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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS119 E6433

Name: BSS119 E6433
Brand: Infineon Technologies
SKU: BSS119 E6433
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS119 E6433

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS119 E6433.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS119 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET with 100 V V_DS, 3.4 Ω R_DS(on) at V_GS = 10 V and I_D = 0.17 A, 6 kV/µs dv/dt rating, and PG-SOT23 package - used in low-power load switching, LED drivers, and level-shifted gate control circuits.

For engineers reviewing the BSS119 datasheet, BSS119 pinout, BSS119 application, or BSS119 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.3–2.3 V), low R_DS(on) at 4.5 V, reverse diode recovery time (t_rr = 21.7–32.5 ns), and thermal resistance (R_thJS = 350 K/W).

Technical Context

This device operates as a single N-channel power switch optimized for low-voltage gate drive (≤5 V) and fast switching in space-constrained applications. Its dv/dt immunity (6 kV/µs) enables robust operation in noisy environments without spurious turn-on.

The integrated body diode exhibits t_rr ≤ 32.5 ns and Q_rr ≤ 15 nC at 50 V reverse voltage and 100 A/µs di/dt, supporting efficient flyback and snubberless inductive load control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports DC bus voltages up to 80 V with margin for transients
R_DS(on) @ V_GS = 10 V	3.4 Ω max - enables <170 mW conduction loss at 0.17 A continuous drain current
V_GS(th)	1.3–2.3 V - ensures reliable turn-on with 3.3 V or 5 V logic-level microcontroller outputs
t_rr	21.7–32.5 ns - minimizes switching losses and voltage overshoot in inductive switching
dv/dt rating	6 kV/µs - prevents false triggering in high-noise motor or relay drive circuits
P_tot @ T_A = 25°C	0.36 W - defines maximum dissipation with minimal PCB copper area (no heatsink required)
C_iss	60–78 pF - determines gate drive strength requirement for <5 ns rise/fall times

Pinout & Package

Package: PG-SOT23 (JEDEC TO-236AB), surface-mount, Pb-free, tape-and-reel (3000 pcs/reel). Marking: sSH.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts logic-level voltage (≥3.4 V plateau) to fully enhance channel; requires <0.12 nC total gate charge
2 (Source)	Reference node	Common return path for load current and gate drive reference; tied to system ground in low-side configuration
3 (Drain)	Power output	Switches 100 V-rated loads; connects to positive rail in high-side configurations with level-shifting support

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.3 V ensures full enhancement with standard 3.3 V/5 V GPIO without external level shifters
dv/dt rated	6 kV/µs immunity eliminates need for gate resistors or RC snubbers in relay/motor driver noise environments
Fast reverse recovery	t_rr ≤ 32.5 ns and Q_rr ≤ 15 nC reduce switching losses and EMI in inductive load commutation
Low gate charge	Q_g ≤ 2.5 nC enables clean 4 ns rise time with 6 Ω gate resistor and 5 V drive

Applications

LED Driver Switching

Low-Voltage Load Control

Use Scenario: Driving 24 V LED strings in automotive interior lighting with PWM dimming at 1–20 kHz.

IC Role / Device Role / Timing Role: Low-side switching MOSFET controlled by MCU GPIO; handles 0.17 A continuous current with <100 ns switching transitions.

Use Value: Logic-level compatibility eliminates level shifter; low R_DS(on) keeps junction temperature rise below 40 K at 0.17 A.

Use Scenario: Enabling/disabling 12 V sensor modules in industrial IoT nodes using battery-backed MCU sleep/wake cycles.

IC Role / Device Role / Timing Role: Power switch placed between supply rail and sensor VCC; activated only during measurement bursts.

Use Value: Sub-µA IDSS (<0.1 µA at 25°C) prevents standby current leakage; SOT23 footprint saves board space.

Level-Shifted Gate Driver

Relay Coil Driver

Use Scenario: Level-shifting 3.3 V microcontroller signals to drive high-side NMOS switches in half-bridge power stages.

IC Role / Device Role / Timing Role: Source-follower configured as active level shifter; provides 10 V gate drive referenced to floating high-side source.

Use Value: V_GS(th) tolerance and 100 V V_DS allow safe operation across bootstrap voltage swings up to 80 V.

