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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSR606NH6327XTSA1

Name: BSR606NH6327XTSA1
Brand: Infineon Technologies
SKU: BSR606NH6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSR606NH6327XTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSR606NH6327XTSA1.pdf

Description:: MOSFET N-CH 60V 2.3A SC59

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Product details

Overview

BSR606NH6327XTSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level MOSFET in PG-SC59 (SOT-23) package, rated for 60 V V_DS, 2.3 A continuous drain current at 25 °C, and 90 mΩ R_DS(on) at V_GS = 4.5 V. It is AEC-Q101 qualified, avalanche-rated, and used in automotive body electronics, LED drivers, and load switching circuits requiring robust transient immunity.

For engineers reviewing the BSR606NH6327XTSA1 datasheet, BSR606NH6327XTSA1 pinout, BSR606NH6327XTSA1 application, or BSR606NH6327XTSA1 equivalent, key selection criteria include logic-level gate drive compatibility (4.5 V), low R_DS(on) at 4.5 V, AEC-Q101 qualification, and integrated avalanche energy rating (20 mJ).

Technical Context

This OptiMOS™-3 device uses trench-gate silicon technology optimized for low gate charge (Q_g = 3.7–5.6 nC) and fast switching (t_r = 2.6 ns, t_f = 2.1 ns), enabling high-efficiency DC-DC conversion and PWM-controlled loads. Its V_GS(th) range (1.3–2.3 V) ensures reliable turn-on with standard logic outputs.

The integrated body diode features low forward voltage (V_SD = 0.83–1.15 V at I_F = 2.3 A) and fast recovery (t_rr = 22 ns, Q_rr = 11 nC), supporting synchronous rectification and flyback snubbing in compact power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	60 V - supports 48 V automotive systems with margin for transients
R_DS(on) @ 4.5 V	90 mΩ - enables efficient switching at logic-level gate drive
I_D cont @ 25 °C	2.3 A - suitable for medium-current load switching (e.g., solenoids, LEDs)
E_AS	20 mJ - withstands single-pulse inductive energy without failure
Q_g total	3.7–5.6 nC - reduces gate driver power loss and speeds up switching
t_rr	22 ns - minimizes reverse recovery losses in freewheeling paths
V_GS(th)	1.3–2.3 V - ensures turn-on with 3.3 V or 5 V microcontroller GPIO
T_j range	−55 to +150 °C - meets extended temperature requirements for under-hood automotive use

Pinout & Package

BSR606NH6327XTSA1 is housed in a PG-SC59 (SOT-23) surface-mount package with 3 terminals: Drain (pin 2), Gate (pin 1), Source (pin 3). The package has a minimal footprint (40 mm² FR4 PCB reference) and supports reflow soldering at 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Accepts logic-level voltage (≥4.5 V) to fully enhance channel; low C_iss (494–657 pF) eases driving
Pin 2 (Drain)	High-side or low-side switch node	Rated for 60 V blocking; handles pulsed currents up to 9.1 A
Pin 3 (Source)	Reference return path	Connected to ground or load return; forms common node with internal body diode cathode

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive applications including engine control modules and lighting ECUs
Logic-level gate drive	Guaranteed R_DS(on) ≤ 90 mΩ at V_GS = 4.5 V - eliminates need for gate boosters
Avalanche energy rating	20 mJ single-pulse E_AS - protects against inductive kickback in relay/solenoid drivers
Halogen-free & RoHS	Compliant with EU Directive 2011/65/EU and JESD22-A114 HBM Class 0 (<250 V)
Fast body diode	t_rr = 22 ns, Q_rr = 11 nC - reduces switching loss in bidirectional current paths

Applications

Automotive LED Headlamp Driver

Body Control Module Load Switch

Use Scenario: PWM dimming of high-brightness LED arrays in adaptive front-lighting systems.

IC Role / Device Role / Timing Role: Low-side switching element controlling LED current path with precise duty-cycle modulation.

Use Value: 90 mΩ R_DS(on) at 4.5 V enables direct MCU GPIO drive and minimizes conduction loss at 2 A load current.

Use Scenario: Power distribution to door lock actuators, window lift motors, and mirror heaters.

IC Role / Device Role / Timing Role: Protected high-side or low-side load switch with integrated avalanche ruggedness.

