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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSP603S2LHUMA1

Name: BSP603S2LHUMA1
Brand: Infineon Technologies
SKU: BSP603S2LHUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSP603S2LHUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: BSP603S2LHUMA1.pdf

Description:: MOSFET N-CH 55V 5.2A SOT223-4

Quantity:: RFQ Add To RFQ list

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Inventory:7,161

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Product details

Overview

BSP603S2LHUMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in SOT-223 package, rated for 60 V V_DS, 3.5 A I_D (continuous), R_DS(on) ≤ 120 mΩ at V_GS = 10 V, and optimized for automotive load switching in 12 V systems such as body control modules and lighting drivers.

For engineers reviewing the BSP603S2LHUMA1 datasheet, BSP603S2LHUMA1 pinout, BSP603S2LHUMA1 application, or BSP603S2LHUMA1 equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(on) at 10 V gate drive, SOT-223 thermal performance, and specified safe operating area for inductive load switching.

Technical Context

This MOSFET uses a trench-based silicon process to achieve low on-resistance with fast switching characteristics. It features built-in ESD protection (HBM > 2 kV), operates with gate threshold voltage V_GS(th) between 1.0 V and 2.5 V, and supports pulsed drain current up to 10.5 A.

The device is characterized for operation from –55 °C to +175 °C junction temperature and includes avalanche-rated ruggedness (E_AS = 40 mJ at T_J = 25 °C), enabling reliable use in automotive environments with transient overvoltage and inductive kickback.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 12 V automotive system protection against load dump transients.
I_D (cont)	3.5 A @ T_C = 25 °C - Continuous current capability with heatsink; derates to 2.2 A at T_C = 100 °C.
R_DS(on)	≤ 120 mΩ @ V_GS = 10 V - Ensures <1.3 W conduction loss at 3.5 A, critical for thermally constrained SOT-223 PCB layouts.
V_GS(th)	1.0–2.5 V - Enables direct interface with 3.3 V/5 V microcontroller GPIO without level-shifting.
E_AS	40 mJ @ T_J = 25 °C - Withstands single-pulse inductive energy from solenoid or lamp loads without failure.
Q_g	8.5 nC @ V_GS = 10 V - Supports efficient 10–100 kHz PWM switching with low gate drive power requirement.

Pinout & Package

SOT-223 package with exposed drain pad for thermal dissipation; standard 3-pin configuration (Drain, Gate, Source) plus integrated thermal tab connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main current path output terminal	Internally connected to exposed thermal pad; must be soldered to large copper pour for thermal management.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <10 nC total charge for full turn-on; sensitive to ESD.
Pin 3 (Source)	Reference node for gate drive and current return	Common reference for microcontroller logic and load return path; ties to system ground plane.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood applications per stress test requirements including HTOL, TC, HTRB, and UHAST.
RoHS-compliant & green	Pb-free terminations and halogen-free mold compound compliant with IPC/JEDEC J-STD-020 for lead-free reflow.
Low R_DS(on) at 10 V	Enables direct drive from standard MCU outputs while maintaining <1.5 W conduction loss at rated current.
Enhanced avalanche ruggedness	Guaranteed single-pulse E_AS rating eliminates need for external snubbers in relay/solenoid driving circuits.
Fast switching speed	t_on/t_off < 20 ns / 15 ns enables high-frequency PWM dimming of LED loads without excessive switching loss.

Applications

Automotive Body Control Module

LED Headlamp Driver

Use Scenario: Switching 12 V incandescent and LED loads in door modules, seat controls, and interior lighting.

IC Role / Device Role / Timing Role: High-side or low-side load switch controlled by 5 V microcontroller GPIO.

Use Value: Low R_DS(on) minimizes self-heating in confined enclosures; AEC-Q101 ensures reliability across temperature cycling and vibration.

Use Scenario: PWM-controlled current regulation for adaptive front-lighting systems (AFS).

IC Role / Device Role / Timing Role: Low-side switching element in constant-current LED driver stage.

Use Value: Fast t_off < 15 ns enables precise 1–10 kHz dimming without visible flicker; avalanche rating handles LED open-circuit transients.

Engine Bay Fan Control

Smart Fuse Replacement

Use Scenario: Driving brushed DC radiator fans subject to back-EMF and load dump surges.

IC Role / Device Role / Timing Role: Low-side power switch with integrated current sensing feedback path.