Use Scenario: Driving 24 V/40 mA relay coils in programmable logic controllers with opto-isolated MCU outputs.

IC Role / Device Role / Timing Role: Low-side switch absorbing coil energy via integrated body diode during deactivation.

Use Value: Fast t_rr (≤32.5 ns) and low Q_rr (<15 nC) suppress voltage spikes >60 V, eliminating external flyback diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 3.5 Ω @ 4.5 V (vs. 4.9 Ω typ for BSS119); higher C_iss (100 pF)	Slightly faster switching but higher gate drive demand; same SOT23-3 package	Prefer when lower on-resistance at 4.5 V is critical and gate drive strength allows extra capacitance
FDV303N	V_GS(th) = 1.0–2.0 V (tighter range); R_DS(on) = 3.1 Ω @ 4.5 V; no dv/dt rating specified	Lacks documented dv/dt immunity; suitable only in low-noise environments	Choose where cost sensitivity outweighs noise immunity requirements and tighter threshold is beneficial

Compared with DMN2004LK-7 and FDV303N, the BSS119 uniquely combines verified 6 kV/µs dv/dt immunity, guaranteed 100 V breakdown, and tight V_GS(th) distribution - making it preferred for industrial relay and motor-control interfaces where noise resilience is non-negotiable.

Availability

BSS119 is available at Aetrix Electronics and suitable for LED drivers, relay coil control, level-shifted gate driving, and low-power load switching requiring stable component supply and long-term industrial availability.

Supply support for BSS119 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The SIPMOS™ small-signal transistor product line delivers logic-compatible, high-reliability MOSFETs for space-constrained, noise-immune switching in automotive body electronics and industrial automation.

FAQ

Is BSS119 suitable for 3.3 V microcontroller GPIO direct drive?

Yes. With V_GS(th) ranging from 1.3 V to 2.3 V and R_DS(on) = 4.9 Ω max at V_GS = 4.5 V, the BSS119 fully enhances using standard 3.3 V logic outputs. Its low gate charge (Q_g ≤ 2.5 nC) ensures fast switching without excessive drive current demand.

Does BSS119 have a qualified dv/dt rating, and how is it tested?

Yes. The BSS119 is explicitly rated for 6 kV/µs dv/dt under conditions of I_S = 0.17 A, V_DS = 80 V, di/dt = 200 A/µs, and T_jmax = 150°C. This rating is validated per Infineon's internal stress test methodology and guarantees immunity to false turn-on in high-di/dt environments like relay or solenoid switching.

Can BSS119 replace BSS138 in existing designs?

No - not directly. While both are SOT23 N-MOSFETs, the BSS138 has V_DS = 50 V and R_DS(on) = 5 Ω @ 10 V, whereas the BSS119 offers 100 V rating and lower R_DS(on) (3.4 Ω @ 10 V). Substitution requires verification of voltage margin, thermal limits, and gate drive compatibility due to differing V_GS(th) distributions.

What is the maximum continuous drain current at 70°C ambient?

The maximum continuous drain current is derated to 0.13 A at T_A = 70°C, as specified in the Absolute Maximum Ratings table. This reflects thermal limitation of the PG-SOT23 package (R_thJA ≈ 350 K/W), not device degradation - operation remains within safe SOA limits when PCB layout provides adequate copper area.

BSS119 E6433 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 78 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS119 E6433 FAQ

1.How can I place an order for BSS119 E6433 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS119 E6433 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS119 E6433 reliable?

The price and inventory of BSS119 E6433 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS119 E6433 is usually 5 days.

3.What payment methods are accepted for BSS119 E6433?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS119 E6433 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS119 E6433?

BSS119 E6433 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS119 E6433 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS119 E6433?

For technical support, including BSS119 E6433 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS119 E6433 requirements.

6.How does Aetrix verify that BSS119 E6433 is sourced from the original manufacturer or authorized distributors?

All BSS119 E6433 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS119 E6433 meets industry standards.

7.What is the process for return or replacement of BSS119 E6433?

All BSS119 E6433 units undergo pre-shipment inspection (PSI). If there is an issue with BSS119 E6433, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS119 E6433 part is unused and in its original packaging.

Return procedure for BSS119 E6433:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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