standard SOT223
Low RDS(on) tempcoRDS(on) increases only ~25% from 25 °C to 125 °C - maintains predictable conduction loss across temperature
Integrated body diode1.7 A continuous / 6.8 A pulsed reverse diode with 0.8–1.1 V VSD - supports freewheeling in buck or flyback converters

Applications

Automotive Door ModuleIndustrial PLC Output Stage

Use Scenario: Driving 12 V solenoid locks and window lift motors in centralized door control units.

IC Role / Device Role / Timing Role: High-side load switch controlling up to 1.5 A resistive/inductive loads with PWM dimming capability.

Use Value: Avalanche rating absorbs back-EMF from motor commutation; AEC-Q101 compliance ensures reliability over 15-year vehicle lifetime.

Use Scenario: Solid-state replacement for electromechanical relays in 24 V DC digital output modules.

IC Role / Device Role / Timing Role: Low-side or high-side switching element interfacing microcontroller GPIO to field actuators.

Use Value: 0.3 Ω RDS(on) minimizes self-heating at 1.7 A; dual-drain layout improves long-term contact reliability under thermal cycling.

DC-DC Converter Sync RectifierLED Driver Current Switch

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V flyback converters for infotainment systems.

IC Role / Device Role / Timing Role: Fast-turning MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: 10–15 ns turn-on delay and 30–45 ns rise time enable precise gate timing alignment with primary-side controller.

Use Scenario: Constant-current switching in automotive interior LED lighting with PWM dimming.

IC Role / Device Role / Timing Role: Low-side current sink modulating LED string current up to 1.7 A.

Use Value: Tight VGS(th) distribution (2.1–4.0 V) ensures consistent turn-on across production batches and temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP1NK60ZFP600 V VDS, 1.15 A ID, 11 Ω RDS(on) - higher voltage rating but lower current and much higher on-resistanceSuitable for high-voltage flyback snubbers; not recommended for 12/24 V load switching due to excessive conduction lossSelect only if >400 V blocking is required; otherwise insufficient current capability for BSP373's target use cases
DMN3025LFG-730 V VDS, 4.2 A ID, 25 mΩ RDS(on) - lower voltage rating but superior RDS(on) and current handlingOptimized for 5–12 V logic-level applications like USB-C PD or portable battery managementUse where system voltage ≤ 20 V and ultra-low on-resistance is critical; avoid in 48 V or automotive 12 V transient-prone environments

Compared with STP1NK60ZFP and DMN3025LFG-7, the BSP373 E6327 uniquely balances 100 V ruggedness, 1.7 A current, and 0.3 Ω RDS(on) in automotive-qualified SOT223 - making it optimal for 12/24 V load switching where both voltage margin and thermal efficiency matter.

Availability

BSP373 E6327 is available at Aetrix Electronics and suitable for automotive door modules, industrial PLC output stages, DC-DC converter synchronous rectifiers, and LED driver current switches requiring stable component supply and AEC-Q101 assurance.

Supply support for BSP373 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

The BSP373 belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered for high-reliability switching in automotive and industrial environments where avalanche robustness and temperature stability are critical.

FAQ

Is BSP373 E6327 suitable for 5 V logic-level gate drive?

Yes - its gate threshold voltage range of 2.1–4.0 V ensures reliable turn-on with standard 5 V microcontroller outputs. At VGS = 5 V, RDS(on) is typically 0.22 Ω (vs. 0.16 Ω at 10 V), delivering sufficient performance for most 12 V load-switching applications without requiring level-shifting circuitry.

What is the thermal performance of BSP373 E6327 on a standard PCB?

With a 40 mm × 40 mm × 1.5 mm epoxy PCB and 6 cm² copper area for drain connection, its junction-to-ambient thermal resistance is ≤ 70 K/W. At 1.7 A and 0.3 Ω RDS(on), power dissipation is ~0.86 W, resulting in ~60 K temperature rise above ambient - well within its -55 °C to +150 °C Tj limit.

Does BSP373 E6327 include integrated ESD protection?

No - it lacks on-chip ESD protection diodes. The absolute maximum gate-source voltage is ±20 V, and gate oxide is susceptible to damage from static discharge. External 10 kΩ series gate resistor and TVS clamp (e.g., PESD5V0S1BA) are recommended in production designs handling manual assembly or connector mating.

Can BSP373 E6327 replace a mechanical relay in automotive applications?

Yes - its 45 mJ avalanche energy rating and AEC-Q101 qualification make it suitable for replacing 12 V/1.5 A electromechanical relays in door modules and seat controls. Unlike relays, it offers silent operation, no contact wear, and sub-microsecond switching - though external flyback protection remains necessary for highly inductive loads.

BSP373 E6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
300mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
550 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223-4

BSP373 E6327 FAQ

1.How can I place an order for BSP373 E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP373 E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP373 E6327 reliable?

The price and inventory of BSP373 E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP373 E6327 is usually 5 days.

3.What payment methods are accepted for BSP373 E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP373 E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP373 E6327?

BSP373 E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP373 E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP373 E6327?

For technical support, including BSP373 E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP373 E6327 requirements.

6.How does Aetrix verify that BSP373 E6327 is sourced from the original manufacturer or authorized distributors?

All BSP373 E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP373 E6327 meets industry standards.

7.What is the process for return or replacement of BSP373 E6327?

All BSP373 E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSP373 E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP373 E6327 part is unused and in its original packaging.

Return procedure for BSP373 E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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