Use Value: 20 mJ E_AS rating prevents failure during inductive load turn-off transients in 12 V vehicle networks.

USB-C Power Delivery Load Switch

Industrial Sensor Interface Protection

Use Scenario: Inrush current limiting and fault isolation in USB-C PD sink ports.

IC Role / Device Role / Timing Role: Hot-swap MOSFET with controlled turn-on via gate resistor network.

Use Value: Low Q_g (3.7–5.6 nC) allows fast, soft-start switching without excessive gate drive power.

Use Scenario: Overvoltage and reverse-polarity protection for analog sensor inputs (e.g., pressure, temp).

IC Role / Device Role / Timing Role: Reverse-connected protection switch in series with signal path.

Use Value: −55 to +150 °C operating range and 60 V V_DS support harsh industrial environments and wide supply margins.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 80 mΩ @ 4.5 V; lower V_DS (20 V); SOT-23 package	Not suitable for 48 V systems; limited to low-voltage consumer electronics	Select only if V_DS < 25 V and lower on-resistance is critical
IPB070N10N3 G	R_DS(on) = 7.0 mΩ @ 10 V; TO-263 package; not logic-level (V_GS(th) = 2.2–3.3 V)	Requires gate driver for full enhancement; higher power handling but larger footprint	Choose for high-current (>10 A), non-logic-level designs where thermal mass matters

Compared with DMN2004LK-7 and IPB070N10N3 G, BSR606NH6327XTSA1 uniquely balances 60 V rating, true logic-level operation, AEC-Q101 compliance, and SOT-23 scalability-making it optimal for space-constrained automotive and industrial load switches.

Availability

BSR606NH6327XTSA1 is available at Aetrix Electronics and suitable for automotive lighting control, body electronics load switching, and industrial sensor interface protection requiring stable component supply across production lifecycles.

Supply support for BSR606NH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.

The OptiMOS™-3 product line delivers high-performance, logic-level N-channel MOSFETs optimized for efficiency-critical 12 V and 48 V automotive subsystems and compact industrial power stages.

FAQ

Is BSR606NH6327XTSA1 suitable for hot-swap applications?

Yes. Its 20 mJ avalanche energy rating, low gate charge (3.7–5.6 nC), and 60 V V_DS enable controlled inrush limiting and fault isolation in 12 V and 48 V hot-swap circuits. The device supports soft-start via external gate resistor and withstands repetitive transient overloads typical in pluggable modules.

What is the maximum PCB trace width needed for 2.3 A continuous current?

For 2.3 A continuous current at 25 °C ambient, a 1 mm wide, 70 µm thick copper trace on both sides of a 40 mm² FR4 PCB meets thermal limits per Infineon's minimal footprint reference. Derating applies above 70 °C ambient; at 100 °C, derated I_D is ~1.4 A.

Does BSR606NH6327XTSA1 have a built-in ESD protection diode?

No. It carries JESD22-A114 HBM Class 0 (<250 V) rating, indicating no integrated ESD protection diode. External TVS or RC filtering is recommended for gate protection in noisy environments such as automotive CAN/LIN nodes or industrial I/O interfaces.

Can this MOSFET replace BSS138 in existing designs?

Only with validation. BSR606NH6327XTSA1 offers higher V_DS (60 V vs. 50 V), higher I_D (2.3 A vs. 0.22 A), and lower R_DS(on) at 4.5 V (90 mΩ vs. 3.5 Ω), but its larger gate capacitance (C_iss ≈ 600 pF vs. 30 pF) may slow switching in high-frequency digital logic applications originally designed for BSS138.

BSR606NH6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 15µA

Gate Charge (Qg) (Max) @ Vgs:: 5.6 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 657 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SC59-3

BSR606NH6327XTSA1 FAQ

1.How can I place an order for BSR606NH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSR606NH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSR606NH6327XTSA1 reliable?

The price and inventory of BSR606NH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSR606NH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BSR606NH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSR606NH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSR606NH6327XTSA1?

BSR606NH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSR606NH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSR606NH6327XTSA1?

For technical support, including BSR606NH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSR606NH6327XTSA1 requirements.

6.How does Aetrix verify that BSR606NH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BSR606NH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSR606NH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BSR606NH6327XTSA1?

All BSR606NH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSR606NH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSR606NH6327XTSA1 part is unused and in its original packaging.

Return procedure for BSR606NH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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