Infineon Technologies BSP88L6327HTSA1

Overview

BSP88L6327HTSA1 from Infineon Technologies is an N-channel logic-level enhancement-mode SIPMOS small-signal transistor in SOT-223 package, rated for 240 V V_DS, 0.32 A continuous drain current, and 8 Ω R_DS(on) at V_GS = 4.5 V. It serves as a low-voltage gate-driven high-side switch in industrial power supplies and LED drivers where fast turn-on with 0.6–1.2 V V_GS(th) is critical.

For engineers reviewing the BSP88L6327HTSA1 datasheet, BSP88L6327HTSA1 pinout, BSP88L6327HTSA1 application, or BSP88L6327HTSA1 equivalent, key selection criteria include its 240 V breakdown rating, logic-level gate compatibility down to 2.8 V, thermal resistance ≤72 K/W, integrated body diode with 1.05 V forward drop, and SOT-223 thermal performance under pulsed loads up to 1.28 A.

Technical Context

This device operates as a single N-channel MOSFET with enhancement-mode behavior requiring positive gate bias for conduction. Its logic-level threshold (0.6–1.2 V) enables direct drive from microcontrollers and low-voltage logic without level-shifting circuitry.

The SOT-223 package features a thermally enhanced drain pad connected to Pin 2 and Pin 4, supporting 1.7 W power dissipation at 25 °C ambient and junction temperatures up to +150 °C. Dynamic parameters include 80 pF C_iss, 15 pF C_oss, and 8 ns typical turn-on delay under 30 V/0.28 A switching conditions.

Key Specifications

Pinout & Package

SOT-223 package with exposed drain pad (Pins 2 and 4 internally connected), standard 4-pin footprint (G-D-S-D), and JEDEC TO-261AA outline. Thermal pad must be soldered to PCB for rated power handling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with BSP89L6327HTSA1, this part trades voltage headroom for identical thermal and drive characteristics; versus DMN2004LK3-7, it prioritizes high-voltage capability over low-R_DS(on), making it unsuitable for low-voltage, high-current roles but ideal for industrial 24–48 V systems requiring robust transients.

Availability

BSP88L6327HTSA1 is available at Aetrix Electronics and suitable for LED driver design, industrial relay interfacing, microcontroller power sequencing, and low-power sensor domain isolation requiring stable component supply across production lifecycles.

Supply support for BSP88L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's SIPMOS® small-signal transistor product line, engineered for logic-compatible, high-voltage switching in space-constrained industrial and lighting applications where thermal efficiency and gate-drive simplicity are critical.

FAQ

Is BSP88L6327HTSA1 suitable for 24 V automotive applications?

No - while rated for −55 to +150 °C junction temperature, it lacks AEC-Q101 qualification and has no automotive-specific screening, test reports, or failure-in-time (FIT) data. It is intended for industrial and commercial use only; automotive designs require AEC-Q101-certified alternatives such as BUK9Y2R5-40E.

What is the maximum safe gate-source voltage for continuous operation?

The absolute maximum V_GS is ±20 V per datasheet ratings. For reliable long-term operation, gate drive should be limited to ≤15 V to avoid oxide stress and ensure >10-year lifetime under thermal cycling. Exceeding 15 V increases risk of gate rupture, especially at elevated temperatures.

Can BSP88L6327HTSA1 replace a bipolar transistor in a relay driver?

Yes - its 0.32 A continuous current and 1.28 A pulsed rating match typical 24 VDC relay coils (e.g., 100–300 mW). Unlike BJTs, it requires no base resistor, offers lower saturation voltage than V_CE(sat), and eliminates base current loading on MCU pins, simplifying layout and firmware.

Does the SOT-223 package require thermal vias under the drain pad?

Thermal vias are strongly recommended: minimum 4×0.3 mm vias spaced evenly under the exposed drain pad, filled or capped, connecting to inner-layer or backside copper planes. Without vias, R_thJA degrades beyond 72 K/W, limiting usable current to ≤0.2 A at 60 °C ambient per thermal simulation data.