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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS119E6327

Name: BSS119E6327
Brand: Infineon Technologies
SKU: BSS119E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS119E6327

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS119E6327.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS119E6327 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET with 100 V V_DS, 6 Ω R_DS(on) at V_GS = 10 V and I_D = 0.17 A, dv/dt rated to 6 kV/µs, and housed in PG-SOT23 package - used for low-power switching in LED drivers, load switches, and level-shifted gate control circuits.

For engineers reviewing the BSS119E6327 datasheet, BSS119E6327 pinout, BSS119E6327 application, or BSS119E6327 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.3–2.3 V), robust dv/dt immunity, low gate charge (Q_g = 1.67–2.5 nC), and thermal performance under ambient-limited PCB layouts.

Technical Context

This MOSFET operates in enhancement mode with a threshold voltage range of 1.3–2.3 V, enabling direct interface with 3.3 V and 5 V logic without gate boosting. Its dv/dt rating of 6 kV/µs ensures reliable operation in inductive switching environments where voltage transients occur.

Dynamic parameters include C_iss = 60–78 pF, C_oss = 8.6–11.2 pF, and Q_gd = 0.76–1.1 nC, supporting fast switching with controlled EMI and low Miller-induced turn-off delay. The integrated body diode has t_rr = 21.7–32.5 ns and Q_rr = 10–15 nC, suitable for non-synchronous flyback and clamp applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC with margin for transient spikes in industrial and automotive auxiliary supplies.
R_DS(on) @ V_GS = 10 V	3.4–6 Ω - determines conduction loss at 0.17 A; enables <100 mW dissipation in compact SOT23 footprints.
V_GS(th)	1.3–2.3 V - ensures full enhancement with standard 3.3 V microcontroller GPIO, eliminating need for level shifters.
Q_g	1.67–2.5 nC - defines gate drive energy requirement; compatible with low-current drivers in space-constrained designs.
dv/dt Rating	6 kV/µs - suppresses false turn-on during high-slew-rate noise events in motor gate drivers or relay snubbers.
t_r/t_f	3.1–4.6 ns / 27–40 ns - sets minimum PWM frequency capability (~10 MHz max practical) and switching loss profile.
P_tot @ T_A = 25°C	0.36 W - limits usable continuous current to ~0.13 A on minimal copper; requires thermal derating above 70°C ambient.

Pinout & Package

Package: PG-SOT23 (JEDEC TO-236AB), surface-mount, lead-free, tape-and-reel (3000 pcs/reel). Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives logic-level voltage; high-impedance input requiring <100 nA leakage; sensitive to ESD.
Pin 2 (Source)	Reference node for gate drive and current return	Common connection point for gate driver ground and load return; must be low-inductance in switching paths.
Pin 3 (Drain)	High-side or low-side power switch terminal	Carries switched load current; connects to inductive or capacitive loads; exposed drain pad improves thermal path in some variants.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.3 V enables direct MCU GPIO control without external level-shifting circuitry.
dv/dt ruggedness	Rated 6 kV/µs prevents spurious turn-on during fast voltage transients in relay drivers or solenoid controls.
Low gate charge	Q_g ≤ 2.5 nC reduces switching losses and allows use with low-power gate drivers in battery-powered systems.
Integrated body diode	Fast recovery (t_rr ≤ 32.5 ns) and low V_SD (≤ 1.2 V) support freewheeling in non-synchronous DC-DC topologies.
Thermal robustness	R_thJA = 350 K/W allows operation up to +150°C junction temperature with proper PCB copper area.

Applications

LED Constant-Current Driver

Microcontroller Load Switch

Use Scenario: Driving 1–3 white LEDs from 5–24 V supply using PWM dimming and current regulation via sense resistor feedback.

IC Role / Device Role / Timing Role: Low-side switch controlling LED cathode path; modulated at 1–20 kHz to avoid audible noise.

Use Value: Logic-level gate ensures full enhancement at 3.3 V MCU output; low R_DS(on) minimizes heat rise in sealed enclosures.

Use Scenario: Enabling/disabling peripheral modules (e.g., sensors, radios) in portable IoT devices to reduce standby current.

IC Role / Device Role / Timing Role: High-side or low-side power switch activated by GPIO; operated in static ON/OFF states with infrequent transitions.

Use Value: Ultra-low I_DSS (<0.5 µA at 100 V) prevents leakage-induced battery drain over months of sleep mode.