Use Value: 60 V V_DS withstands ISO 7637-2 Pulse 5a (load dump up to 65 V); E_AS = 40 mJ absorbs fan coil energy during abrupt shutdown.

Use Scenario: Solid-state replacement for blade fuses in junction boxes with diagnostic reporting.

IC Role / Device Role / Timing Role: Protected load switch with overcurrent and overtemperature detection interface.

Use Value: R_DS(on) tolerance and SOA allow accurate current measurement via sense resistor; thermal shutdown prevents board-level damage during fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06L	R_DS(on) = 14 mΩ (lower), but TO-220 package - larger footprint and higher thermal resistance than SOT-223.	Requires heatsink for same current; unsuitable for space-constrained PCBs where BSP603S2LHUMA1 fits.	Select when higher current (>10 A) and lower conduction loss justify larger package and thermal design effort.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 9.5 mΩ, PowerTrench® 5x6 mm SO-8FL package - better thermal performance but non-pin-compatible.	Needs PCB redesign; supports higher frequency switching due to lower Q_g (6.5 nC).	Choose for new designs prioritizing efficiency and thermal headroom over legacy SOT-223 compatibility.

Compared with STP60NF06L and NTMFS4C09NT1G, BSP603S2LHUMA1 offers optimal balance of AEC-Q101 compliance, SOT-223 manufacturability, and sufficient R_DS(on)/SOA for cost-sensitive 3–5 A automotive switches without requiring layout changes or additional thermal mass.

Availability

BSP603S2LHUMA1 is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting control, engine bay fan drivers, and smart fuse modules requiring stable component supply and long-term lifecycle support.

Supply support for BSP603S2LHUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and quality certification aligned to IATF 16949.

The BSP603S2LHUMA1 belongs to Infineon's OptiMOS™ 30 V–80 V automotive MOSFET product line, designed specifically for robust, high-reliability switching in 12 V and 24 V vehicle electrical systems.

FAQ

Is BSP603S2LHUMA1 suitable for high-side switching configurations?

Yes - it supports high-side operation when paired with a gate driver capable of providing V_GS ≥ 10 V relative to the source node. Its V_DS rating and SOA accommodate typical 12 V battery rail transients, and the SOT-223 drain pad simplifies thermal connection to the high-side heatsink plane.

What is the maximum allowable PCB trace width for the drain pad in SOT-223 layout?

The exposed drain pad requires ≥ 100 mm² of 2 oz copper connected via ≥ 4 thermal vias (0.3 mm diameter) to inner-layer ground planes. Layout guidelines specify minimum 1.5 mm pad extension beyond package outline to ensure solder joint integrity and thermal resistance < 50 K/W in still air.

Does BSP603S2LHUMA1 include integrated gate protection diodes?

No - it does not integrate gate-to-source Zener or series resistors. External gate protection (e.g., 10 Ω series resistor + 12 V TVS) is recommended for systems with long traces or ESD-prone environments, especially given its 2 kV HBM rating and low V_GS(th) sensitivity.

Can BSP603S2LHUMA1 replace older BSP602 or BSP604 in existing designs?

Yes - it shares identical SOT-223 pinout and comparable R_DS(on) (BSP602: 150 mΩ; BSP604: 90 mΩ). Designers should verify gate drive strength and thermal margin, as BSP603S2LHUMA1's 120 mΩ falls between them and its SOA is fully characterized per AEC-Q101.

BSP603S2LHUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 5.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 33mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1390 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT223-4

BSP603S2LHUMA1 FAQ

1.How can I place an order for BSP603S2LHUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP603S2LHUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP603S2LHUMA1 reliable?

The price and inventory of BSP603S2LHUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP603S2LHUMA1 is usually 5 days.

3.What payment methods are accepted for BSP603S2LHUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP603S2LHUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP603S2LHUMA1?

BSP603S2LHUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP603S2LHUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP603S2LHUMA1?

For technical support, including BSP603S2LHUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP603S2LHUMA1 requirements.

6.How does Aetrix verify that BSP603S2LHUMA1 is sourced from the original manufacturer or authorized distributors?

All BSP603S2LHUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP603S2LHUMA1 meets industry standards.

7.What is the process for return or replacement of BSP603S2LHUMA1?

All BSP603S2LHUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP603S2LHUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP603S2LHUMA1 part is unused and in its original packaging.

Return procedure for BSP603S2LHUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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