Infineon Technologies BSP89 E6327

Overview

BSP89 E6327 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS small-signal transistor in PG-SOT223 package, rated for 240 V V_DS, 0.35 A continuous drain current at 25°C, and 4.2–6 Ω R_DS(on) at V_GS = 10 V. It integrates a fast-recovery body diode (t_rr = 67–100 ns) and is dv/dt rated to 6 kV/µs, commonly used in low-power DC-DC converter high-side switches and LED driver load control.

For engineers reviewing the BSP89 E6327 datasheet, BSP89 E6327 pinout, BSP89 E6327 application, or BSP89 E6327 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 0.8–1.8 V), thermal resistance (R_thJS = 25 K/W), reverse diode forward voltage (V_SD = 0.85–1.2 V), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This device operates as a single N-channel MOSFET with enhancement-mode threshold behavior and integrated body diode. Its logic-level gate enables direct interface with 3.3 V/5 V microcontrollers without level-shifting, while its dv/dt rating supports robust operation in inductive switching environments such as solenoid drivers and relay replacements.

The PG-SOT223 package features Pin 4 as the exposed drain pad for thermal conduction, and its dynamic parameters-including Q_g = 4.3–6.4 nC, t_d(on) = 4–6 ns, and C_iss = 80–140 pF-support high-frequency switching up to several hundred kHz in space-constrained power stages.

Key Specifications

Pinout & Package

PG-SOT223 package with 4 terminals: Pins 1–3 are Gate, Drain, Source respectively; Pin 4 is the exposed drain pad (electrically connected to Pin 2), providing enhanced thermal dissipation and requiring solder connection to PCB copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with STP04N60M2 and DMN3025LSD-13, BSP89 E6327 uniquely balances 240 V capability, logic-level drive, dv/dt ruggedness, and AEC-Q101 compliance - making it optimal for 12–24 V automotive and industrial high-side switching where reliability under electrical stress is critical.

Availability

BSP89 E6327 is available at Aetrix Electronics and suitable for automotive lighting control, industrial solenoid actuation, low-power DC-DC converter high-side switching, and smart home relay replacement requiring stable component supply and long-term lifecycle support.

Supply support for BSP89 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

BSP89 belongs to Infineon's SIPMOS small-signal transistor product line, engineered for logic-compatible, high-reliability switching in automotive body electronics and industrial control applications where dv/dt immunity and AEC-Q101 validation are mandatory.

FAQ

Is BSP89 E6327 suitable for high-side switching with 3.3 V microcontroller drive?

Yes. With V_GS(th) ranging from 0.8 V to 1.8 V and full enhancement at V_GS ≥ 4.5 V, the BSP89 E6327 achieves R_DS(on) ≤ 7.5 Ω even at 4.5 V gate drive. This allows direct interface with 3.3 V MCUs when paired with appropriate gate pull-up or buffer, though 5 V drive yields optimal on-resistance.

What is the role of Pin 4 in the PG-SOT223 package?

Pin 4 is the exposed drain pad, electrically connected to Pin 2 (Drain). It serves exclusively as a thermal interface - not a signal terminal - and must be soldered to ≥6 cm² of PCB copper to achieve the specified R_thJA = 70 K/W. Omitting this connection degrades thermal performance and risks thermal runaway under sustained load.

Does BSP89 E6327 require an external flyback diode when driving inductive loads?

No. The integrated body diode has V_SD = 0.85–1.2 V and t_rr = 67–100 ns, enabling safe freewheeling in solenoid and relay applications. However, for high-di/dt or high-energy inductive loads, an external Schottky diode may still be added to reduce voltage overshoot and improve efficiency.

How does AEC-Q101 qualification impact BSP89 E6327's use in industrial designs?

AEC-Q101 qualification subjects the device to accelerated stress tests including HTGB, HTRB, and ESD (HBM >250 V), ensuring robustness beyond standard industrial temperature and reliability requirements. While not mandatory for industrial use, it provides proven margin for extended lifetime, thermal cycling, and electrical overstress in harsh environments.