Inductive Load Snubber

Level-Shifted Gate Driver Stage

Use Scenario: Clamping voltage spikes from relays, solenoids, or small DC motors in industrial control panels.

IC Role / Device Role / Timing Role: Fast-switching clamp device placed across coil; triggered only during turn-off transients.

Use Value: 6 kV/µs dv/dt rating and fast t_rr ensure reliable clamping without oscillation or latch-up.

Use Scenario: Level-shifting 3.3 V logic signals to drive higher-voltage MOSFET gates (e.g., 12–24 V half-bridge stages).

IC Role / Device Role / Timing Role: Small-signal buffer stage providing isolation and voltage translation between controller and power stage.

Use Value: Low C_iss (≤78 pF) and fast t_d(on) (≤4 ns) preserve signal integrity and timing margins in multi-stage drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 3.5 Ω @ V_GS = 4.5 V; lower V_GS(th) (0.5–1.2 V); higher C_iss (105 pF)	Better for 3.3 V-only drive but more susceptible to noise-induced turn-on	Prefer when gate drive is strictly 3.3 V and layout lacks noise filtering.
BSS123	V_DS = 100 V; R_DS(on) = 6 Ω @ V_GS = 10 V; no dv/dt rating specified; higher I_DSS (1 µA)	Lacks documented dv/dt immunity; less suitable for inductive snubbing	Select only for static switching where transient immunity is not required.

Compared with DMN2004LK-7 and BSS123, BSS119E6327 uniquely combines verified 6 kV/µs dv/dt ruggedness, tight V_GS(th) distribution, and low Q_g, making it optimal for noisy industrial switching where reliability trumps marginal R_DS(on) reduction.

Availability

BSS119E6327 is available at Aetrix Electronics and suitable for LED drivers, microcontroller load switching, inductive snubbing, and level-shifted gate driver stages requiring stable component supply and long-term industrial availability.

Supply support for BSS119E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial MOSFETs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

The SIPMOS™ small-signal transistor product line targets high-reliability, low-power switching applications demanding precise threshold control, dv/dt immunity, and robust thermal behavior in compact packages.

FAQ

Is BSS119E6327 suitable for 3.3 V microcontroller GPIO drive without a level shifter?

Yes. With a guaranteed V_GS(th) of 1.3–2.3 V and full enhancement at V_GS = 4.5 V, the BSS119E6327 delivers R_DS(on) ≤ 10 Ω at 3.3 V drive, supporting up to 0.1 A continuous current in thermally optimized layouts. Its low gate leakage (<100 nA) also preserves GPIO drive strength.

What is the maximum safe operating voltage for continuous DC operation?

The absolute maximum V_DS is 100 V, but for reliable long-term operation at T_j ≤ 150°C, continuous DC voltage should be limited to ≤80 V to maintain sufficient margin against transients and ensure R_DS(on) stability across temperature. Derating is required above 70°C ambient per the P_tot(T_A) curve.

Does BSS119E6327 have a qualified automotive grade variant?

No. The BSS119E6327 is rated for industrial temperature range (−55°C to +150°C) and complies with JEDEC standards, but it is not AEC-Q101 qualified. For automotive applications, Infineon offers the BSS119RL variant (AEC-Q101 qualified, same electrical specs, identical PG-SOT23 package).

Can the body diode be used for reverse polarity protection?

No. The integrated body diode conducts forward from source to drain (anode = source, cathode = drain), so it cannot block reverse input voltage. For reverse polarity protection, the device must be placed in series with the positive rail in low-side configuration - but dedicated protection MOSFETs with back-to-back topology or discrete diodes are preferred for this function.

BSS119E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 78 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS119E6327 FAQ

1.How can I place an order for BSS119E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS119E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS119E6327 reliable?

The price and inventory of BSS119E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS119E6327 is usually 5 days.

3.What payment methods are accepted for BSS119E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS119E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS119E6327?

BSS119E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS119E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS119E6327?

For technical support, including BSS119E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS119E6327 requirements.

6.How does Aetrix verify that BSS119E6327 is sourced from the original manufacturer or authorized distributors?

All BSS119E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS119E6327 meets industry standards.

7.What is the process for return or replacement of BSS119E6327?

All BSS119E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS119E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS119E6327 part is unused and in its original packaging.

Return procedure for BSS119E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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